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When doping the rare earth elements in nano-TiO〓, the relationships between the photocatalytic activities and the ratio of electronic affinity to ionic radius of doped atomic ion were studied.

在稀土元素对纳米TiO〓光催化剂的掺杂研究中,发现催化活性与掺杂元素的稳定氧化态的电子亲和势与离子半径的比值Ea/r有较好的相关性,而与Ea/r〓的相关性相对较低。

Following are summary of our works:(1)The powders of LaCr_(0.9)Co_(0.1)O_3, LaCr_(0.9)Fe_(0.1)O_3, LaCr_(0.9)Ni_(0.1)O_3, LaCr_(0.95)Sn_(0.05)O_3 and LaCr_(1-x)Ti_xO_3(x=0.0-0.3) were single perovskite phase with orthorhombic structure. The gas-sensing properties of their thick film sensors were tested in the acetone, ethanol, normal propyl alcohol, carbinol and formaldehyde organic gases. The sensitivity of the sensors can not be enhanced effectively by doping Co、Fe、Ni、Sn elements in B-site of LaCrO_3. Ti dopant with proper concentration can greatly improve the gas-sensing properties, which make the sensor display higher sensitivity and quicker response-recovery characteristics.

所得结果摘要如下:(1)LaCr_(0.9)Co_(0.1)O_3、LaCr_(0.9)Fe_(0.1)O_3、LaCr_(0.9)Ni_(0.1)O_3、LaCr_(0.95)Sn_(0.05)O_3和LaCr_(1-x)Ti_xO(来源:ABfd1dC论文网www.abclunwen.com)_3(x=0.0-0.3)粉体为正交单相钙钛矿结构,其厚膜型气敏元件在350℃时对丙酮、乙醇、正丙醇、甲醇、甲醛等有机气体的气敏性能测试表明:0.1mol Co、Fe、Ni和0.05mol Sn元素在LaCrO_3的B位进行掺杂后,不能有效提高材料对以上测试气体的气敏性能;而Ti元素的适量掺杂可以极大地改善LaCrO_3的气敏性能,使之显示出对丙酮气体的高灵敏度和快速响应恢复能力。

A novel lightly-doped channel approach for linearity improvement of InGaP/InGaAs pseudomorphic high-electron-mobility transistor device was presented. Light doping in the channel region of the conventional δ-doped InGaP/InGaAs PHEMT was adopted to provide a uniform and symmetric electron distribution in the channel region to achieve flat extrinsic transconductance distribution under different gate bias conditions.

本次实验在传统矽平面掺杂元件结构的通道区域中加入微量的杂质浓度掺杂,使得电子在元件通道层中的分布更为均匀及对称,以期望在不同的闸极偏压条件下得到较为平坦的转导值分布曲线,改善磷化铟镓/砷化铟镓假晶式高电子迁移率电晶体的线性度表现。

It has been proved that light scatter in KDP crystal aggravated when pyrophosphate was doped into the growth solution,which distributed ununiformly in prism and pyramidal sectors of KDP crystal.

掺杂焦磷酸的情况下降温生长了 KDP晶体,采用激光层析法对晶体的光散射现象进行了观察,掺杂后晶体的光散射现象明显加剧,晶体的锥面、柱面和椎柱交界面处的散射点密度并不相同,其原因在于焦磷酸对KDP晶体的锥面和锥面的影响不同。

Temperature, doping and electric field dependent parameters including energy band, impurity and carrier distribution, mobility and PN junction, etc are established The models which is demanded in unification and accordance in accurance, simulation speed, effective range and application efficiency are also obtained 3、Some unique or key low temperature physic effects, such as carrier freeze-out or trapping effect, mobility enhancement effect, steepened subthreshold effect, small dimension effect and heavy injection effect, as well as their influence to the device cryogenic performance are discussed and analyzed Based on the completely understanding of the physic nature and characteristics in low temperatures operation, the technique methods to overcome or to utilize the effects are also presented 4、By systematic analysis of carrier transportation, the device physic analytical model for advanced polysilicon emitter transistor with better cryogenic performance that can be used to simulate the quantity relations between device terminal characteristics and internal structure, doping distribution as well as operation conditions is presented.

建立了依赖于温度、掺杂和电场因子,并且包括材料和结构的各参量数学物理模型,主要包括能带、掺杂及载流子分布、迁移率和PN结等模型,在计算精度、速度、应用范围和使用效率等方面达到和谐统一。 3、深入研究了低温条件下一些特有的或起关键作用的低温物理效应,主要包括载流子冻析或陷阱效应、迁移率增强效应、亚阈性能改善效应、小尺寸效应和大注入效应等,并分析其对器件低温性能的影响,在对低温器件工作的物理本质和特点有深入认识和了解的基础上,找出利用或克服低温物理效应的技术措施。

The calculational results show that on one hand,the phosphorus atom only affect the bondings of a few atoms of its vicinity,the conductivity increases as the doped concentration increases; while on the other hand ,the doped concentration is higher,the integrity of the diamond lattices are much worse.

计算的结果表明,一方面,磷原子只对它附近的几个原子内的成键有影响,电导率随着掺杂浓度的增加而增加;而另一方面,金刚石晶格的完整性则随着掺杂浓度的增加而降低。

The 1%-Ni-doped TiO_2 calcined at 400℃has the best photocatalic ability.An indigo carmine solution of 10 mg/L was completely photodegraded in 50 minutes in the presence of as-obtained photocatalyst under visible light.A series of structure analysis,such as XPS,TEM,are employed to investigate the structure of the Ni/TiO_2 composite in details.The results indicate that at the lower temperature,instead of the simple interface compounding reported by some references,the Ni ions could be inserted into the crystal lattice of TiO_2,and form the innovative material.

通过XPS、TEM等多种表征手段对镍掺杂纳米二氧化钛的结构与光(来源:6414A41BC论文网www.abclunwen.com)催化性能进行了深入分析研究,发现在较低温度下煅烧可以获得镍离子晶格掺杂而不是表面复合的新型材料,通过镍离子缺陷能级的引入改变了二氧化钛的能级结构,提高了材料可见光下的光催化氧化的效率。

The concept of closer interchain coupling with an increase of y is used to illustrate the cause of abrupt changes and the transformation of main elemen...

用链间耦合随掺杂浓度增强的概念,说明了出现上述两个突变的原因和主要元激发的转变,解释了磁化率随掺杂浓度变化的实验规律,讨论了三个区域的导电模型和电导率随温度的变化关系。

On the base of the above-mentioned results, this paper further investigated the local micro-actuating behaviors induced by the volume change of PPy doped with ssDNA on the microdot electrode within the microchannel. It was found that, in 80μm channel the volume change of PPy film doped with ssDNA probe could enhanced the effect of DNA hybridization.

在上述结果的提示下,论文进一步在微通道内初步考察了在ssDNA掺杂修饰的PPy微点上因其电化学氧化还原所致的体积变化率而造成的局部微致动行为,发现在80μm微通道内掺杂了ssDNA探针的PPy薄膜的体积变化足以引起随后DNA杂交效果的变化。

The absorption properties of Nd:YVO4 crystals with various doping levels and lengths are reported.The 1 064 nm laser properties are compared,and the effective stimulated emission crosssections of different doping levels are calculated with upper-level life-times we have measured.Our investigation give a good advice for the optimization of LD end-pumped Nd:YVO4 laser.

对多种掺杂浓度、长度的Nd:YVO4晶体进行了吸收性质、激光性质的研究和对比,根据实验结果和测得的上能级寿命计算了不同掺杂浓度Nd:YVO4晶体的有效受激发射截面,对激光二极管端面泵浦Nd:YVO4固体激光器的最优化有实际指导意义。

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