掺杂的

In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.

在一些实施方案中，渐变半导体缓冲层位于隐埋氧化物层下面，而在其他实施方案中，包含掺杂有B或C中至少一种的Si的掺杂半导体层位于隐埋氧化物层下面。

Functions of different doping systems are compared, and their doping mechanism and properties are presented.

对不同掺杂体系所起的作用作了比较，并探讨了各自的掺杂机制和特点。

In doped ZnO nanowires showed a two step field emission mode and enhanced field emission property.

通过In 掺杂明显提高 ZnO 纳米线的场发射性能，并改变了场发射特性，即In 掺杂 ZnO 纳米线除价带电子发射外，导带电子在低电场时参与发射的特征明显。

The results showedthat the Curie temperature of carbon doped ZnO system changed ranges from 251 to 439 Kas the concentration variation.

利用第一性原理和蒙特卡洛耦合计算方法获得了碳掺杂ZnO的居里温度，在不同的掺杂浓度下，居里温度分布251～439 K之间。

Otherwise,the magnetic moment drops rapidly with the increase of Co content inpowder and film samples.

在不同Co掺杂量的样品中，每Co磁矩随掺杂量的增加而减小。

The calculated results revealed that the structural stability of SrTiO2 was weakened after In and Sc doping and that the partial substitution of In for Ti merely resulted in local structural changes around the dopant sites.

计算结果表明：掺杂后，SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3的稳定性降低，体系显示p型简并半导体特征，掺杂仅引起杂质原子近邻区域的几何结构发生变化。

The signal height and decay time of the transient photoconductivity as the function of the iridium dopant concentration are studied at 77K.

研究在 77K时，铱掺杂溴化银微晶瞬态光电导的信号强度和衰减时间与铱掺杂浓度间的关系。

By means of strictly controlled sample preparation and various measurements of XRD, magnetic properties, XPS, Seebeck effect and electron microscopy, the effect of doping concentration and doping type on the phase separation is systematically investigated.

X 射线分析、磁测量、 XPS 分析、热电势测量、电子显微镜分析等实验手段，对掺杂浓度、掺杂质类型对相分离的影响作了较系统的研究。

The threshold voltage increases with the increase of the thickness in nanometer thickness range.

因此人们对BN膜的场发射进行了一些研究，C掺杂[10]和S掺杂[11]的BN膜场发射具有

We have deposited the undoped and boron doped silicon thin films in the p champer using radio frequency plasma enhanced chemical vapor deposition method.

采用传统射频等离子体增强化学气相沉积技术，沉积了未掺杂和硼烷掺杂浓度为0.4％的两个系列的硅薄膜。

It has been put forward that there exists single Ball point and double Ball points on the symmetrical connecting-rod curves of equilateral mechanisms.

从鲍尔点的形成原理出发，分析对称连杆曲线上鲍尔点的产生条件，提出等边机构的对称连杆曲线上有单鲍尔点和双鲍尔点。

The factory affiliated to the Group primarily manufactures multiple-purpose pincers, baking kits, knives, scissors, kitchenware, gardening tools and beauty care kits as well as other hardware tools, the annual production value of which reaches US$ 30 million dollars.

集团所属工厂主要生产多用钳、烤具、刀具、剪刀、厨具、花园工具、美容套等五金产品，年生产总值3000万美元，产品价廉物美、选料上乘、质量保证，深受国内外客户的青睐