晶体

Even it seemed that such molecular compounds between an acid and a base were considered to easily crystallize by the formation of intermolecular hydrogen bondings or by the salt formation, the isolation of molecular crystals were not always successful.

虽然表面上看来，酸与碱很容易由于分子间的氢键作用或很容易由于盐的形成而得到双分子晶体，但是在实验过程中并不一定能够得到双分子晶体。

In addition, there are a large number of strong hydrogenbondings(N-H…O,O-H…O) and weak hydrogen bondings in involving the cations,perchlorate counter-ions,PNOS and water molecules, which result in formation 3-D networkstructure.

晶体中Ni与配体希夫碱中的N 、N(吡吡啶醛类过渡金属希夫碱配合物的合成、晶体结构及谱学表征啶)、O原子配位形成变形的八面体构型，由于分子间，存在大量的强氢键和弱氢键，这些氢键的交互作用使得该配合物形成二维网状结构。

As the young crystal bops around in the cloud, it passes through air pockets of varying temperatures.

初形成的晶体在云里四处碰撞，穿过不同Libbrecht说，当这些晶体遇到大约零下15度的空气团时，它们就会快速变化，伸长出六个臂状物。

From the microstruture observation, this dilatancy produced is clearly associated with a change from crystal plasticity plus minor cataclasis (formation of closed intragranular cracks) at high pressure (20MPa) to crystal plasticity plus significant cataclasis (involving axial cracking, intragranular cracking, crack opening and shearing) below 10MPa.

此时的微结构研究也发现：岩盐流变过程中膨胀的产生是由高围压下（20MPa左右）的晶体塑性加较少碎裂到低围压下（10MPa左右）的晶体塑性加主要的碎裂（包括纵向裂隙、晶内裂隙以及裂隙的张开与剪切）。

We have investigated effect of different amount of excessive Cd cations on growth of CMTC crystals.

研究了超化学计量比Cd离子对CMTC晶体生长的影响，发现晶体柱面与锥面所受的影响显著不同

Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.

电子学实验( S0704)(1，1)/应用电子学实验( S0472)(1，1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。

Two array fashions, hexagonal and square arrays of the colloids were observed by SEM images.

同时在所制备的胶体晶体中观察到了四方排列和六方排列两种排列方式，分析了这两种排列的转化主要是受温度和胶体晶体中缺陷的影响。

We note from the further studies that in the crystals, which sharing the similar crystal structures and coordinational environments, the magnitude of the Stokes shift of the luminescence of the dopant ion is in line with the average covalency of the replaced lattice site. This is because that the nature of Stokes shift is the energy transfer from the luminescent ion to the host lattice. The value of this energy is determined by the frequency of the host lattice in which the frequency is controlled by the chemical bond characters.

更深入的研究发现，在晶体结构和中心离子配位环境非常相似的系列晶体中，掺杂离子发射光的Stokes位移值与其所取代格位的平均共价性成正比的关系，这是由于Stokes位移的本质是发光离子在发光过程中向基质以光波辐射的形式传递能量，这一能量的大小是由基质的振动频率决定的，而基质的化学键性质恰恰决定着基质的振动频率。

If a crystal is grown very rapidly so that impurities, such as microorganisms, do not have time to be desorbed, they may be entrapped within the growing crystal. Recovery would be impossible with

如果晶体生成非常迅速，使得诸如微生物之类的杂质没有时间得到充分解吸附，微生物可能在生长的晶体中被捕获。

The excess nitrogen atoms in WNx films desorbs at temperatures below 766 ?aC. The excess nitrogen in WNx films can cause the effective work function lowering. Weak Fermi-level pinning effect is observed on HfO2 film. In this case, WNx/HfO2 gate stack can be applied to p-type fully-depletion SOI devices but WNx is not suitable to be meal gate of bulk p-type MOSFTEs.

氮化钨中过多的氮元素在温度低於766 oC便会析出，且过多的氮会导致氮化钨有效功函数下降，在氧化铪上会有轻微的费米栓效应，这种情形下，氮化钨可应用於p-型全空乏绝缘层上矽金氧半场效电晶体元件，但不适合当块材 p-型金氧半场效电晶体闸极。

However, as the name（read－only memory）implies, CD disks cannot be written onorchanged in any way.

然而，正如其名字所指出的那样，CD盘不能写，也不能用任何方式改变其内容。

Galvanizes steel pallet is mainly export which suits standard packing of European Union, the North America. galvanizes steel pallet is suitable to heavy rack. Pallet surface can design plate type, corrugated and the gap form, satisfies the different requirements.

镀锌钢托盘多用于出口，替代木托盘，免薰蒸，符合欧盟、北美各国对出口货物包装材料的法令要求；喷涂钢托盘适用于重载上货架之用，托盘表面根据需要制作成平板状、波纹状及间隔形式，满足不同的使用要求。