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X-ray diffraction is one of the most common and efficient ways to measure a superlattice structure. This dissertation displays the detail results for characterization of Ge〓Si〓/Si superlattices by x-ray diffraction (including x-ray small angle diffraction and double crystal diffraction). It was found, when the growth temperature is lower, the intensities of xray small angle diffraction peaks are modulated by a periodical function, which indicates that both sets of interfaces of the superlattice is highly flat; when the growth temperature is higher, the diffraction peak intensities are simply decay with the increase of diffraction vector, which indicates that one set of interfaces is highly flat but another is not; when the growth temperature is very high, the diffraction peaks are reduced more rapidly, which indicates that both sets of interfaces are not ideal.

本文详细介绍了用X-射线衍射(包括X-射线小角衍射和双衍射)方法对Ge〓Si〓/Si超格结构特性测试的结果,尤其是发现,当Ge〓Si〓/Si超格的生长温度较低时,X-射线小角衍射谱峰的强度随着衍射波矢的增加而周期性调制,表明超格的两套界面都十分平整;当生长温度较高时,Ge〓Si〓Si超格的X-射线小角衍射谱峰的强度随着衍射波矢呈简单的衰减变化,对应于超格内有一套界面不平整的情况;当生长温度进一步提高时,X-射线小角衍射峰明显减少,表明超格内两套界面都不理想。

When TiO〓 content is increased, the surfacial energy formed by crystals may be reduced, the devitrification degree, strengthened and the content of wollastonite in crystal phase raised; if Cr〓O3〓 content is increased, the crystal size is enlarged, and the content of diopside in crystal phase, raised; if the sulphide content is increased; the reduction atmosphere is heightened and the content of wollastonite become bigger.

核剂浓度研究表明,核剂浓度不同,对基础玻璃析强度,相含量和体尺寸有一定的影响,当TiO〓含量增加时,可以降低体形成的表面能,析强度增大,相中硅灰石含量增多;Cr〓O〓含量增加,体尺寸增大,相中透辉石含量增加;硫化物增多,还原气氛增大,同时硅灰石含量增多。

The results show that the interplanar crystal spacing and lattice index of Al-rich α phase reduce gradually with increasing pressure. When the pressure reaches from common pressure to 5 GPa , Al-rich α phase lies on the (200) and (220) crystal faces, the interplanar crystal spacing are reduced by 1.07% and 1.15%. From common pressure to 3 GPa , the microstructure of ZA27 alloy changes from thick dendrites to fine dendrites, and finally to granular. According to the effect of solute diffusion coefficient under super high pressure and the calculation of Scherrer formula, it can be seen that the crystal organization is fine within the bounds of certain pressure. This conclusion is consistent with the experiment results.

结果表明:随着压力的增加,面间距和格常数都逐渐减小,当压力达到5 GPa时,富铝α相在(200)与(220)面处,面间距较常压力时的分别减小1.07%和1.15%;在常压至3 GPa范围内,粒由粗大的树枝→细小的树枝→粒状、椭球状枝转变的趋势,通过压力对合金凝固溶质扩散系数的影响结合Scherrer公式计算分析其组织变化原因,得出在一定的压力范围内,随着压力的增大,粒尺寸逐渐变小,这一结论与实验结果相符。

The experimental results indicate that when introducing XT-β nucleator into PP, the size of spherulite of the specimen obviously reduces and there appear typical characteristic diffraction peaks of β crystal form in the wide-angle X-ray diffraction pattern....

结果表明:在PP中引入XT-β型成核剂后,试样的球尺寸明显减小,广角X射线衍射谱图出现了典型的β型特征衍射峰;试样的结速率、结温度明显提高,差示扫描量热法谱图出现α型、β型2个熔融峰,β型含量达到总结量的50%~80%;XT-β型成核剂可使体系保持较好的力学性能,PP负荷下热变形温度提高15~40℃。

The DTA result shows that the Ni-Ce-B nano-amorphous alloy has four exothermal peaks located at 275, 330, 423 and 528℃, and the Ni-Ce-P nanoamorphous alloy has three exothermal peaks (278, 410 and 528℃). The temperature of the highest exothermal peak increases by 150 and 170℃ respectively, compared with Ni-B and Ni-P nano-amorphous alloys.

DTA结果表明,Ni-Ce-B纳米非态合金有275、330、423和528℃四个化峰,Ni-Ce-P纳米非态合金有3个化峰(其化峰分别在278、410和528℃),其最高化峰温度较相应Ni-B和Ni-P纳米非态合金的分别升高150℃,170℃。

It is found that the structure of the ternary electroless Ni-W-P coating is greatly influenced by W content in the deposit. It is also found that the requisite content of phosphorus for amorphous Ni-W-P structure is less than that of Ni-P binary alloy coating, and the more tungsten exists, the less phosphorus is required. The hardness of the deposits will be enhanced as the deposit structures are changed from amorphous to mix-or nanocrystalline structures. The corrosion resistance of Ni-W-P ternary alloy is improved as W content increased, and the passivation of amorphous deposits is formed more easily than that of mix-structure and nanocrystalline deposits.

研究发现,化学镀Ni-W-P三元合金镀层的结构受镀层中钨含量的影响较大,非态Ni-W-P三元合金镀层所需磷含量较非态Ni-P二元镀层所需磷含量要低,并且钨含量越高,所需磷含量越少;镀层硬度随镀层结构从非态→混态→纳米态转变而增加;镀层的耐蚀性随镀层中钨含量增加而变好,且非态镀层较混态和纳米态镀层更易形成钝化区。

Main productions: The gem and jewelry kind: Amethyst,Swiss blue,Sky blue,Green amethyst,Pink amethyst, Grape stone,Whisky,Green lemon,Peridot,Garnet,The cottonrose store,Smoky QZ,Crystal and all kinds of natural gems.

主要生产:橄榄石、石榴石、紫、黄、蓝、绿紫,粉紫,香槟,威士忌,芙蓉石、茶、白水、柠檬等各种天然宝石。

Spinel is a compound of magnesia and alumina(Al2O3) and is thus a magnesium aluminate(MgAl2O4), found as accessories in igneous rocks, in metamorphosed aluminous schists, in contact metamorphosed limestones and sometimes in high temperature iore veins.

石主要成分是氧化镁和氧化铝,结习性是等轴系漂亮的正八面体。镁被铁置换就是铁尖石,被锌置换就是锌尖石,铁完全置换镁形成磁铁矿,铬置换铁尖石形成铬铁矿,这些类质同相的等轴系都是八面体结的尖石族矿物。

Encapsulant was driven by capillary force into the space between the chip and substrate. Underfill technique can protect the electrical device and prevent the device from destroying because of external force. Underfill has many defects including the fill time is too long, the situation of short shot and air trap are caused easily, the yield of product of Flip-Chip is not highest and the products are universal. Therefore, there are many factors being studied in this paper to sum up the influence of underfill of Flip-Chip process cause by model parameters.

接合技术为先进电子讯号连接技术中的一种,具有高I/O数、电子讯号路径短以及尺寸小等优点,而采用覆接合之电子元件大部分均以底部充填技术进行封装;底部充填是一种以毛细作用为驱动力在片与基板之间的间隙充填底胶的封装技术,可以确保片不受到外力的影响而损及封装体,但此技术具有充填时间长、容易产生短射与包风等缺点,使得覆封装制程良率不高,间接影响覆封装产品的普及率,因此本文将依各种可能之参数模型对覆封装底部充填制程的影响,以供业界参考。

The results show that the growth rate of tetrapod ZnO is controlled by spiral growth and its crystallization is via VLS model. The condensation of tiny zinc droplets in zinc vapor is the key factor of the formation of tetrapod ZnO. The growth steps are formed on the terminated faces as zinc diffuses outwards and the elongation of whiskers continues until zinc inside the droplets is depleted. VS crystallization, which has little effect on the elongation growth, takes place on side faces of the whiskers and consequently makes the whiskers radius increase.

结果表明: T-ZnO须的结作用是气-液-固方式,须生长受螺旋生长机理控制;锌蒸气中产生凝聚生长的锌液滴是制备T-ZnO须的关键,锌从液滴内向外扩散在须的端面产生生长台阶,随着液滴内的原子向外不断扩散,针体部分就不断地伸长生长,当液滴内的原子全部消耗尽时,须便不再发生轴向生长;气-固方式的作用主要是促进须棱面生长而使须变粗,对轴向生长几乎没有影响。

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