横向性的

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

This paper begins with the origin of the principle of relativity of contract, by putting forward the notion of the inviolability of creditor"s right try to justify the necessity and rationality of the system of infringement of the third person upon creditor"s right, and proposes the stand our nation should adopt, to realize the biggest function of that system.This paper is divided into four parts:Part I, principle of relativity of debt.

本文从契约的相对性原则的起源入手，试图以传统民法中的债的相对性原则为突破口，运用纵向发展与横向比较相结合的方法，通过论证债的不可侵性，证明第三人侵害债权制度存在的合理性和必要性，以及我国应采取的立场，让第三人侵害债权制度作为合同违约责任制度的辅助制度而发挥作用。

Starting from the study on 8 typical, open and sealed faults in Yanqi Basin, by using integral seismic-geologic methods, such as fault stress analytical method and fault smearing method, it is found out that the critical values of the fault as it is vertically and horizontally opened and sealed are 0.3333 MPa and 5 MPa respectively. It is pointed Out that because times and vertical and strike positions of the fault are different, the fault seal properties are different.

从焉耆盆地所开展的8条比较典型的开启或者封堵的断裂的研究入手，利用地震地质综合研究的方法―"断面应力分析法"和"断面物质涂抹法"，发现该盆地内的断裂在横向上和垂向上开启或者封堵时的"临界值"分别为0.3333和5 MPa，指出断裂的封堵性因其形成的时间、垂向上所在的部位和走向上所在的位置等方面的不同而不同。

The first is Qin culture's value in the market economy, from the perspective of modem mining, the essence of the inherent humanity, addressing its deep flaws and reshape its modem value, The second is Qin cultural circle and coordinated regional economic development, Qin cultural circles and the big-Guanzhong mark sphere has the inherent linds, Qin culture research should be based on reality, from the perpective of cultural capital build a solid foundation for culture; The third is Qin culture's industrialization, which has an advantage in location and resource advantages; The fourth is inter-regional cultural cooperation's issues, Qin cultural studies should be carried out in the wide-area, multi-perspective of a comprehensive study; The fifth is to introduce the new paradigm issues. such as cultural capital, social capital and human resources.

一是秦文化在市场经济中的价值挖掘与重塑问题，应从现代性角度挖掘秦文化的内在人文精髓，正视其深层中的秦文化圈与区域经济视域下的大关中经济圈具有内在契合性；秦文化的相关研究应该立足于大关中经济圈的现实，从文化资本角度为大关中经济的腾飞打造坚实的文化根基；三是秦文化自身的产业化问题，秦文化圈具有文化产业的区位优势和资源优势，应从经济与文化交叉的角度深入作域文化产业发展模式问题；四是区域间跨文化经济交流合作问题，秦文化研究应在跨省际、跨区域的横向文化交流合作中对其内在关系进行宽领域、多视角的全面研究；五是在研究中引人新范式问题，应有效借鉴文化资本、社会资本、人力资源、企业文化与企业家精神等一些新的分析范式，推动相关研究的深人拓展。

Be living in the deep well ultradeep well prospecting process ,Since radial direction force 、Eddy is stird 、Elements such as horizontal vibration and so on being ,In the wake of well drilling time the increase ,The auger post writings is used the casing inside wall crossrange strenuously to broaden ,It is more and more grave to cause casing and drilling rig to join the wornout problem .

论文摘要：在深井超深井勘探过程中，由于径向力、涡动、横向振动等因素的存在，随着钻井时间的增长，钻柱作用于套管内壁的侧向力增大，导致套管和钻具接头磨损的问题越来越严重。造成钻具耐磨带失效的主要原因有地层研磨性、钻杆的井下工况、耐磨材料选择与

We have no common name for a mime of Sophron or Xenarchus and a Socratic Conversation; and we should still be without one even if the imitation in the two instances were in trimeters or elegiacs or some other kind of verse--though it is the way with people to tack on 'poet' to the name of a metre, and talk of elegiac-poets and epic-poets, thinking that they call them poets not by reason of the imitative nature of their work, but indiscriminately by reason of the metre they write in.

索夫农 、森那库斯和苏格拉底式的对话采用的模仿没有一个公共的名称；三音步诗、挽歌体或其他类型的诗的模仿也没有——人们把&诗人&这一名词和格律名称结合到一起，称之为挽歌体诗人或者史诗诗人，他们被称为诗人，似乎只是因为遵守格律写作，而非他们作品的模仿本质。

The relationship between communicative competence and grammar teaching should be that of the ends and the means.

交际能力和语法的关系应该是目标与途径的关系。