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晶体管

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Preliminary experimental results of a phototransistor fabricated on an unusual high-purity FZ silicon substrate have been obtained.

报道了以区熔单晶硅为衬底的光晶体管的实验结果。

The paper presents a new kind of optical bistability consisting of an Avalanche Heterojunction Phototransistor and a semiconductor laser diode, four operating modes of this AHPT-LD-BOD system are also discussed when it works in the stable state.

本文研究了一种用雪崩异质结光晶体管和半导体激光器组成的新型光学双稳器件,讨论了在稳态工作时该双稳器件的四种工作模式。

The results showed that CTR degradation and noise increase were due to the increase of Si-SiO2 interface defects at the collector junction and emit junction in phototransistor.

结果表明CTR退化和噪声增加都归因于辐射后光敏晶体管集电结和发射结处Si-SiO2界面缺陷增多。

Optics ; bistability ; digitaloptical computing ; phototransistor ; optical logic gate.

光学;双稳态;数字光计算;光晶体管;光逻辑门

Since the float-zone silicon has lower contaminations and longer minority carrier lifetime than those in Czochralski Silicon and other semiconductor material, it has potential advantages to fabricate phototransistor on high-purity FZ silicon substrate to achieve a high gain at ultra low signal levels.

区熔单晶硅与直拉单晶硅以及其他半导体材料相比杂质含量少,少子寿命长,所以以区熔单晶硅为衬底制作的光晶体管在弱的光信号下仍然有高的增益,适宜于弱光探测。

The TOSHIBA PM7346-BI consists of a silicone phototransistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage AC: 5kVRMS

1第1页,本页显示记录1-14,共14条记录分1页显示东芝PM7346 - BI的由一个硅光光学耦合到一个砷化镓红外发光晶体管在4铅塑料DIP(DIP4)与具有高隔离电压(交流二极管:5kVRMS)。

The research status and recent development of electrical, optical and photoconduction properties of Ge nanowires , as well as the application of Ge nanowires in field effect transistors were analyzed in detail.

重点分析讨论了锗纳米线在电学、光学、光电导等特性及其在场效应晶体管制造方面的研究应用现状与最新进展。

It is not enough to just depend on the advancement of the technology to reduce energy consumption of microprocessors.

工艺水平的改进使得大量的晶体管集成在一个芯片上,能量密度越来越大。

Moreover, miniaturisation is not straightforward, not least because lasers cannot be made as small as transistors.

此外,小型化的困难尤其体现于激光器无法做得像晶体管一样小。

It is therefore the purpose of this paper to offer a detailed analysis on the frequency stability of transistor feedback oscillators.

本文将对晶体管反馈振荡器的频率稳定性能作比较详细的研讨。

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