掺杂的

The geometric optimization of C_(59)Sm and C_(60)Sm shows that the replacement of a C atom with a Sm in C_(60) yields a stable substitutionally doped fullerene C_(59)Sm, and among the five possible optimized geometries for C_(60)Sm, the most favorable exohedral sites are above the center of a hexagon and a pentagon ring.

替代掺杂富勒烯C_(59)Sm与外掺杂富勒烯C_(60)Sm几何结构与电子结构分析表明，以Sm原子取代C_(60)分子中的一个碳原子后碳笼仍保持稳定的替代结构，而对五种可能的C_(60)Sm结构，Sm原子倾向于栖息在六碳环与五碳环的空洞上方。

The result showed that the pre pared doped polypyridine was irregular granule with 0.1~0.6 μm granularity. The electrochemical performance of H3PMo12O40 and polypyridine could be manifested. The product possessed definite thermostat-bility. Polypyridine was decompounded at temperature above 511℃.

结果表明，制备的掺杂态聚吡啶形貌为0.1~0.6μm的不规则颗粒，能表现出杂多酸和掺杂态聚吡啶的电化学行为，并具有一定的热稳定性，聚吡啶在511℃以上分解失重。

The barrier layer is removed, and the walls of the trench are etched in a manner that etches the lesser doped regions of the substrate at a higher rate than the higher doped regions of the substrate to widen and lengthen the trench and to form rounded corners at the intersections of the walls of the trench.

除去阻挡层，并以比衬底的更高掺杂区域更高的速率蚀刻衬底的更低掺杂区域的方式蚀刻沟槽壁，将沟槽加宽和加长并在沟槽壁的相交处形成圆角。

Secondly, the energy band structure of codoped-TiO2 shows that an acceptor level and a donor level present inside the band gap, and an electron on the donor level passivates a hole on the acceptor level, so the systems still keep semiconductor character and enhance the separation of electron-hole pairs excited by photo irradiation.

另外， V： N共掺杂TiO2的能带结构表明：导带底下方施主杂质能级上的一个电子刚好补偿价带顶上方受主杂质能级上的一个空穴，使掺杂后TiO2材料表现出半导体的显著特征，这有利于电子—空穴对的分离，提高量子产率。

Results show that MoS2-Ti composite coatings grow in islands pattern, their cross-section appear to be dense columnar structure.

结果表明：不同Ti含量的MoS2-Ti复合薄膜呈岛状生长模式，断面呈致密细柱状，结晶状态均为无定形态；薄膜的显微硬度随Ti含量增加而升高；MoS2-Ti复合薄膜在大气中的摩擦磨损性能优于MoS2薄膜，掺杂适当Ti可以使MoS2-Ti复合薄膜的摩擦曲线波动减小，耐磨寿命提高，在本试验研究范围内，含30%Ti复合薄膜的耐磨寿命最长，当Ti掺杂量达到50%时MoS2-Ti复合薄膜失去润滑性能。

With the niobium densities in SrTiO_3 increasing, the final potential and the discharge time of the SNH electrode first increased. When the density of Nb in SrTiO_3 thin films was 2%, the Potential was -0.9 V and the discharge time was 25 minutes.

随着掺杂浓度的提高，相应的SNH电极的光充电的最终电位及其放电时间都增加，当Nb的掺杂浓度为2％时，其值分别为-0.9V，235分钟。

The influence of the doped content of Tb3+ ions on the emission intensity was also investigated and the concentration quench occurs when the doped content of Tb3+ ions is beyond 9%, which can be explained by electric multipole-multipole interaction according to Dexters theory.

考察了掺杂离子浓度对样品发光效率的影响，Tb3+的最佳掺杂摩尔分数为9%，分析了其自身浓度猝灭机理，探讨了敏化剂Ce3+离子的加入对荧光粉发光强度的影响。

At the same time, the nonlinearity enhancement is correlative with pump and dopant concentration.

介绍了掺杂稀土元素的光纤非线性增强的机理，给出了几种常用的掺杂稀土元素光纤和波导的非线性数据。

The dopings by Al and V had significant effects on the thermoelectric transport performances and could increase the thermoelectric properties of the CrSi_2 single crystal greatly.

Al或V置换掺杂对CrSi_2单晶的热电传输性能有重要的影响，在研究的温度范围内，Al或V置换掺杂会提高CrSi_2单晶的热电性能。

The dopping of Ce would not lead to new PL peaks, but an appropriate Ce dopping could increase the PL intensity.

铈的掺杂没有引发新的荧光现象，适量铈的掺杂能够增强催化剂样品的荧光强度。

However, as the name（read－only memory）implies, CD disks cannot be written onorchanged in any way.

然而，正如其名字所指出的那样，CD盘不能写，也不能用任何方式改变其内容。

Galvanizes steel pallet is mainly export which suits standard packing of European Union, the North America. galvanizes steel pallet is suitable to heavy rack. Pallet surface can design plate type, corrugated and the gap form, satisfies the different requirements.

镀锌钢托盘多用于出口，替代木托盘，免薰蒸，符合欧盟、北美各国对出口货物包装材料的法令要求；喷涂钢托盘适用于重载上货架之用，托盘表面根据需要制作成平板状、波纹状及间隔形式，满足不同的使用要求。