晶体管

The design scheme considers the circuit structure in transistor level by using the principle of adiabatic computing, which can effectively avoid the inevitable problems of metastability and asynchronism signals treatments in FIFO based on conventional complementary metal oxide semiconductor logic. A 16-depth adiabatic FIFO based on CTGAL was achieved.

该方案运用绝热计算原理，基于晶体管级设计电路，有效避免了传统CMOS逻辑的FIFO必然遇到的亚稳态和异步信号处理等难题，实现了深度为16的基于CTGAL电路的绝热FIFO结构。

In semiconductor technology the manufacture of transistors and integrated circuits,involving microcircuit patterns on a silicon wafer,is required.

半导体技术的晶体管和集成电路制造、晶圆的模式包括微电路，是必要的。

At that time we were talking about five micron transistors and a hundred to two, three hundred gates.

在那个时候我们谈论5微米晶体管和100两个， 300门。

Of transistors.The chips enabled engineers to miniaturize the circuits contained in all electronic devices.

这些芯片有指甲般大小能容纳数百个晶体管使的工程技术人员能够将所有电子装置含有的电路微型化。

This will make the evergy loss decrease to a minimum value by almost 70%.

在数字化管理系统中，晶体管的电源管理几乎是沿着准确的有效输出曲线工作的，使之热耗降至最低，减少了近70%的热损耗。

Summary This paper analyzes the working principle and stability of a transistor mul- tivibrator operating as a frequency divider,with both sides being synchronized by the input signal.It is found that the frequency division stability of this circuit can further be increased when the multivibrator operates in the second class of oscillating condition,and that the optimum operating point is best determined from the actual base voltage changing characteristic.

本文分析了晶体管自激多谐振荡器用作双侧同步分频电路的一般理论和分频稳定性，并考虑基极电压变化规律来确定最佳分频的工作状态和运用点，同时对同步脉冲的引入问题亦作了原理性补充，还提出了振荡于第二类状态下的自激多谐振荡器可获得高稳定性的分频，以及此类双侧同步分频电路的设计方法。

A level of musicality that I've never heard from a solid state amp befo-re....

我从来没听过晶体管机有这样的音乐性。

This amp combines the details of solid state with the musicality of tubes... o-r that could just be my source, I'm not sure at this point.

这个放大器结合了晶体管机的细节还原力与胆机的音乐性，可能这是源于我的信号源，这是我不能确定的。

The nanotube transistors exhibited n-type semiconductor characteristics, and the conductance of nanotube FETs can be modulated by more than 4 orders of magatitude at room temperature.

显示了纳米器件实际应用的可能性。7利用单根CNx／C纳米管作为半导体材料制备了n型的场效应晶体管，器件的电子密度在105～106 cm-1之间，亚阀值斜率为300-800mV／decode之间，开关比约为10000。

The circuits, including 4 value TTL, NOR gate and NAND gate and AND OR NOT gate and five state gate, are designed by use of bipolar transistors. They have good I/O characteristics, great load capacity and robust noise immunity, and their noise margin may reach±0.6V.

采用双极型晶体管设计出了四值TTL"或非"门、"与非"门和"与或非"门电路及五态门，这些电路均具有较好的输入输出特性、较强的负载能力和抗干扰能力，噪声容限可达到± 0 。6V。

This paper discusses design and realizable methods of remote test output interface from logical design angle.

本文从逻辑设计的角度讨论遥测输出接口的设计及实现方法。

This also 星体投射plies to buildings, structures and geological features.

这也适用于建筑物和地质特征。