晶格

In the Raman spectrum, the main phonon modes will be changed due to different laser polarization.

在第三部份拉曼光谱中，可发现拉曼光谱会随著不同雷射极化方向的激发而产生晶格震动模式的改变。

A core structure of carbon fibres with ceramics lattice to provide rigidity, is covered with a layer of ceramics to prevent the carbon material from oxidising.

带有陶瓷碳纤维晶格结构的核心，提供的刚性，是与的陶瓷膜，防止氧化的碳材料。

It is interesting that there exit GeF_6~(2-) octahedra with high O_h symmetry.

其中晶格水的引入导致了GeF_6~(2-)八面体为O_h对称性；进而GeF_6和H_2O通过强烈的F…H-O氢键链接成-3D具有0。

It is widely accepted that the essential mechanism inthe manganese oxides is the double exchange and electric-phonon interaction,whichare intimately related to the lattice distortions of MnO6 octahedra.

目前国际公认此材料中最根本的物理机制是双交换和电-声子相互作用，它们和此材料中载流子的自旋和MnO6八面体的晶格畸变密切相关。

We present the idea of using a buffer layer of deviation from stoichiometry for materials growth on large lattice mismatch substrates. This idea was realized in nitrides growth in this thesis.

首次提出了采用偏离化学计量比的缓冲层在大晶格失配的衬底上生长单晶膜的思想，并在GaN外延生长上得以实现。

At some critical values of spin-phononinteraction and phonon frequency the long-range orderdisappears,and some kind of quantum spin liquid state willbe developed,which is favorable to the ground state energy.

亦即，由于晶格量子涨落的影响而使得系统的基态不能继续保持长程序，这在能量上对系统是有利的。

Much like human ascension, there is an ascension grid work that surrounds each stone.

就像人类提升，围绕着每块矿石也都有一个提升晶格层。

In this dissertation we used different kinds of design to do the experiments, and compared the experiment results with theoretical results. Finally, a 192μm thick PPLN crystal sandwiched between two CLN crystals gave a single (quasi-single) mode in the quasi-phase matched TPG process.

在论文中我们针对不同的设计，进行实验和理论的交互比对，并使用不同厚度的周期性晶格反转铌酸锂反覆试验，最后以190微米的厚度配合上述的第三个方法，达到接近单模输出的准相位匹配的兆赫波参数产生。

From the calculation results, we can see that charge and currentin the RLC circuits exhibit quantum fluctuations of zero point vibration at OK.

为此，我们根据固体理论，从电阻产生的物理机制即电子和晶格振动之间相互作用出发，对介观RLC电路进行了量子化处理。

However, because of the lattice mismatched and imperfect band structure, the application of Si〓Ge〓/Si heterojunction has been constrained. The incorporation of carbon into Si〓Ge〓 layer, provides an additional degree of freedom in Si-based band and strain engineering.

然而，通常外延生长的Si〓Ge〓/Si结构是一种晶格失配异质结，受到临界厚度的限制，而且也不具备理想的能带结构，限制了其进一步的应用。C掺入Si〓Ge〓合金，为Si基能带工程和应变剪裁提供了新的自由度。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。