晶格

In this paper,we calculate the electronic structures of the different concentration'phosphorus-d oped diamond and the density of states of phosphorus-doped diamond films which have a vacant lattice site by the first principle method.

为了更好的理解磷掺杂金刚石薄膜的成键机理，不同磷掺杂浓度对金刚石晶格的完整性及其电导率的影响，本文通过第一性原理的方法计算了不同磷掺杂浓度的金刚石晶格的电子结构和引进空位后磷掺杂金刚石薄膜的态密度。

However, because S is more easily combined with Fe than As does, hence when hydrothermal fluids are rich in S, the possibility of As presence in pyrite crystal lattice decreased, but the chance for Co and Ni to substitute Fe in pyrite crystal lattice increased, thus S rich is not favorable for the formation of P type of pyrite.

但另一方面，由于S与As相比更易与Fe结合，因而成矿介质中富S将使As进入黄铁矿晶格中的能力或几率降低，并进一步使Co、Ni因补偿类质同像进入黄铁矿晶格中代替Fe的能力或几率增大，反而不利于形成P型黄铁矿。

High temperature is favorable to the formation of low valence state-As minerals and to the addition of As into pyrite crystal lattice, thus is favorable for the formation of P type of pyrite. However, at low temperature, high valence As minerals are easily formed and this case is not suitable for As to add into the pyrite crystal lattice to substitute S, thus the low temperature is beneficial to the formation of N type of pyrite.

As在白然界中的赋存状态与温度的关系表明：高温有利于形成低价态的As矿物，也有利于As呈低价态进入黄铁矿晶格中替代S而形成P型导电；低温则有利于形成高价态As的独立矿物，不利于As呈低价态进入黄铁矿晶格中替代S。，因而有利于形成N型导电。

The dependence of the frequency range on structural paramerter (crystal lattice shape, the ratio of the rod radius and the lattice constant) and electromagnetic parameter (the dielectric constants of the rods and of the background, incident electromagnetic waves with different polarization) were investigated.

同时，分析了AANR频率范围随着结构参量(晶格类型、介质棒半径与晶格周期的比值)和电磁参量(介质柱介电常量、本底介电常量、入射电磁波偏振方向)变化的行为。

We can use the defect in the photonic crystal to guide the electromagnetic wave, and this photonic crystal with defect can be used to make photonic crystal devices.

在前人研究的基础上，我们对二维正方晶格和六方晶格光子晶体缺陷的带结构进行了计算。

It was found that the oxidation extent of TiN film enhanced with the heat treatment temperature increased. The concentration of N decreased but the concentration of O increased when the temperature increase. O atoms entered the TiN crystal lattice and fcc TiN_xO_y structure with smaller lattice constant appeared.

研究结果表明，随着热处理温度的升高，TiN薄膜的氧化程度逐渐增大，热处理后生成的薄膜中N的含量逐渐减少，O的含量逐渐升高。O掺入到TiN的晶格结构中，生成晶格常数较小的TiO_xN_y面心立方结构。

In chapter 7 the photoassociation process inside an optical lattice is investigated. A scheme of controling the atom-molecule transformation process by sweeping the Raman laser frequency is proposed. With this scheme, the atom-molecule superposition state and coherent molecular output can be obtained.

在第七章，我们会考察光学晶格上的光子离解过程，并提出利用激光扫频的方法对光学晶格上的原子一分子相互转换过程进行控制，以得到稳定的原子一分子叠加态并实现分子相干输出的方案。

Dien = diethylenetriamine: Thecoordination sphere of copper in the complex is distorted square-based pyramidalgeometry with 〓 chromophores.

两种构型的titb配体同时与〓单元配位，在晶格Ⅲ平面形成了一种72元心形环。72元心形环在晶格Ⅲ平面无限扩展，形成由72元心形环稠合而成的平面网状结构。

Compared with the bulk Ba8Ga12Zn2Ge32 material prepared by melting method combined with SPS (MM+SPS sample), the bulk Ba8Ga12Zn2Ge32 material obtained by melting method combined with MS and SPS (MM+MS+SPS sample) has higher carrier concentration and lower carrier mobility at room temperature.

与熔融+SPS工艺制备的试样相比，熔融+MS+SPS制备的Ba8Ga12Zn2Ge32笼合物室温载流子浓度增加而迁移率降低，在测试温度范围内，试样的电导率略有下降，Seebeck系数增加，热导率和晶格热导率显著降低，900K时其晶格热导率从1.06W/mK降低至0.42 W/mK。

The vibrational spectra of CBO CLBO and LBO were compared, and the effect of cation on the vibrational spectra was discussed. In addition, the relationship between the LO-TO splittings and their nonlinear optical efficiency was analyzed simply.

比较了CBO，CLBO和LBO晶体的晶格振动光谱，讨论了阳离子对振动谱线的影响；分析了晶格振动模横纵频率的分裂程度与晶体非线性光学系数之间的关系。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。