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The key difference between hot cathode glow discharge and conventional cold cathode glow discharge is that the cathode is in a hot state with the temperature about 700~1600℃ in a hot cathode glow discharge.

热阴极直流辉光放电区别于常规冷阴极辉光放电的关键之处在于,在辉光放电过程中,阴极处于700-1600℃的"热"状态,并且放电电流大,工作气压高。

In order to research dielectric barrier discharge characteristics at characteristics at various exciting voltage peak V(subscript P-P and dielectric thickness l(subscript d, a DBD experiment system was established. Using Q-V Lissajous figure method, the effect of exciting voltage peak V(subscript P-P and dielectric thickness l(subscript d on the main discharge parameters were studied.

为了解介质阻挡放电在不同激励电压峰值V和介质厚度l下的放电特性,通过建立介质阻挡放电试验系统,采用Q-V Lissajous图形法研究了激励电压峰值V、介质厚度l对DBD主要放电参量的影响。

The present work was therefore designed to record single unit discharging from afferent fibers of DRG neuron, collect the interspike interval sequence of neuronal discharges, sum and analyze the rhythmic pattern of neuronal discharges, and finally perfuse the injured DRG neuron with different potassium channel blockers in order to identify the underlying dynamic rules of variations in the rhythmic patterns of neuronal discharges.

本研究从损伤DRG传入纤维中引导单根神经纤维放电,采集神经纤维放电的动作电位间期interspike interval,ISI)序列。归纳和分析神经元放电的节律形式,应用不同〓通道阻断剂灌流损伤DRG,观察神经元放电节律变化的动力学规律。主要结果如下

The ultra -- high -- frequency and ultra -- wideband partial discharge detecting methods is newly put forward. It is important for development of partial discharge de...

本文简明扼要地阐述了局部放电信号的物理本质和超宽频带检测原理,运用自行研制的超宽频带局部放电检测系统,研究了典型放电信号和干扰信号的本征特征,为进一步建立超宽频带局部放电检测指纹库、提高绝缘诊断的准确性奠定了基础。

An apparatus simulating the discharge in AC PDP cell is thus designed. It consists of a driving power, discharge cell and vacuum system. Measuring are made possible on the working voltage and stability of dielectric protective film made from different materials with a variety of different processes. The secondary electron emission property can thus be properly reflected. Examinations are also the gas species, mixture composition ratio and pressure, discharge gap, etc., with reference to the discharge characteristics in AC PDP.

该装置由驱动电源、放电室及真空系统组成,能够模拟AC PDP的工作条件和过程,可用来测量AC PDP工作过程中用不同材料、方法及工艺制成的保护膜的工作电压、稳定性等,从而衡量保护膜的二次电子发射性能,还可用来测量AC PDP放电单元内所充气体的种类、混合比例、压力以及放电间隙的距离等参数对AC PDP放电特性的影响。

Arc-glow plasma depositing technique is a new surface coating method. With the help of vacuum arc discharge, a cold cathode arc source continually emits ion beams of coating elements with high currency density and high ionizing ratio.Upon the ion bombard and diffusion work on, the surfaces of the parts form deposited layers, diffusion layers. In this study, a commercial magnesium alloy AZ91 was coated with Ti film layer.

加弧辉光离子渗镀技术将辉光放电与弧光放电有机地结合起来,利用辉光放电空心阴极效应使工件迅速升温,同时在真空容器壁上设置一个或多个金属阴极电弧靶源,利用真空电弧放电而不断地发射出高能量、高电流密度、高离化率的欲渗金属离子流,依靠扩散和离子轰击作用快速渗入工件表面层,在工件表面可以形成渗层、镀层、渗镀结合层。

The emission of N_2 in discharge gap is detected using optical emission spectrophy. The discharge reactor was put in lightproof box to avoid the disturbance from outside lights. A small hole was drilled in one sidewall of the box, and the fibre was mounted coupling to the inlet (1mm) into the hole. A tube with the inner diameter of 1.1mm was set in the front of the hole. In this way, only the light from a certain direction emitted from the discharge reactor could transfer into the inlet through the tube. The reactor could be moved in the vertical direction of the fibre, and the spectrometry can collect the total emission along the fibre inlet in single-shot measurement.

利用光学发射光谱仪对多针对板电晕放电放电间隙内的N_2发射光谱进行测量,放电反应器置于暗箱中以避免外界对光谱测量的影响,将光谱仪的光纤耦合入口固定在暗箱侧壁的小孔内,小孔孔径为光纤耦合入口直径,在小孔前方安装孔径为1.1mm的细直管,只采集与光纤耦合入口在同一直线上的发光,避免放电区其它区域的发光被同时接收。

Electrochemical measurements of the singler A2B7 and A5B19 phase alloy showed that, the activation properties of singler type A2B7 and AsB19 phase composition alloys were the same. The maximum discharge capacity (386.12mAh/g) of A2B7 type phase alloy was slightly higher than the maximum discharge capacity (371.38mAh/g) of A5B19 type phase alloy. The cyclic stability of alloy electrode of both A2B7 and A5B19-type phase alloy were all very well. The capacity retention rate of 100 cyclic was more than 85%.The high-rate discharge (HRD900=85%) of AsB19phase alloy was higher than the high-rate discharge (HRD900=76.6%) of A2B7phase alloy.

对较单一的A2B7与A5B19型物相合金进行电化学测试,结果表明:A2B7型相结构储氢合金的活化次数与A5B19型相结构储氢合金的活化次数基本相同,A2B7型物相合金的最大放电容量(386.12mAh/g)略高于A5B19型物相合金的最大放电容量(371.38mAh/g)。A2B7与A5B19型物相合金电极100个循环容量保持率都在85%以上,且差别不大。A5B19型相结构合金的高倍率放电性能(HRD900=85%)高于A2B7型相结构合金的高倍率放电性能(HRD900=76.6%)。

Intravenous medium and high erythromycin and azithromycin dose had obvious exciting effect on spontaneous afferent nerve discharge (erythromycin: 8.34 ± 0.37, 8.54 ± 0.26 vs 7.78 ± 0.23, 7.84 ± 8.27; azithromycin: 8.57 ± 0.43, 8.28 ± 0.38 vs 7.74 ± 0.21, 7.86 ± 0.30) and gastric distention-induced afferent nerve discharge of subdiaphragmatic vagus nerve (erythromycin: 8.54 ± 0.34, 8.61 ± 0.20 vs 8.13 ± 0.36, 8.19 ± 0.21; azithromycin: 8.54 ± 0.30, 8.42 ± 0.21 vs 8.24 ± 0.22, 8.22 ± 0.19), which was statistically significant compared with the control and low dose groups.

结果: 静脉注射小剂量红霉素和阿齐霉素自发放电和对扩胃诱发放电均无显著变化, 20 min后中、大剂量红霉素和阿齐霉素注药后自发放电(红霉素: 8.34±0.37, 8.54±0.26 vs 7.78±0.23, 7.84±8.27;阿齐霉素: 8.57±0.43, 8.28±0.38 vs 7.74±0.21, 7.86±0.30)和对扩胃诱发放电均增强(红霉素: 8.54±0.34, 8.61±0.20 vs 8.13±0.36, 8.19±0.21;阿齐霉素: 8.54±0.30, 8.42±0.21 vs 8.24±0.22, 8.22±0.19)与相应的对照组和小剂量组间差异有统计学意义。

The improvement of the main switch and the discharge chamber was also conducted, that leads to increasing the discharge current amplitude and restraining the unwished discharge paths.

最后对主开关和放电室进行了改进,提高了放电电流的幅值,抑制了放电室中的旁路放电,提高了装置的性能。

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