晶格

It turns out that such single-crystal ingots are no longer good enough for the job: they have too many" defects," dislocations in the atomic lattice that hamper the silicon's ability to conduct and otherwise cause trouble during chip manufacture.

然而这样一颗单晶棒已经不足以满足工作需求：它们有太多「陷」布在原子晶格之间，这会影响矽的导电能力，而且会在晶片制造过程中带来麻烦。

TiO2 is known to exist in three distinct structures: two tetragonal phase for anatase and rutile and a third orthornombic phase for brookite. Rutile has the most stable structure and physical and chemical properties. In rutile structure oxygen cavities move quickly so that rutile has better gas sensing respond and become a chief material use for oxygen gas sensors.

其中金红石结构是最为稳定的晶型，不但具有最为稳定的物理、化学性能，而且在金红石结构中，晶格中氧空位的迁移率较高，因而TiO_2金红石结构气敏响应效应较好，从而使金红石结构TiO_2氧化物材料成为氧敏传感器的首选材料之一。

In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies in the wafer.

在本工艺中，对晶片进行热处理以形成晶格空位，该空位在硅主体中形成。

The net stability and crystallization of the gel-glass was analyzed by energy of crystal lattice .

利用晶格能对凝胶玻璃的稳定性与析晶特性进行了定性分析。

It is shown that the strengthening mechanisms came from many aspects, including the tension and compression of crystal planes, the bending and distortion of crystal lattices, the increase of dislocation density, the formation of cellular dislocations, the transformation of part of the residual austenites.

以300M超高强度钢为例，运用多种测试手段，如TEM、SEM、XRD以及金相分析技术，发现强化层组织中晶面的拉伸和压缩，晶格的弯曲和歪扭，位错密度的增高，胞状位错的形成，部分残余奥氏体向形变马氏体的转变等现象，在综合分析的基础上指出，位错强化是抗疲劳增寿的主要因素。

A new hexagonal approximant has been found in Al-Cr-Si alloys and its axial lattice parameter follows a τ''s power series τ=(1 √5/2 is the golden number relationship, implying that they are all decagonal approximants. A rule of the icosahedral chains in them has been found.

在Al-Cr-Si合金中发现一种新的六角近似相，它与几个结构已知的六角相的晶格常量呈黄金数τ=(1 √5/2的幂级数关系，说明它们都是十重准晶的近似相，并找出其中二十面体链的规律。

In the surface of the substrate the liquid crystal molecules parallel to the surface as a consequence of the surface potential. Adopting the Lebwohl Lasher model, the mole cular centers of mass are located at the sites of the simple cubic lattice with period boundary conditions.

在基板表面处，液晶薄层受到表面作用势的作用使液晶分子沿面平行排列，采用Lebwohl Lasher模型，将分子质心固定在简单立方晶格的格点上，并对此格点模型赋以周期性边界条件，然后将简立方格点模型分为平行于基板的20个分子薄层，得到各薄层的指向矢分布的数值结果。

The element Sb exists in many forms in the film: transpositional atoms and compounds such as Sb2O3, Zn7Sb2O14 etc. ZnO crysal grains grow in mixing directions. The lattice relaxation and content of second phases increase when more Sb is doped. The UVA absorption of doped ZnO thin film obviously increases. The ultraviolet absorption peak narrows, the absorption intensity increases, the absorption margin becomes steep and moves to shorter wavelength about 5 nm, and the visible absorption increases in some sort.

薄膜中Sb以多种形态存在：替位原子和化合物(Sb2O3、Zn7Sb2O14)等，ZnO呈混晶方式生长；随着Sb含量的增加，其引起的晶格畸变和次晶相的含量逐渐增加；掺杂薄膜在远紫外波段的吸收显著增强，UV吸收峰变窄，强度增大，吸收边变得陡峭且向短波方向移动达5nm，在Vis波段的吸收有所增强。

The plastic deformation which is caused by the enrichment of edge dislocation with the same symbol, the incline crystal boundary which occurs when edge dislocation arranges vertically and the dissymmetry incline crystal boundary which is born of the distortion of crystal lattice are the three kinds of possible mechanism by which the graphite gets more crooked as nitrogen adds.

同号刃型位错群聚产生的范性变形，同号刃型位错垂直排列所产生的倾侧晶界，以及因晶格畸变而产生的非对称倾斜晶界是氮使石墨弯曲程度增大的三种可能机制。

Both interfinge distances were measured to be 0.23nm, corresponding to the lattice space of the {111} plane.

测量上述两种晶格条纹，发现其晶面间距均为0.23nm，与铂{111}面的晶面间距数据相符。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。