掺杂的

The effects of doping lanthanum on stabilizing the crystal structure were analyzed in terms of the material structure, charge and discharge testing results and cycle performance.

从材料的晶体结构、充放电测试和循环性能等方面分析了掺杂元素镧在稳定晶体结构中的作用。

Quantum effects in Si n-MOS inversion layer at high substrate concentration. Solid-State Electron, 1990, 33(12): 1581～15854 Van Dort M J, Woorlee P H, Walker A J, et al. Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFET's.

结果表明：在高衬底掺杂浓度时，即使在弱反型区量子化效应也能导致载流子分布和电流产生明显的降低(例如： 1.5×1018 cm-3时，可降低一个数量级以上)，从而导致开启电压的升高。

The lanthanum doped modified spinel lithium manganate LiMn(subscript 2-x)LaO4 (x=0, 0.01, 0.02, 0.03, 0.04, 0.05, 0.10) used for cathode of lithium-ion batteries was prepared by solid-state method.

采用高温固相法，合成了掺杂改性的锂离子电池阴极材料尖晶石结构的LiMn(下标 2-x)LaO4(x=0、0.01、0.02、0.03、0.04、0.05、0.10)。

In this thesis, we focus on the microstructural and optoelectronic properties of doped nc-Si:H films and their related device application.

在本毕业论文中，我们主要讨论掺杂氢化纳米硅薄膜的微观结构和光电特性以及相关的器件应用。

Many of the so-called "quality education", which mixed with the number of water!

许许多多的所谓的"素质教育"，这其中掺杂着多少水分！

Phosphine(PH3)is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping,ion implement and chemical vapor deposition etc.

磷化氢在电子工业中主要用作外延硅半导体的一种n型掺杂剂，在化学气相沉积和离子注入中被用作一种磷源，在发光二极管用磷砷化镓膜的生产中也占有重要地位。

Simulation results show that the doping profile and width of P base region are important to the on-state voltage drop of Gate Controlled Thyristor.

模拟结果表明，P基区的掺杂浓度和宽度对门极换流晶闸管通态压降有着重要的影响。

The effects of the position and the optical thickness of the defect layer on the defect modes was analyzed.

结果表明，在准周期结构光子晶体引入缺陷，光子晶体禁带中也产生了缺陷模；随着掺杂缺陷层位置和光学厚度的变化，缺陷模的位置和共振透射峰也随之变化。

Cr doping at B-site could decrease the cathode overpotential without great loss of electric conductivity.

虽然Cr掺杂会小幅度降低〓的电导率，但同时，它也能够降低〓阴极的过电位。

The doping profile within the body and at least a portion of source and drain regions is symmetric about a centerplane of the body region parallel to the main surface of the device.

体区中以及至少一部分源极和漏极区中的掺杂分布关于平行于器件主表面的体区的中心面对称。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。