晶格

With the Eu doping level increased to more than 1mol%, the content of B-site occupancies is increased and acceptor doping is to be dominant.

当Eu含量低于1mol％时，Eu在PZT晶格中主要占A位，起施主掺杂作用；随着Eu含量的增加，其在PZT晶格中占据B位的比例逐渐增多，受主掺杂作用逐渐增强。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

The results of IR and XRD for ground cement components show that grinding aids accelerate breakage of chemical bonds especially of Si—O bond in C〓S mineral, enhance crystal lattice distortion, crystal defect and amorphism, thereby enhancing activity of ground materials.

助磨剂作用下磨细物料的XRD、IR分析结果表明：助磨剂加剧了物料的晶格畸变、晶格缺陷及无定形化，加速了物料结构中化学键的破坏，尤其是C〓S矿物中Si—O键的断裂，从而增加物料的反应活性。

The polarization goes up with the increasing of the long-range interaction, and the polarization of the center site in the lattice is larger than that of the corner site under the same condition.

随着长程相互作用的增强，铁电颗粒的极化强度增大，在相同的条件下，晶格中心点的极化强度总是大于晶格边上的格点的极化强度。

An amorphous-like and disordered ZnO with special structure of serious lattice defect and oxygen vacancies was formed after reduction under the reaction condition of CO〓+H〓 due to isomorphous substitution between copper and zinc in the catalyst.

由于催化剂中铜和锌之间的同晶取代现象，使得催化剂在还原和反应状态下形成具有严重晶格缺陷的类非晶态结构的ZnO微晶，并出现一些氧空穴。

It is proposed that the periodic lamella twins can be grown with the aid of this kind of twin structure and it can be applied to acoustic supper-lattice resonancer.

对孪晶形成的可能原因进行了分析，提出了利用该孪晶结构生长周期性聚片孪晶，并应用于声学超晶格谐振器的可能性。

All crystalline structrue has been investigated by XRD, on the basis of which the relationship between dopant dose and lattice constant and the size effect of phase transformation were discussed.

利用XRD研究了掺杂钛酸铅纳米晶的晶体结构，以此为基础讨论了掺杂量与晶格常数变化的关系以及相变的尺寸效应，并研究了掺杂纳米晶的相组成和晶胞参数。

The behaviour of oxygen in the reoxidation process was investigated by an oxygen coulometry.

结果表明；氧流量计在升温阶段检测到三个不同行为的吸氧峰，峰Ⅰ（起始温度-250℃）为氧空位的填充过程；峰Ⅱ（起始温度-800℃）和峰Ⅲ（起始温度-1250℃）为还原相的氧化过程，具体来说，峰Ⅱ是通过晶界扩散提供氧使靠近晶界附近的区域被氧化；而峰Ⅲ是由晶格扩散过程控制，氧化过程从晶界逐渐向晶粒内部区域扩展，并伴随着富Ti的Ba6Ti17O40相的沉淀。

At the same time,a tension stress is applied on theγ′phase interfaces along the direction parallel to the stress axis,which results in the lattice expansion ofγ′phase to trap the Al,Ta atoms with the bigger radius.This brings out the accumulation of the solute atoms to form the N-type rafted structure.Al,Ta atoms with bigger radius diffuse to the {100} plane to form the linked bond of the heterogeneous atoms and the stable stacking mode,this is a main reason of promoting the transformation ofγ′phase into the N-type rafted structure.And the change of the strain energy density in different interfaces of the cubical-likeγ′phase is thought to be the driving force of the elements diffusion and theγ′phase directional growth during creep.

拉伸蠕变期间，类立方γ\'相中与施加应力轴垂直的界面受水平切应力，使晶格收缩可排斥较大半径的Al、Ta原子；与应力轴平行的界面受拉伸张应力，使晶格扩张可诱捕较大半径的Al、Ta原子，由此引起的原子偏聚形成γ\'相是自由能降低的过程；其中，较大半径的Al、Ta原子扩散迁移至{100}晶面，形成异类原子结合键及稳定的堆垛方式，是促使γ\'相形成N-型筏状结构的主要原因；而γ\'相不同界面的应变能密度变化是元素扩散及γ\'相定向粗化的驱动力。

The orientation tiltings were suggested to be one of the inportant mechanisms by which GaN films could match better with Al2O3(0001) substrates and relax the interfacial strain effectively.

GaN绕〈1120〉晶带轴倾斜的匹配方式是其外延生长过程中降低和Al2O3(0001)的晶格失配、释放界面应变的重要机制之一。标签 GaN Al2O3(0001)衬底 MOCVD 晶格匹配 GaN Al2O3(0001) substrate MOCVD lattice matching

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。