掺杂的

This invention discloses a new technology for preparing rear earth ionic doped fiber prefabricated rods with DC-RTA technology in a sol-gel method including preparing sol containing necessary doped ions, coating said sol uniformly on the inner wall of the quartz glass tube and burning it under high temperature to coagulate and vitrify them to a doped layer and repeating the above process to form a fiber prefabricated rod by oxygen and hydrogen flame after the doped layer reaches to a designed thickness and the fiber prefabricated rod can be made to various rare earth ionic doped fibers by an ordinary drawbench technology.

本发明属于光纤制造和光纤激光技术领域，具体公开了一种利用溶胶凝胶方法中的DC-RTA技术制备稀土离子掺杂光纤预制棒的新工艺。该工艺步骤包括预先配制好含有所需掺杂离子的溶胶，将该溶胶均匀涂覆在石英玻璃管的内壁后高温灼烧，使之凝结并玻璃化为一层掺杂层。反复上述涂覆灼烧过程，在掺杂层达到设计厚度后由氢氧焰高温收棒形成光纤预制棒。该方法所得到的光纤预制棒可以通过普通拉丝工艺拉制成各类稀土离子掺杂光纤。

ZnO films naturally doped and codoped with N and Al are deposited by helicon wave plasma assisted sputtering method. Their photoluminescence properties have been studied at low temperature.

采用螺旋波等离子体辅助溅射技术制备了自然掺杂及N-Al共掺杂ZnO薄膜，对两种不同类型掺杂薄膜的低温光致发光特性进行了研究。

The study of acceptor Ga open-tube diffusion in SiO2/Si has been carried for several decades, whose pursuing was only to get the diffused surface of high uniformity and reproducibility and impurity distribution in Si which can improvethe electrical performance of the devices, but the various manifestation of Ga segregation effect at the SiO2-Si internal interface and the dynamic intendancy of the impurity concentration variability have not been reported.

关于受主杂质Ga在SiO_2／Si系统进行开管掺杂的研究已有几十年的历史，研究的内容与追求的目标主要集中在如何获得高均匀性、重复性的扩散表面和提高器件电学性能的硅体内杂质分布形式，而对Ga在SiO_2-Si内界面上分凝效应的各种表现，以及由此造成的近硅表面杂质浓度动态变化趋势尚未见报导。

The effects of doping concentration of iodine, doping time, doping temperature and exposure time on volume resistivity of anthracite were studied; and also the effects of solution concentration of cupric chloride, doping time, doping temperature, soking time of cupric chloride and exposure time on the volume resistivity were studied; Anthracitic resistivity has been decreased in dissimilar extent, and furthermore ,volume resistivity stability of the doping anthracite made by liquid phase doping method is more better than gas phase mothed; Resistivity and its stability were better than the doping method of iodine in fused salt doping method of cupric chloride.

研究了I_2掺杂浓度、掺杂时间、掺杂温度和暴空时间对无烟煤电阻率的影响；探讨了CuCl_2溶液的浓度、掺杂时间、掺杂温度和CuCl_2溶液浸泡放置时间以及暴空时间对无烟煤电阻率的影响：结果发现：I_2气相掺杂和液相掺杂均使无烟煤的电阻率有不同程度的降低，而液相掺杂法所得材料的电阻率稳定性更高；CuCl_2熔盐掺杂法所得材料的电阻率及其稳定性均优于I_2掺杂法。

In this research, we prepared Mo doped ZnO thin films on glass a substrate using co-sputtering to improve the conductivity of ZnO. The incorporated concentration of Mo atoms in ZnO was controlled by adjusting the aperture size of a shutter palaced in front of the Mo target. Textured morphology of ZnO film could be formed by attaching a metallic mask on the substrate.

本研究，欲以钼(Molybedeun， Mo)金属掺杂来提升氧ZnO薄膜之导电性，使用一般玻璃做为基板，利用射频溅射ZnO靶材及直流溅射Mo靶材进行共镀，Mo掺杂浓度是藉由钼靶前之挡板中的开口大小来控制，实验中改变基板温度(50℃、100℃、200℃、300℃)并进行镀膜后低压退火处理，藉此探讨Mo掺杂对於ZnO薄膜光电特性之影响，并找出最佳化制程参数。

Increased spin disorder and a decrease of with increasing Fe content are evident. It depopulates the hopping electrons and weakens the double exchange. From resistivity and magnetization data, it is expected that the addition of Fe can introduce grain boundaries and form antiferromagnetic clusters.

电阻率的峰值随着Fe的增加而增大，并且峰值对应的温度TIM向低温移动，随着外加磁场的增大电阻下降，产生MR效应，这是因为随着掺杂的增加，自旋无序增加，外场的增加抑制了自旋的扰动，在顺磁温区内，电子自旋形成了随机的磁结构，产生电子局域，破坏了极化子形成的环境，因此输运机制由绝热极化子输运转变为变程跳跃机制。

Sensing ability of PSS/PANI self-assembled film with different doping/dedoping structure to DMMP and CEES was investigated. Results demonstrate that the gas sensitivity of PSS/PANI self-assembled film is affected by the size of dopant counterions. Gas sensitivity of self-assembled film increases with increasing size of dopant counterions. It is found that sensing ability of PSS/PANI self-assembled film to DMMP increases significantly by redoping/dedoping EB-PSS/PANI film with sarin acid that has similar structure with DMMP.

首次考察了不同掺杂/脱掺杂结构的PSS/PANI自组装膜对化学战剂模拟剂DMMP和CEES的敏感性能，研究表明，掺杂酸对离子的尺寸大小对PSS/PANI自组装膜的气敏性有很大影响，较大的对离子尺寸有利于提高自组装膜的气敏性；并且发现采用与DMMP结构类似的沙林酸对EB-PSS/PANI自组装膜进行再掺杂-脱掺杂，能显著提高PSS/PANI自组装膜对DMMP的敏感性能。

On the basis of dopping carbon anode by soaking, the preparation of dopping solvent by mechanical mixing method and their electrocatalytic results are studied.

在原有的浸渍法掺杂碳阳极的基础上，全面考察了机械混合法掺杂碳阳极的掺杂剂制备和掺杂效果，并将其与浸渍法掺杂进行了比较。

The approaches taken to prepare NO releasing polymers are classified into three catogories:(1)doping discrete NO nonors within polymer matrix;(2)covalent attachment of NO resealing moieties on the filler particles of the polymer to provide NO releasing properties and then dispersion them into the polymer backbone;(3) covalent linkage of NO donors to polymer molecules.

制备可释放NO聚合物材料的方法主要有3种：（1）通过物理掺杂的方式将小分子的NO供体分散到聚合物材料中；（2）对聚合物材料的填料微粒进行化学改性，得到可释放NO的填料粒子，再将其填充到聚合物材料中；（3）通过共价键将可释放NO的基团连接到聚合物主链及侧链上。

In this paper,we calculate the electronic structures of the different concentration'phosphorus-d oped diamond and the density of states of phosphorus-doped diamond films which have a vacant lattice site by the first principle method.

为了更好的理解磷掺杂金刚石薄膜的成键机理，不同磷掺杂浓度对金刚石晶格的完整性及其电导率的影响，本文通过第一性原理的方法计算了不同磷掺杂浓度的金刚石晶格的电子结构和引进空位后磷掺杂金刚石薄膜的态密度。

It has been put forward that there exists single Ball point and double Ball points on the symmetrical connecting-rod curves of equilateral mechanisms.

从鲍尔点的形成原理出发，分析对称连杆曲线上鲍尔点的产生条件，提出等边机构的对称连杆曲线上有单鲍尔点和双鲍尔点。

The factory affiliated to the Group primarily manufactures multiple-purpose pincers, baking kits, knives, scissors, kitchenware, gardening tools and beauty care kits as well as other hardware tools, the annual production value of which reaches US$ 30 million dollars.

集团所属工厂主要生产多用钳、烤具、刀具、剪刀、厨具、花园工具、美容套等五金产品，年生产总值3000万美元，产品价廉物美、选料上乘、质量保证，深受国内外客户的青睐