晶格

The dependence of structural parameters including lattice constants, rhombohedral angle, and atomic coordinates on pressure was also studied.

对锗R8相结构参数的压力依赖性也进行了研究，包括晶格常数、伞状角、原子位置参数随压力的变化情况。

We comprehensively investigate and discuss the relation in the tetragonal,rhombohedral and coexistence phase region of PZT.

我们对PZT四方相区、三角相区和混合相区介电常数与晶格畸变的关系进行了全面研究和探讨。

It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.

众所周知，晶格失配和热应力失配是GaN异质外延中位错产生的主要原因；为此，我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试，其中尝试了侧向外延生长技术，得到了低位错密度（小于10〓/cm〓）、高质量的GaN外延层；尝试多低温缓冲层法，发现材料中的应力特性与生长系统和生长条件有关，材料中的应力与位错密度按相反方向变化；首次尝试高低温联合缓冲层法，材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大，从而导致随后高温GaN外延膜中位错密度降低，并且能够有效地抑制黄光峰。

Among the three selected inhibitors, T-225 takes the best effect that it is difficult to generate the calcium gels, DETPMP takes subordinately.

通过对EDTMP和DETPMP的残余浓度分析探明：阻垢剂不仅是吸附于碳酸钙表面上，更多的是在碳酸钙析出的过程掺杂于其晶格中。

The results of Knight shift and spin-lattice relaxation time (T1) provide us that there are no correlation between the density of states at Fermi level and the superconductive transition temperature of the studied material.

藉由奈特位移及自旋晶格松弛时间的量测结果，我们得知对於我们所研究材料的超导转变温度和费米面上的态密度无关。

Based on a thorough analysis of the experimental results, a coupling mechanism of the catalytic selective oxidation and non-catalytic partial oxidation in which the surface adsorbed 〓 species and the lattice 〓 species take part synergically.

在全面分析实验结果的基础上，提出了一个由表面吸附氧种〓和晶格氧种〓协同参与的甲烷催化选择氧化与气相非催化部分氧化相耦合的反应机理，催化剂的参与既在表面开辟了生成〓和HCHO的新途径，又可将气相反应中的强氧化型物种转移到催化剂表面，形成有利于选择氧化的表面活性氧种，同时避免了气相中强氧化型物种浓度过高而导致选择氧化产物深度氧化。

Through cyclic hydrogen bonding with motif formed by coordinated water molecules and coordinated hydroxyl groups of dhbd from adjacent tetranuclear units, these adjacent neighbors are connected to afford a 1D supramolecular chain along axis a, which is further extended via aromatic intercalations and other crystallization water molecules into a 3D structure with channels.

毗邻的四核单元通过配位H2O分子和配位羟基O原子形成的 R 22(8)型环形氢键桥的连接，沿a轴方向构建了四核单元交替相连的一维超分子链；链间籍苯环的π-π堆积作用和晶格水分子氢键链的连接进一步扩展为具有隧道的三维结构。

BR is embedded in the purple membrane and organized in trimeric unit arranged in a hexagonal twodimensional crystalline lattice, there are about 30 lipid molecules surrounding a BR trimer.

BR分子在紫膜中以三聚体的形式存在，并形成二维的六角型晶格，每个三聚体周围约有30个脂质分子。

I intend to uncast any machinery or patterning that is non-karmic and suspends my space between more than 25% between my ascension grid work and subtle bodies.

我意愿将我提升晶格层和精微体之间的间隔空间维系成超过25％的、性质为非业力的任何机械或模式全部扔掉。

The main reason is the uncommensurate contact between nanotube's crystal orientation and diamond's crystal orientation.

碳纳米管在金刚石基底以及氩基底上滑动滑动时，碳纳米管受到的摩擦力产生了明显的跃动现象，我们认为微观状态下，上、下表面间的晶格随着滑移而导致的相对位置变化是产生跃动现象的根本原因。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。