欧姆的

On the other hand, lowest attenuation for an air filled line was around 93 Ohms.

另一方面，最低损耗的空气填充线的阻抗是93欧姆。

By using Transmission Line Model to investigate the ohmic contact of electrode metal and InP semiconductor. We got a low specific contact resistively of 2.24×10-5 Ω-cm2 of the AuBe/Cr/Au contact to p-InP.

我们用Transmission Line Model方式得到低的特徵接触电阻约2.24×10-5 Ω-cm2之AuBe/Cr/Au属和p-InP形成的欧姆接触。

Another approach in enhancing the light extraction efficiency of AlGaInP LED was accomplished using a surface roughening process. In this process, the Au(170 nm)/AuBe(260 nm)/Au(170 nm) ohmic contact layers were first deposited on the GaP window layer. After the alloy annealing process (480°C for 10 min), the Be atoms will diffuse into the GaP top layer and form non-uniform clusters. The LED samples were then immersed into a mixture 3H3PO4:1H2O2:1H2O solution for 6 min, resulting in a rough GaP surface. The luminous intensity of the AlGaInP LED can increase from 42 to 50 mcd, that is, an 18% enhancement can be achieved via the present non-photolithography surface roughening process.Keywords: LED, AlGaInP, Cu substrate, Reflector, Surface roughening

在实验的第二部份是开发磷化镓窗口层之粗化制程，我们是藉由正面金/铍欧姆接触电极之熔合制程，使铍扩散至磷化镓层，同时利用铍渗入磷化镓造成之特殊组成，可形成不均匀之蚀刻阻挡，而在磷化镓表面形成粗化，我们发现480℃、10分钟的熔合制程，加上浸泡磷化镓蚀刻溶液6分钟，可将四元发光二极体之发光亮度由42 mcd 提升到50 mcd，经由此无光罩粗化制程可将亮度提升18%，明显提升磷化铝铟镓发光二极体之外部量子效率。

The optimized device process of p-n Alo.85Gao.15As/GaAs solar cells have been investigated. AuBe/Au and AuGeNi/Au were evaporated and metallized to form ohmic contacts of front grids and back electrodes, respectively. Heavily-doped GaAs cap layers were removed by the NH4OH:H202:H3P04:H20 selective etching solution.

分别采用真空蒸发AuBe/Au和AuGeNi/Au并合金化形成欧姆接触制作太阳电池正面栅线和背面电极；采用NH_4OH：H_2O_2：H_3PO_4：H_2O体系的选择性腐蚀液去除高掺杂的GaAs接触层；采用真空蒸发技术制备ZnS/MgF_2双层复合减反射膜。

INDICATIONS: Not only does the HEM-780 automatic blood pressure monitor utilize Omron's patented IntelliSense technology, but it also features the innovative Comfit Cuff.

迹象：不仅某些事物-780自动血压计欧姆龙使用的智能感知专利技术而且特色的创新comfit袖。

Results for measurement of AC impedance spectroscopy showed that charge transfer resistance and electrode ohmic resistance for 〓 cathode were also the smallest.

阻抗谱结果表明：〓阴极的电荷传递电阻、电极欧姆电阻最小。

The ohmic resistance of insulation.

绝缘电阻绝缘的欧姆电阻。

Ohmic'.'' resistance and reactance, and usually represented in complex notation as Z= R+ iX, where R is the ''.'ohmic'.'' resistance and X is the reactance.

欧姆'。''电阻抗和电抗两部分组成，在复合的标记中通常表示为：z＝r＋ix，其中r是电阻抗，x是电抗

SiC Schottky diodes with ideality factor of 1.2～1.25 and ohmic contacts with specific resistance of (5～7)×10-3Ωcm2 were obtained below 100℃.

表面氢化处理的优点在于避免了欧姆接触

Various methods to reduce the heat effect of Ni/MH battery were summarized,such as decreasing ohmic resistance and charge polarization,increasing O_2 evolving over-potential,reducing O_2 recombination,heat dissipation and charge monitoring.

总结了各种降低MH/Ni电池热效应的方法，包括降低电池欧姆电阻、减小充电极化、提高氧气析出过电位、减少氧气复合以及散热和充电控制等。

The labia have now been sutured together almost completely.The drains and the Foley catheter come out at the top.

此刻阴唇已经几乎完全的缝在一起了，排除多余淤血体液的管子和Foley导管从顶端冒出来。

To get the business done, I suggest we split the difference in price.

为了做成这笔生意，我建议我们在价格上大家各让一半。