权威

B : Well , if you ask me , it is pretty good .

嗯，如果你问我的话，我认为很不错。

It is found that , H+ penetrates through ZnS and reaches the interface between ZnS and HgCdTe by SIMS testing. It is analyzed that H+ passivates the interface, reduces the density of interface states and improves the performance of detector.

SIMS测试发现氢化过程中氢离子可以穿过ZnS层到达ZnS与碲镉汞的界面处，分析认为氢离子对界面态起到了钝化作用，降低了界面态密度，提高了器件的性能。