晶体管

Transistors control the power needs of the motors which in turn ring a set of children's handbells based upon your key presses.

晶体管控制的电力需求的发动机，从而环的儿童的手铃根据您的设置按键的。

Intel researchers have developed transistors so small that about 30 million of them could fit on the head of a pin.

现在的晶体管已经如此之小，一个针头上就能放下大约3000万个。

Its possible causes are: the transistor operating point is not the choice of a good, high-voltage filter capacitor leakage or damage, leakage heat regulator diode, rectifier diode damage.

其可能原因有：晶体管工作点未选择好，高压滤波电容漏电或损坏，稳压二极管发热漏电，整流二极管损坏等。

The design of high-voltage transistor directly determines the performance of chips.

高压晶体管设计的好坏将直接影响芯片性能的优劣。

Last week, a small maker of diodes and transistors called Sino-Tech International Holdings Ltd.

的小型二极管和晶体管生产商让投资者大吃一惊。

In this paper, we mainly introduce the growth methods of single crystals, various techniques for device fabrication, mobilities of these devices and influence factors. In addition, the prospect and problems of organic single-crystal transistors are discussed.

本文主要介绍了有机单晶的生长方法、有机场效应器件的各种制备技术、器件的迁移率及其影响因素，并对有机单晶场效应晶体管的发展前景和面临的一些问题作了简要的讨论。

Variations among the pixels may result from different electron mobilities and/or threshold voltages of transistors included in the pixels.

像素之间的差异可由包括在像素中的晶体管的电子迁移率和/或阈值电压的不同而引起。

The compounds, when used as the semiconductor layer in organic thin-film transistors exhibit device characteristics, like charge-carrier mobilities and current on/off ratios, that are comparable to those of pentacene.

这类化合物，当在有机薄膜晶体管中用作半导体层时显示出可与并五苯器件特性相比的器件特性，如电荷载体流动性和电流开/关比。

See also Nozaki et al.,"A 1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application," IEEE Journal of Solid-State Circuits, Vol. 26, No. 4, April 1991, pp. 497-501, which describes a similar element in a split-gate configuration where a doped polysilicon gate extends over a portion of the memory element channel to form a separate select transistor.

还参见Nozaki等人的&A1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application&(IEEE Journal of Solid-State Circuits，第26卷，第4期，1991年4月，497-501页)，其描述了处于分裂栅极配置中的类似元件，其中掺杂的多晶硅栅极在存储器元件沟道的一部分上延伸以形成单独的选择晶体管。

A novel composite-channel Al x Ga1- x N/Al y Ga1- y N/GaN high electron mobility transistor has designed and optimized.

对新型复合沟道Al x Ga1- x N/Al y Ga1- y N/GaN高电子迁移率晶体管进行了优化设计。

I can not make it blossom and suits me

我不能让树为我开花

When temperatures are above approximately 80 °C discolouration of the raceways or rolling elements is a frequent feature.

当温度高于 80 °C 左右时，滚道或滚动元件褪色是很常见的特征。