晶体管

On the other hand, the linear deviations of the active voltage biasing circuit with Bipolar Transistor or FET were at most 7%, and at most 3% respectively.

结果：在阳极电流为50 μA，电阻型光电倍增管偏置电路的线*偏离度已达40%，而用双极*晶体管或场效应晶体管的有源偏置电路的线*偏离度分别为≤7%，≤3%。

METHODS: On the basis of PMT passive voltage biasing circuit, Bipolar Transistor or Field Effect Transistor were used. Additionally,"adjustable constant current technology" was adopted to avoid the effect of temperature on circuit.

在电阻型光电路倍增管偏置电的基础上，增加双极型晶体管或场效应晶体管构成有源光电倍增管偏置电路；并采用可调恒流技术，以解决温度对电路的影响。

Just forty-five nanometers or forty five billionth of a meter.

晶体管是用来控制电流的，新一代的晶体管体积会更小。

A cable railway on a steep incline, especially such a railway with simultaneously ascending and descending cars counterbalancing one another.Each of these logic families, TTL, ECL, PMOS, NMOS and CMOS, has a specific set of characteristics that make it desirable for certain applications.

每一种逻辑元件，晶体管一晶体管逻辑电路、发射极耦合逻辑电路f 型金属氧化物半导体、n 型金属氧化物半导体和补充金属氧化物半导体，都有其特有的性质，从而适用于不同的用途。

The invention relates to an amplifier circuit containing a high-frequency transistor (1) and having a circuit (2) for adjusting the operating point, which provides a base current for the high-frequency transistor (1) according to the voltage released at a resistor (3) which is connected in the collector ring of the high-frequency transistor (1). The circuit (2) has a differentiating unit (20), fed by the supply voltage, which compares the voltage released at the resistor (3) with a reference voltage.

带有高频晶体管(1)的放大器电路具有一个用于工作点调整的电路(2)，其依赖于在连接在高频晶体管(1)的集电极电路中的电阻(3)上下降的电压为高频晶体管(1)提供基极电流，电路(2)具有一个由供电电压馈电的差分节(20)，其把在电阻(3)上下降的电压与基准电压比较。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

It consists of many ele- mentary pulse networks such as: Transistor forming and shaping circuit,trrnsistor blocking oscillator,multivibrator,time delay circuit and "and" gate,etc.

本文专门讨论了利用脉冲选择的晶体管化同步分频系统的线路综合原理和研制技术问题，对组成系统的各种单元脉冲电路，如晶体管窄脉冲形成器，晶体管间歇振荡器，晶体管多谐振荡器，晶体管延迟电路以及晶体管门电路等均作了较深入的分析，并给出相应的实验结果。

An analog control, in accordance with corresponding changes in the load modulation transistor gate of the base or bias, to achieve the output transistor switching power supply or transistor turn-on time of change in this way can the power supply output voltage in the workplace Conditions of constant change.

一种模拟控制方式，根据相应载荷的变化来调制晶体管栅极或基极的偏置，来实现开关稳压电源输出晶体管或晶体管导通时间的改变，这种方式能使电源的输出电压在工作条件变化时保持恒定。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

The same better common-base and common-emitter properties were observed. Basically, the all-organic metal-base transistors may also be seen as to be a permeable-base transistors, similar to the inorganic/organic hybrid transistors.

研究表明，全有机金属基极晶体管表现了和无机/有机混合型金属基极晶体管相似的特性，其从本质上说也是一种渗透型金属基极晶体管。

By the time of its fall, most of the prisoners were writers who had written against the corruptions of the government.

到它被攻陷的时候，里面多数的犯人是写了反对政府贪污文章的作家。

The most obvious variation to ovum morphological character was that the color was changed from light green to sepiaceous in embryonic development, and all the ovums were almost hatched after 96h.

在胚胎发育过程中卵的形态特征最明显的变化是颜色从淡绿到深褐色，卵在发育96h后卵基本全部孵化。