擦除

In one design, the block is the minimum unit of elements that are simultaneously erased.

在擦除操作中，存储在每个区块中的数据同时被擦除。

When in the Erase, 28F001 based on Byte for the smallest units modified; in the write data, chip programming to add a certain voltage, and BOOT BLOCK erase block data to be combined with the deletion of a specific voltage.

在擦除时，28F001是以Byte为最小修改单位的；在写入数据时，芯片上要加上一定的编程电压，并且BOOT BLOCK块内数据的擦除要加上特定的删除电压。

Niobate. On this basis, we study the influence of magnetic field on the erasure process of the

种不同配置的研究发现磁场对掺铁铌酸锂晶体的擦除过程影响很大，能够对擦除时间进行有

PLC controllers were used earlier instead of PLASH memory and have had EPROM memory instead of FLASH memory which had to be erased with UV lamp and programmed on programmers.

PLC 控制器比快擦型存储器使用得更早， EPROM 存储器比快擦型存储器也更早，快擦型存储器必须用紫外线（ UV ， Ultra-Violet Ray ）灯擦除，并在编程器上进行编程。

The results are unsure for experimental use;The rabbit's corneas that were removed with upper-half of corneal limbal epithelium lamella and erased the center corneal epitheliums were transparent with intact corneal epithelium;In the approach,the corneal and limbal epitheliums were burned with a cotton swab socked in 1 mol/L NaOH,there were 4 rabbits' corneal stroma happened perforation or ulcer and symblepharon,and the other one presented corneal epithelium phenotype.This is an applicable method to create the pathological model of corneal limbal stem cell total deficiency.

结果表明，处理后4周，全周角膜缘上皮板层手术切除，中央角膜上皮层用1 mol/L NaOH擦除的5只试验家兔角膜表面全部血管化、结膜化，未发生睑球粘连，角膜基质胶原纤维完整未见溃疡、穿孔等病变，细胞印迹学检查为结膜表型，可作为实验性角膜缘干细胞移植的病理模型；全周角膜缘上皮板层手术切除，中央角膜上皮用生理盐水擦除的5只试验家兔，有2只为结膜表型，另3只为角膜表型，观察期内结果不稳定；半周角膜缘上皮板层手术切除，中央角膜上皮层用生理盐水擦除的5只试验家兔，角膜表面透明，全部为角膜表型；直接用1 mol/L NaOH擦除角膜缘和中央角膜上皮的试验家兔，有4只角膜基质胶原纤维断裂、溶解，并伴有严重的溃疡、穿孔、睑球粘连等病变，不能用于移植试验，另1只角膜表面透明，未见结膜和新生血管长入，细胞印迹学检查为角膜表型。

Further, the degradation due to single-electron locally trapping/de-trapping in horn-shaped SuperFlash does not occur in the triple-gate flash cell. This is because of planar poly-to-poly erasing in the triple-gate flash cell instead of tip erasing in the horn-shaped SuperFlash cell.

但是，在这篇论文中，我们发现经过长期循环擦写后，三栅 SuperFlash闪存在电子被擦除后的阈值电压的增加不是因为编程时而导致的浮栅氧化物的退化，而是由于擦除时所造成的隧穿氧化物的退化。

Thus erasure of the identification mark is practically impossible, because the location of the erasing spot of a recorder cannot be controlled precisely in radial direction.

因为记录器的擦除光点的位置不能在半径方向被精确地控制，擦除识别标记实际上是不可能的。

A value of zero means 1 erase group, 127 means 128 erase groups.

一个 0 意味着 1 个可擦除组，127 是 128 个可擦除组。

The expression of space-charge field is given out in the paper with two time constants τpa and τpb. When considering and not considering the photovoltaic effect, the diagrams of the two time constants as a function of irradiance in units of 1/ are the same.

理论研究表明，空间电荷场的形成和擦除与两个时间参数有关，在考虑或者不考虑光生伏打效应两种情况下，这两个参数随擦除光强的变化有基本相同的变化规律，光栅的写入和擦除有相同的结果。

Eatures · Compatible with MCS-51 Products · 2K Bytes of Reprogrammable Flash Memory – Endurance: 1,000 Write/Erase Cycles · 2.7V to 6V Operating Range · Fully Static Operation: 0 Hz to 24 MHz · Two-Level Program Memory Lock · 128 x 8-Bit Internal RAM · 15 Programmable I/O Lines · Two 16-Bit Timer/Counters · Six Interrupt Sources · Programmable Serial UART Channel · Direct LED Drive Outputs · On-Chip Analog Comparator · Low Power Idle and Power Down Modes Description The AT89C2051 is a low-voltage, high-performance CMOS 8-bit microcomputer with 2K Bytes of Flash programmable and erasable read only memory.

eatures ·兼容MCS - 51的产品·及2k字节的编程快闪记忆体-耐力： 1 000写/擦除周期·在2.7 V至6 V的操作范围·完全静态的运作： 0 Hz至24兆赫·两个层次的程式记忆体锁· 128 × 8位内部RAM · 15个可编程I / O线·两个16位定时器/计数器· 6中断源·可编程串行UART的频道·直接驱动LED产出·单晶片模拟比较·低功耗的闲置和掉电模式描述该AT89C2051的是一个低电压，高性能的CMOS 8位微机与及2k字节的Flash可编程和可擦除唯读记忆体。

They weren't aggressive, but I yelled and threw a rock in their direction to get them off the trail and away from me, just in case.

他们没有侵略性，但我大喊，并在他们的方向扔石头让他们过的线索，远离我，以防万一。

In slot 2 in your bag put wrapping paper, quantity does not matter in this case.

在你的书包里槽2把包装纸、数量无关紧要。