晶

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The resulting materials were characterized by x-ray diffraction, Fourier transform infrared spectroscopy, Nuclear magnetic resonance and Photoluminescence. Those spectra reveal that by adding SiO2 to YAG:Ce precursor, the lattice constant decreases while vacancies are generate due to the co-dopant ions (Si4+) replaces in the place of Al3+ sites of YAG:Ce system. YAG:Ce phosphors with Y3+ dodecahedral site replaced by Ce3+ and diffused effectively as an activator, as a result the photoluminescence intensity increased about ~20-30%.

研究成果显示，掺杂SiO2之YAG：Ce萤光粉经过高温热处理后，由X光绕射、红外线吸收光谱仪以及核磁共振可以得知，当SiO2添加量增加时，YAG：Ce晶格常数会因为Si4+取代Al3+的四面体晶格位置而变小，同时产生将YAG：Ce之铝离子空位缺陷，使活化中心更有效地在YAG：Ce主体中扩散取代Y3+的十二面体晶格位置，提高其发光性质约20~35%。

Volcanic rocks contain plenty of mantle-derived xenoliths, including spinel lherzolites with subordinate wehrlite, dunite, olivine websterite, clinopyroxenite and garnet lherzolite , and few olivine, clinopyroxene and spinel xenocrysts.

火山岩中含有的地幔捕虏体类型主要有：尖晶石二辉橄榄岩、石榴石二辉橄榄岩、纯橄岩、异剥橄榄岩和单斜辉石岩；捕虏晶主要有橄榄石、单斜辉石和尖晶石。

The evolution of strain energy with the aspect ratio (length/width) of the epitaxial structures was found to be affected by the height, the elastic constant of the substrates and the epilayers, and the symmetry of the lattice mismatch of these structures.

我们发现磊晶结构应变能随长宽比变化的方式将受到结构的高度、磊晶薄膜和基板的弹性系数、及晶格的对称性所影响。

The sloping plate can provide sufficiently the under-cooling for nucleation and lay a foundation for heterogeneous nucleation to form lots of nuclei of crystal internally and on the sloping plate surface, thus causing the melt to nucleates eruptively. Under the action of both metal flow and vibration, the nuclei formed on the sloping plate surface can move freely and disperse into the melt, and they are able to maintain the direct growth in spherical shape in the homogeneous composition and temperature fields.

倾斜板为形核提供足够大的过冷度和异质形核基础，大量晶核在斜板表面和内部形成，使熔体爆发形核，在流动和振动作用下斜板表面形成的晶核游离，弥散到熔体内部，晶核在均匀的成分场与温度场条件下，可以保持直接球状生长。

An explanation was made by considering the effect of interface energy on the eutectoid reaction.

将界面能引入纳米晶共析反应的自由能计算中，解释了纳米晶在平衡态时，单相区扩大的原因是界面能减小了共析分解的驱动力，并由此计算了Fe-Ni纳米晶中两相区的成分范围。

Block-copolyimide film from pPDA/ODA-PMDA was studied by TEM, SEM, PLM, ultra-deep three-dimensional microscope, TMA, and WAXD, which showed that the extensile strength and modulus of b-PI film were higher than that of irregular copolyimide film. It was also revealed that there was a large amount of crystallite formed in b-PI film, which was mainly attributed to its chain structure: rigid pPDA-PMDA chains were easy to form crystal nucleus because of phase separation, based on which semi-rigid PMDA-ODA molecular chains began to crystallize.

以pPDA／ODA-PMDA型嵌段共聚酰亚胺薄膜为对象，借助TEM、SEM、PLM、超景深三维显微镜、TMA、WAXD等手段，研究结果表明：b-PI薄膜的拉伸强度、弹性模量均高于无规共聚酰亚胺薄膜；b-PI薄膜中形成了大量的微晶，这是由于刚棒状的pPDA-PMDA分子链段因相分离容易形成晶核，然后半刚性的PMDA-ODA分子链段以PMDA-pPDA为晶核进行晶体生长造成的，而且ODA-PMDA分子链的结晶和酰亚胺化反应基本上是同步进行的。

Phase change memory with N-GST can realize three-state storage in one PCM cell by using the resistivity difference between the amorphous state, the face centered cubic phase and the hexagonal phase of GST.

利用N-GST薄膜的非晶态、晶态面心立方相和晶态六方相的电阻率差异，能够在同一存储单元中存储三个状态，实现相变存储器的多态存储功能。

The apatite with end-member cations, the apatite solid solutions [M-M1 AP] withdivalent cations substitution, the fluorapatite and the chlorapatite with end-memberations, the apatite solid solutions [Xi-X2 AP] with column-ions substitution were synthesizedthrough " solid-phase reaction method" in inert gas.

对不同Ca/P摩尔比HAP来说，在1.2≤R≤2.3范围内，随R值偏离正常配比程度的增大，其比表面积增大、晶粒尺寸ΓA，Γ(221，ΓR减小、晶形指数降低、结晶度减小、晶格缺陷度增大；当R=2.5时，晶粒尺寸和结晶度反而增大，出现反常，但晶格缺陷度却保持有规律增加。

Diopside crystals in fluosilicate glass-ceramics tend to lower thermal expansion coefficient, while richterite crystals in fluosilicate glass-ceramics tend to increase thermal expansion coefficient.The lowest thermal edpansion coefficient of K2O-MgO-SiO2-CaF2 fluosilicate glass-ceramics is 78.4×10-7(20-300℃), while the highest thermal expansion coefficient of this glass-ceramics is 85.6×

透辉石结晶相的含量增加使微晶玻璃的热膨胀系数降低，与此相反碱镁闪石结晶相的含量增加却使微晶玻璃的膨胀系数增加。K2O－MgO－SiO2－CaF2系统氟硅酸盐微晶玻璃的最小热膨胀系数为：78.4×10－7（20～300℃）；最大热膨胀系数为：85.6×10-7（20～300℃）。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。