无氮的

The results showed that plant height increasing speed was significantly slow at the former and middle stage when K level was above 180 kg/hm2.On the contrary,the height of case-hardened plant improved markedly.When the K level was above 135 kg/hm2,the stem girth and maximal leaf area differed significantly as compared with CK,so did LAI.Yield and product value per unit area took the first place when 180 kg/hm2 potassium was used.Average price and proportion of middle and first grade tobacco leaf of 225 kg/hm2 potassium treatment were the highest as compared with other treatments and CK.Four economic characters of the two treatments differed at obvious significant level as companied with CK.The total sugar and K2O were increased,nicotine, total N,protein and Cl- were decreased with increased K levels.The potassium lacked symptom was alleviated with increased K levels,no symptoms was observed when 180 kg/hm2 potassium was used,the degree of weather infected fleck was decreased when the K levels was increased.

结果表明，在烟株生长前中期，当施钾量达到180 kg/hm2以上时，株高增长显著变慢，而定型株高则显著增高；茎围和最大叶的面积在施用135 kg/hm2以上的处理与CK之间的差异性达到极显著水平，叶面积指数也存在显著差异；单位面积产量和产值以施用180 kg/hm2的处理居首位，中上等烟比例和均价以施用225kg/hm2的处理最高，这两种处理的以上4个经济性状与CK之间存在极显著性差异；烟叶中的总糖和K2O含量随施钾量的增加而上升，烟碱、总氮、蛋白质和C-含量则下降；缺钾症状随施钾量增加而减轻，至施用180kg/hm2时已无缺钾症状；烟叶气候斑的发生程度也随施钾水平的提高而减轻。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The increased amount of non--exchangeable NH4^＋-N during the incubation indicated as the following tendency, namely, Eum-Orthic Anthrosols 〉 Los - Orthic Entisols 〉 Hap-Ustic Isohumisols 〉 Ust-Sandiic Entisols. Organic material influenced significantly the increased amount of non-exchangeable NH4^＋-N （P was 0.0002, 0.0004 and 0.0003 when incubated at 20 d, 50 d and 60 d, respectively）. NH4^＋-N increased remarkably when Stlpa bungeana and Medicago sativa were added compared with no addition. The contents of non-exchangeable NH4^＋-N increased significantly when added （NH4）2SO4 compared without addition at 20 d, 40 d and 60d of incubation and P was 0.0037, 0.0033 and 0.0027, respectively. It was the result that the NH4^＋-N from （NH4）2 SO4 was fixed within the soil. The increased amount of non-exchangeable NH4^＋-N increased significantly for different soils, on which different vegetation types grew before the collection of soil samples, when incubated at 20 d （P=0.0434）, but not significantly at 40 d and 60d （P=0.7378 and 0.5375）. The increased amount of non-exchangeable NH4^＋-N in the soil, on which crop straw and nitrogen fertilizer had been incorporated for a long-term period, was larger than that of no addition, but it was not significantly different among these two fertilization models. Soil clay, total N and organic matter were positively correlated remarkably with the contents of non-exchangeable NH4^＋-N, the increased amount of non-exchangeable NH4^＋-N had no correlation with soil clay, whereas it had significantly positive correlation with total N and organic matter.

培养期间非交换性NH4^＋-N的增加量均表现为以土垫旱耕人为土最大，其次是黄土正常新成土，简育干润均腐土和干湿砂质新成土较小；添加有机物料极显著影响培养期间的非交换性NH4^＋-N增加量（培养20d、40d和60d时P分别为0.0002，0.004和0.0003），表现为紫花苜蓿和长芒草土壤非交换性NH4^＋-N的增加量均极显著高于不添加有机物料的对照土壤；在培养20d、40d和60d时，加（NH4）2SO4土样非交换性NH4^＋-N的增加量显著大于不加（NH4）2SO4土样（户分别为0.0037，0.0033和0.0027），这是土壤对（NH4）2SO4中NH4^＋-N固定的必然结果；不同植被类型土壤培养20d时的非交换性NH4^＋-N增加量差异显著（P=0.0434），培养40d和60d时差异不显著（p分别为0.7378和0.5375）；长期秸秆和氮肥配施土壤非交换性NH4^＋-N增加量大于不施肥对照土壤，但差异不显著土壤黏粒、全氮和有机质与培养0d、20d、40d和60d时土壤的非交换性NH4^＋-N含量均呈极显著正相关；而非交换性NH4^＋-N的增加量与粘粒无相关性，但与全氛和有机质呈显著正相关。

Adjacent helical chains are racemic. The Ag atom is linked to two nitrogen atoms of the 2-pyridyl and 4'-pyridyl groups from two different 2,4'-bpy ligands as well as to the oxygen atom of the counterion. In 17 and 19, the adjacent helical chains are linked to wavy two-dimensional network structures by the nitrate counterions.

相邻的螺旋链间是外消旋的，Ag 原子与分别来自两个不同2，4'-联吡啶的2-吡啶基和4'-吡啶基的氮原子以及阴离子的氧原子配位，在配合物17和19中，相邻聚合螺旋链被硝酸根离子桥连接起来，变成了一个波浪形的二维网络结构；配合物18是首次通过无桥连配体支持的Ag ××× Ag键将相邻螺旋链连接成二维非穿插的网络结构。

Ceramic bearings can produce oxidation-ho, silicon carbide, silicon nitride and so on, diameter from 3mm-50mm, precision Machinable P0, P6, P5 level; its performance characteristics are: high temperature, oil-free self-lubricating, acid, alkali and salt corrosion , wear resistance, low noise, insulating diamagnetic, since high-speed operation; metal nano-ceramic bearing its production process for a new generation of high content of nano-particles in the heat and pressure infiltration of metal surface is activated to fill the cracks and pits the metal so that 3-5 micron metal surface is more smooth solid surface, greatly reduce the friction, improve Chennai base metals, and greatly increased the life span of bearings, and its characteristics are: long life (as an ordinary stainless steel bearings 2 -- 10-fold), low noise (as an ordinary stainless steel bearings, 70%), wear-resisting, acid, alkali, salt corrosion, high temperature, load large; ceramic bearing and metal nano-ceramic bearing design and development to meet the needs of the market for high-speed, low - noise, high load, the demand for corrosion-resistant; Machinery Production Department to produce aircraft rod end joint bearing, linear guide bearings, the fuel tank of earrings, plastic bearing, non-standard side bearing components, glass door hardware, such as high-precision control products; and provide CNC machining.

陶瓷轴承可生产氧化镐、碳化硅、氮化硅等，内径从3mm-50mm，精度可加工P0、P6、P5级；其性能特点为：耐高温、无油自润滑、耐酸、碱、盐腐蚀、耐磨、低噪音、绝缘抗磁、起高速运转；金属纳米陶瓷轴承其生产工艺为新一代的高含量纳米级微粒在热和压力的作用下被激活渗入金属表面，填补金属缝隙和凹坑，使金属表面3-5微米表面更光滑坚固，大大降低其摩擦力，提高金属的奈酸碱性，并大大提高了轴承的寿命，其特性为：长寿命（为普通不锈钢轴承的2-10倍）、低噪音（为普通不锈钢轴承的70%）、耐磨、耐酸、碱、盐腐蚀、耐高温、负载大；陶瓷轴承与金属纳米陶瓷轴承的设计开发以满足市场对高转速、低噪音、高负载、耐腐蚀的需求；机械生产部以生产机杆端关节轴承、直线导轨轴承、油缸耳环、塑料轴承、非标端轴承零部件、玻璃门控五金等高精度产品；并对外提供数控加工。

In the negative and interrogative forms, of course, this is identical to the non-emphatic forms.

。但是，在否定句或疑问句里，这种带有"do"的方法表达的效果却没有什么强调的意思。

Go down on one's knees;kneel down

屈膝跪下。。。下跪祈祷