栅

The front grille is now lower to the ground, and is the centerpiece of a very Mazda-esque front fascia.

的前格栅现在降低到地面，是一个非常核心的马自达风格前筋膜。

The MG6 is a crisply styled four door fastback with just a hint of Alfa 156 -- minus the iconic shield grille -- around the front end.

该MG6是清晰风格的四门快背只暗示阿尔法156 -减去标志盾牌格栅-在前端。

It can also be applied to different voltage range, if the subcircuit model uses different types of FET models.

同时，根据不同沟道区域的饱和原理，采用不同的模型与参数进行模拟，使子电路适用于不同栅压和漏压。

As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

接着我们把掺氮ZnO薄膜作为沟道层材料，用Si3N4做栅绝缘层在非晶玻璃上制备了ZnO基薄膜晶体管，ZnO-TFT器件表现出了典型的场效应晶体管的输出特性。

The degradation and breakdown of thin gate oxide film are related with the generation of traps in oxide layer.

摘 要：薄栅氧化层的退化、击穿与氧化层中和界面陷阱的产生相关。

A gate metal film is adjacent to a portion of transparent conductive film in the pixel area.

栅金属膜与在像素区中的一部分透明导电膜相邻。

Preparation and Structure of HfSixOy Thin Film for High K Gate Dielectrics.

高K栅介质HfSixOy薄膜的制备工艺与结构分析。

In such a semiconductor device, the diffusion layer of the first conductivity type is formed so as to be separated from the gate insulator film.

在这样的半导体器件中，一导电型的扩散层与栅绝缘膜分开形成。

The work done previously is experiential. To this day, the researches on silicon nitride thin film prepared by PECVD stay initial stages, so it is necessary to further develop PECVD. On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

前人做的工作大多也都是经验性的，至今人们对PECVD 氮化硅薄膜的研究还很不成熟，尚处于研究探索的阶段，从而在理论上有必要对PECVD 法氮化硅薄膜做进一步的研究；与此同时，制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管这一课题的需要。

Seventh: The sol-gel method developed here for the synthesis of nanocrystalline film gate are compatible with conventional silicon planar technology, and there is no any limitation to the polarity of the film type n or p for making different kinds of nanocrystalline-film-gate-OSFET sensor. This is a very important basic work for the extending, improving and integrating of the similar devices.

七、研究开发的制备氧化物及复合氧化物纳米晶薄膜的溶胶—凝胶工艺可以实现与硅平面工艺兼容，采用该工艺可以制作不同纳米薄膜栅的OSFET新型气敏元件，薄膜的导电类型不受限制，可以是N型的，也可以是P型半导体，为该种类器件的推广和改进以及进一步的集成化创造了基础。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。