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With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业,不在行,求高手帮忙。谢谢!具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

More defects forming in the growth plate during deposition almost attribute to the lattice constant relaxation, which makes its lattice constant get larger. However, self-annealing of diamond thick films for long time in the process of deposition makes their lattice constant in their interior and nucleation plate approach its natural value.

化学气相沉积金刚石初期生长的晶体存在大量的空位等缺陷,晶格松弛,在金刚石膜持续生长过程中,形核面和膜内部在高温下发生长时间的自退火,缺陷浓度下降,晶格松弛现象消除,晶格常数变小并趋于理论值。

The fracture mechanism of totally austenite TWIP steel (steel 5#) is: the moving of dislocations is blocked by twin boundary during deformation. Micro-voids nucleate at boundary of deformation twins by the interaction between deformation twins and dislocations. Micro-voids are formation, growth, coalescence and break by the stress concentration during deformation.

全奥氏体的TWIP钢(如5#钢)的断裂机制为:形变过程中位错的运动受孪晶界的阻碍,形变孪晶与位错的交互作用使微孔形核于孪晶界处,应力集中使微孔长大、聚合直至材料发生断裂。

The fracture mechanism of the whole austenite TWIP steel (steel 5#) was that the moving of dislocations was blocked by twin boundary during deformation, the microvoids nucleated at boundary of deformed twins by the interaction between deformed twins and dislocations, the microvoids grew, got together and broke by the stress concentration during deformation.

全奥氏体的TWIP钢(2#钢)的断裂机制为:形变过程中位错的运动受孪晶界的阻碍,形变孪晶与位错的交互作用使微孔形核于孪晶界处,应力集中使微孔长大、聚合直至材料发生断裂。

Li reduces the surface tension of aluminum luquid obviously, increases the ratio and rate of heterogeneous nucleation, which is the necessary condition of the formation of fine grains. However, a large amount of unmelted Al3Sc, Al3Zr TiAl3 particles dispersively distribute in the luquid metal along the edge of the molten pool, which is the sufficient condition of the formation of fine grains.

Li显著地降低了铝液表面张力,大大提高了异质形核率和形核速率,是细晶层产生的必要条件;而熔池边缘液态金属中弥散均匀分布大量未熔化的Al_3Sc、Al_3Zr和TiAl_3质点,则是细晶层产生的充分条件。

SEM and TEM observations indicate that the prior austenite deformation not only refines the allotriomorphic ferrite grain but also promotes the nucleation of intragranular ferrite, both of which in turn contribute to the refinement of granular bainite cluster including its ferrite platelets and MA islands.

SEM和TEM观察表明,奥氏体形变不仅细化仿晶界型铁素体,而且促进先共析铁素体在原奥氏体晶内形核,从而有利于细化粒状贝氏体晶团及其内部的铁素体片条和MA岛。

Based on the research on the solidifiation of twin-roll casting strip,the analytical model and emulational model of nucleation,the growth of dendrity tip and colunar dendrity transformation to equiaxis dendrityof twin-roll casting strip solidification are established by means of the principle of metal solidification and modern computer emulational technology.

在研究双辊薄带连铸工艺凝固过程的基础上,运用金属凝固的基本原理,并用现代计算机仿真技术建立了双辊连铸薄带凝固的形核、枝晶尖端的生长动力学、柱状晶向等轴晶生长的转变的解析模型及仿真模型,为双辊连铸薄带凝固组织形成的仿真模拟奠定了基础。

The results show that the microstructure of the cladding wire by drawing at room temperature is vimineous grain as fibril shape from prime equiaxed grain. The fibril diameter is in inverse proportion to deformation and the fibril length is in direct proportion to the square of deformation approximately. The ultimate tensile strength of the cladding wire by drawing at room temperature goes up in direct proportion to square root of deformation, whereas the elongation decreases and fluctuates.

结果表明:显微组织自原始的等轴晶变为细长条纤维状,纤维直径与形变量近似地成反比,纤维长度与形变量的平方近似地成正比;经室温拉变形的铜包铝线的极限抗拉强度随形变量增大而增大,与形变量平方根呈直线关系;延伸率随形变量增大逐渐降低,但延伸率波动较大。

That if the process can produce much liquid phase during the sintering, and which can become into completely-crystal needle-shap or aborization or bar-shap calcium ferrite instead of glass in the cooling process; if the magnetite is interweaved by the caking into the melting corrosion structure, the granular structure or the eutectic structure instead of exiling in the massive isolation; if the mount of the poreis is little, and uniformitly distributing; if the grain is little; if the organizational structure is symmetrical, all of which can improve the quality of the sintering.

另外还归纳出有利于强度提高的工艺参数和操作制度。分析工业试验和水钢现行生产的矿物组成、结构表明,水钢烧结矿以他形晶磁铁矿为主,铁酸钙为主要的粘结相,多形成熔蚀结构、粒状结构和共晶结构,强度较高;而在台车边缘和表层,由于存在较严重边缘效应和点火温度较低,使该区域的烧结矿组织结构疏松,局部呈蜂窝状或薄壁大孔状,铁酸钙较少而硅酸二钙和玻璃质较多,形成骸晶状结构和磁铁矿连晶,强度较低,致使返矿升高。

The analysis of polymer structure indicates that the non-crystalline phase is the majority of the agglomerate structure and the crystalline phase is the minority, the highest crystal value only reaches the level of 0.1646;There is a definite interactionadditives and PVA, which not only reduces the crystal value of ASPE to make amorphous areas enlarge but also improve the ability of segmental motion by destroying the well-regulated and orderly character of polymer chain, meanwhile restricts the mobility of potassium cation and enhances the anionic transference number of hydroxide ions, all these improve the ionic conductivity;The ionic conductivity occurs essentially within the amorphous phase of the ASPE;The structure of ASPE doesnt change in the range of our test temperature, this means, the temperature only takes effect on degradation of complex in certain compositions, ionic mobility and segmental motions of the polymer chain.

聚合物结构分析表明:碱性固体聚合物电解质中凝聚态结构以非晶态为主,仅有少量的晶态,结晶度最大为0.1646;添加的各组分与PVA之间都有一定的相互作用,这种作用不仅破坏了聚合物链段的规整性,能够降低聚合物的结晶度,增大无定形区域,提高链段运动的能力,同时这种作用限制K~+离子的运动,提高OH~-的迁移率,从而提高离子电导率;碱性聚合物电解质的离子传导主要发生在无定形区;在本实验测试离子电导率温度范围内,聚合物内部的结构不会发生变化,即温度只会影响电解质内部络合物解离程度和载流子迁移以及聚合物链段运动的情况。

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