掺杂的

We show that, compared to most photonic crystals made from two different dielectrics, these doped semiconductor/dielectrics 1D photonic crystals can not only form the photonic gap, but also can enhance the terahertz transmission through n-GaAs.

研究结果发现，与一般由两种介电材料组成的一维光子晶体不同，由于掺杂半导体中自由载流子对太赫兹波存在较强的吸收，所以这种材料组成的一维光子晶体除可形成光子带隙外，还可以增强n-GaAs对太赫兹波的透射。

The optically active defect centers of such types as E', two kinds of oxygen-deficiency and some kinds of oxygen-richness in silica play an important role in optical communication fiber and UV absorption. The researches on some oxygen-deficient defects and the metal ions doped or implanted semiconductor nanoparticles with fine luminescence properties have made it possible for silica to be used in the lighting field.

氧化硅材料本征E'、2种缺氧型以及各种富氧型光活性缺陷中心在光导纤维及紫外吸收等应用中扮演了很重要的作用，某些具有良好发光性能的缺氧中心及掺杂离子或半导体纳米粒子发光中心的深入研究使氧化硅材料在照明领域具有良好的应用前景。

According to XRD analysis, the high concentration doping of dysprosium ions in Fe3O4 can not be obtained due to the difference of ionic radius, and Fe^3＋ ions are replaced by only a small amount of dysprosium ions.

通过X射线衍射分析发现，由于离子半径的不匹配，Fe3O4中稀土离子的高浓度掺杂不能实现，仅有极少量的稀土离子取代了Fe3O4中的Fe^3＋。

Decreasing N diffusion width and distance between N diffusion and emitter of minority carriers current can increase MAAP efficiency.

由模拟结果可知，减小N型扩散区的宽度，减小N型扩散区与少数载流子发射极之间的距离，增加P型扩散区的掺杂浓度以及使第二个衬底接触浮空可以有效地提升多环有源保护结构的效率。

In addition, the electroluminescent device based on DADIN as doping emitter has 1.5 times of current efficiency as DCJTB with high color saturation, indicative of a promising red emitting alternate to DCJTB.

研究表明，以DADIN作为掺杂型电致发光材料的有机电致发光器件的电流效率是DCJTB的1.5倍，实为DCJTB理想的替代品。

The effects of the silicon nanowire length, width and doping concentration on I-V characteristics of silicon nanowire field effect transistor are also discussed.

矽奈米线的长度与宽度以及掺杂浓度均会对矽奈米线场效电晶体的I-V特性产生影响，其影响的机制与结果也会有合理的解释与分析。

The results showed that the mobility of free carriers is the key inluencing factor on the electrical conductivity of intrinsic nc-Si: H films but the effect of free carrier concentration is finite, while the free carrier concentration and mobility are both the main influencing factors on the electrical conductivity of phosphorus-doped nc-Si: H films. Its transportability can be reasonably explained by a HQD model.

研究结果表明影响本征纳米硅电导率的主导因素是载流子的迁移率，而自由载流子浓度影响有限；影响掺磷纳米硅薄膜电导率的因素既包括磷掺杂产生的自由载流子，又包括迁移率，其输运过程可用量子点隧穿模型合理解释。

In group-V elements, the calculated acceptor ionization energy of N is 0.31 eV, which is much smaller than that of P (0.77 eV) and As (0.89 eV), and the acceptor formation energy of N is lowest among them.

在Ⅴ族元素当中，计算出N的受主电离能为0.31eV，远小于P(0.77eV)和As(0.89eV)，并且N的受主形成能在这三种元素当中也是最小的，因此可以说N是Ⅴ族元素中比较理想的p型掺杂元素。

However, the spinel LiMn〓O〓 and olivine LiFePO〓 are very hopeful material with low price and few toxic and higher specific capacity, etc.

本文从降低锂离子电池的生产成本和提高材料的稳定性出发，主要研究尖晶石LiMn〓O〓和橄榄石LiFePO〓的合成制备方法，以及掺杂提高电池材料的稳定性等问题。

The dilutions of magnetic materials have an important effect on the properties of system.

磁掺杂在许多材料中普遍的存在，磁性材料中杂质的存在对系统物性的变化产生很大的影响。

It has been put forward that there exists single Ball point and double Ball points on the symmetrical connecting-rod curves of equilateral mechanisms.

从鲍尔点的形成原理出发，分析对称连杆曲线上鲍尔点的产生条件，提出等边机构的对称连杆曲线上有单鲍尔点和双鲍尔点。

The factory affiliated to the Group primarily manufactures multiple-purpose pincers, baking kits, knives, scissors, kitchenware, gardening tools and beauty care kits as well as other hardware tools, the annual production value of which reaches US$ 30 million dollars.

集团所属工厂主要生产多用钳、烤具、刀具、剪刀、厨具、花园工具、美容套等五金产品，年生产总值3000万美元，产品价廉物美、选料上乘、质量保证，深受国内外客户的青睐