晶体管

This is good for many years before the motherboard power supply, it is by changing the transistors to achieve the degree of conduction of the transistors of a variable resistor, series circuit in the power supply.

这是好多年以前的主板供电方式，它是通过改变晶体管的导通程度来实现的，晶体管相当于一个可变电阻，串接在供电回路中。

Because the upper transistor is an emitter follower (gain =~1); and the lower transistor is a variable resistor.

其增益大约为1，这大约为1的增益，不是晶体管放大所得，而是晶体管等效为电阻的结果。

Anisotropically etched insulative sidewall spacers are formed over opposing sidewalls of individual of said transistor gate lines within the peripheral circuitry area prior to forming anisotropically etched insulative sidewall spacers over opposing sidewalls of individual of said transistor gate lines within the memory array area.

在所述存储器阵列区域内的所述晶体管栅极线中的个别者的相对侧壁上形成各向异性蚀刻的绝缘侧壁隔离物(40)之前，在所述外围电路区域内的所述晶体管栅极线中的个别者的相对侧壁上形成各向异性蚀刻的绝缘侧壁隔离物(34)。

On the silicon substrate an epitomical layer is made,where IC components are formed subsequently.In an CVDprocess,the silicon substrates places in a vacuum crystal tube are first heated to 1,600°C by high-frequency radio power and then H⒉Cl⒉Si and certain gaseous compounds of As or P is injected into the tube to make a deposit of several um on their surface.Ions of As or P are impurity deliberately added to the singl-crystalline silicon structure to supply electrons that transmit "negative"current in the silicon crystals,which is called n-type silicon.Bcan be added as impurity to produce p-type silicon that supplies holes for transmitting "positive"current.Whether a p--type of an n-type silicon substrate is needed depends on what type of transistors is expected to be manufactured on it:n-p-n type of p-n-p type

对硅衬底上的一个epitomical层了，而IC零件形成subsequently.in一个CVD法（化学气相depsition ）过程中，硅衬底的地方在真空晶体管均先加热至1600 ° C时，由高频率的无线电功率，并然后h ⒉氯⒉硅和某些气态的化合物，砷或P ，是注入试管，使存款的几位嗯对他们surface.ions的作为或P是杂质刻意添加到单结晶硅的结构，以供应电子传递的&负面&目前，在硅晶体，即所谓N型silicon.b ，可以增加一条，作为杂质产生的p型硅供应孔转递&积极& current.whether一个P -类型的一个n型硅衬底，是需要靠哪些类型的晶体管预计将在制造上它： NPN型的PNP型

To the liquid-crystal display from its structure, the principle as well as the classification has carried on the introduction, twists to the row (TN-Twisted Nematic); Ultra distortion to row (STN-Super TN); Double-decked ultra distortion to row (DSTN-Dual Scan Tortuosity Nomograph); The thin film crystal (TFT-Thin Film Transistor), introduced the thin film crystal liquid-crystal display with emphasis.

对液晶显示器从其结构，原理以及分类进行了介绍，扭曲向列型(TN-Twisted Nematic)；超扭曲向列型(STN-Super TN)；双层超扭曲向列型(DSTN-Dual Scan Tortuosity Nomograph)；薄膜晶体管型(TFT-Thin Film Transistor)，重点介绍了薄膜晶体管型液晶显示器。

A predriver stage of the power amplifier circuit comprises first and second transistors in a push-pull configuration.

功率放大器电路的预激励级（30）由取推挽结构的第一晶体管（Q5）和第二晶体管（Q7）组成。

However, since the capacitor forces an ac ground at the emitter of the output transistor, the capacitor charging currents are proportional to the antilog of the voltage at the base of the output transistor.

然而，由于电容器部队在一个输出晶体管发射极交流接地，电容器的充电电流在输出晶体管的基成正比的电压反对数。

In one embodiment, a memory device comprises a first memory cell and a second memory cell, wherein the first memory cell comprises a first transistor coupled to a bit line and the second memory cell comprises a second transistor coupled to a bit line bar.

在一实施例中，一种存储装置包含一第一存储单元及一第二存储单元，其中该第一存储单元包含一耦接至一位线的第一晶体管，而该第二存储单元包含一耦接至一位线棒的第二晶体管。

The thin film transistor may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer.

本发明公开了一种薄膜晶体管及其制造方法，该薄膜晶体管可以包括沟道层、源电极、漏电极、保护层、栅电极、和/或栅极绝缘层。

In 1989, we familiar to ear 80486 chipses be released by the INTEL, the great place of this kind of chip lies in the boundary that it broke 1,000,000 transistors actually, integrating 1,200,000 transistors.80486 clock frequencies raise a 33 MHzs, 50 MHzs gradually from the 25 MHzs.80486 is 80386 help processor with mathematics,80387 and 1 high speed of 8 KBses saves an integration slowly in a chip, and in the 80 X86 the serieses for the very first time adopted a RISC technique, can carry out an instruction in a clock period.

1989年，我们大家耳熟能详的80486芯片由INTEL推出，这种芯片的伟大之处就在于它实破了100万个晶体管的界限，集成了120万个晶体管。80486的时钟频率从25MHz逐步提高到33MHz、50MHz.80486是将80386和数学协处理器80387以及一个8KB的高速缓存集成在一个芯片内，并且在80X86系列中首次采用了RISC技术，可以在一个时钟周期内执行一条指令。

By using competitive adsorption of activated carbom to remove unfavorable influence of carbon in carbonaceous gold concentrate on leaching process, the leaching rate of gold concentrate can be improved to 88% as compared with 10%by direct cyanidation.

本文论述了利用活性炭竞争吸附作用，消除含炭金精矿中炭在浸出过程中的影响，使金精矿的浸出率可由直接氰化的10％提高到88％。

The only thing you're ever gonna be king of is King of the Stupids!

你只配做傻瓜的国王！