晶体管

At present transistor characteristic Picture device(JT-1 type)are maden wid-euse of measuring it's characteristic and parameter. But it needs user's transfer-ing and Calculating that measures triode direct current amplification factor β=It is not easy.

目前测试晶体管特性和参数，大都采用JT—1晶体管特性图示仪，它测试三极管参数直流放大系数β=，需要人工变换与计算。

And then the measures to improve the low temperature current gain of PET are brought out.

从解析和数值角度分析和讨论了影响多晶硅发射极晶体管低温电流增益及其温度关系的各主要因素并提出了改善多晶硅发射极晶体管低温电流增益的思路。

Each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation.

每个晶体管是独立安装，容易配置，在双晶体管或级联操作被保险。

Figure 1-14 shows an NPN transistor and a PNP transistor in the feedback path to provide dual polarity operation.

图1-14示出反馈通路采用一个NPN晶体管和一个PNP晶体管来实现双极性工作。

The edge-crowding-effect of emitter current in a transistor caused by self-bias of base resistor is one of the factors to limit its capability of loaded current.

由基区电阻的自偏压引起的晶体管发射极电流集边效应，是限制晶体管承载电流能力的因素之一［1-4］。

It is found that the utilization of BAlq3/Alq3 isotype heterostructure emitter further reduces the leakage current, leading the BAlq3/Alq3 isotype heterostructure-based devices to higher output current and higher common-emitter gain at the same operational voltage compared to the case of Alq3 as the emitter.

研究发现，同Alq3单发射极层结构的金属基极晶体管相比，BAlq3/Alq3异质结发射极层的使用进一步降低了器件的漏电流，使器件在相同的电压下表现了更高的输出电流和更高的共发射极增益，为进一步实现高性能金属基极晶体管提供了新的方法。

If you change the diode current by changing the resistance value of Rbias, then the transistor's emitter current will follow suit, because the emitter current is described by the same equation as the diode's, and both PN junctions experience the same voltage drop.

正因为发射极和二极管的电流用同一个方程描述，而且两个PN结共用同一个电压，每当你通过改变Rbias改变了晶体管电流，晶体管发射极电流也必将随之同样改变。

The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.

本发明涉及一种多晶硅作源端的具有垂直沟道结构的场效应晶体管，及它的制备方法。本发明的垂直沟道场效应晶体管，其特征在于用多晶硅作器件的源端。

The compensation circuit includes a compensation transistor of the same type as the field effect transistor.

所述补偿电路包括一个与场效应晶体管相同型号的补偿晶体管。

It is the base of hydrogen ion sensitive field effect transistor ,used fluoride sensitive membrane as ISFET gate.

它是在pH2ISFET传感器的基础上用PVC 方法把离子敏场效应晶体管和氟化物敏感膜相结合，制成氟离子敏场效应晶体管。

No clear conclusions can be made about the predictie alidity of specific measures, they found, except for criteria for the underuse of drugs for cardioascular disease.

除了心血管病不合理用药标准外，对于特定评价方法的预测效度没有明确的结论。

The third and last is that almost all of them, being infinite in number, have been impostures, and by idle and crafty brains merely contrived and feigned after the event past.

第三、即最后一点是：几乎所有这些不胜枚举的预言都是欺人之谈，都是在事件过后由无聊而狡猾的脑筋推测与凭空捏造的。