掺杂的

In the research of prescription, through the experiments we knew the influence from the Nb_2O_5 or Y_2O_3 single donor doped on high-temperature PTC ceramic, and got the curve graph drawing the resistivity and mixing quantity. In order to restrain lead volatilize and mix the rang of donors to neutralization the harmful acceptor impurity in raw materials, adopt the prescription design of Nb_2O_5 and Y_2O_3 double donors-doped. From the result, we know that regulation proportion of Nb , Y double donors, can make high-temperature PTC ceramics semiconducting, the pottery demonstrates good electric performance.

为了能够更有效的抑制铅挥发，并且使掺杂范围能够更好的调节，以"中和"原材料中的有害受主杂质，在配方设计中采用了Nb_2O_5和Y_2O_3双施主掺杂的配方，由结果可知，适当的调节Nb、Y双施主掺杂总量及Nb、Y掺杂比例，可以使高温PTC陶瓷充分的半导化，陶瓷表现出良好的电性能。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

The deformed metal-SWNTs and metal-TCNTs can be transformed to semiconductor or insulator due to deformations resulting to variation of the atomic structure and the nearest-atom transfer integral having relation with the directions.Based on the Boltzmann transport equation and n - electronic energy dispersion relations for individual SWNTs, the theoretical model caculating the current and conductance of the SWNTs is deduced. The low-temperature conductances of undoping or doping SWNTs are studied numerically, the calculated results show that, for the doping SWNTs, the conductance is quantized, i.e.

我们从Boltzmann方程出发，并结合SWNTs的能量色散关系，导出了计算手性SWNTs电导或电流的理论模型，并分别对非掺杂和掺杂SWNTs的低温电导或电流进行数值计算，结果表明：对于非掺杂的SWNTs，其电导是量子化的，即电导随偏压或电子输运能量变化呈跃变的台阶式结构，这些结构随管径增大或温度升高变得不明显；对于掺杂SWNTs，当偏压为某些特定值V_i时，传导电流有跃变，且传导电流的大小、跃变周期及跃变幅度等不是完全由掺杂后的电子浓度决定的，而与管半径R及掺杂后Fermi能级附近的电子态密度有直接关系，随着温度的升高和管径的增大，跃变结构趋于平滑。

Doped high consistence Co can't increase the density of defect levels. ZnO doped Fe is different from doped Mn or Co totaly, the density of photoelectrons anddefect levels aren't reduced obviously. It's probably related the valence of Fe in crystal,general think trivalence of Fe, and form donor levels in ZnO.

Fe掺杂的ZnO完全不同于Mn、Co掺杂，其光生电子密度没有因掺杂出现明显的降低，即缺陷能级密度没有降低，这可能和掺入ZnO所呈现的价态有关，一般认为Fe为三价态，在ZnO中形成施主能级。

At first, Polyaniline was synthesized by the improved chemical oxidation technique, then, PANI/HCl, PANI/TSA and PANI/DBSA were obtained by doping emeraldine with HCl, 4-methyl benzene sulfonic acid and dodecylbenzene sulfonate acid, separately. Leucoemeraldine was obtained in the N-dimethylformamide by using phenylhydrazine deoxidizing emeraldine in N_2 atmosphere.

本文首先通过改进合成条件的化学氧化法合成了聚苯胺，经氨水脱掺杂获得本征态聚苯胺，再经盐酸、对甲苯磺酸、和十二烷基苯磺酸掺杂，分别获得到质子酸掺杂的聚苯胺样品，然后在N，N-二甲基甲酰胺中，利用苯肼，在N_2氛围下还原本征态聚苯胺得到还原态的聚苯胺。

The TC of doped samples is lower than that of undoped sample,whilethe resistivities of doped samples is two orders higher than that of the undoped sample.

在磁性上的直接反映就是，在掺杂样品的居里温度与未掺杂的样品相比有明显的下降，由此表现在输运特性上的变化就是掺杂样品的电阻率均出现了高达两个数量级的增加。

It can deliver a reversible capacity as high as 157 mAh/g at a discharging rate 0.1C at room temperature, even though the discharging current rate rise to 2C, it is able to deliver a capacity of 124 mAh/g. Temperature effects and overcharge behaviors are studied to versify its super thermodynamic stability. Another two doping manners, co-precipitation doping and spray doping, are also studied in this paper.

我们还进一步研究了不同掺杂方式对Li0.99Cu0.01FePO4电化学性能的影响，结果表明共沉淀掺杂是一条低含量离子掺杂的有效途径；喷雾法虽然也是一种很有应用前景的掺杂方式，但是尚有许多问题需要解决。

The coated article includes a glass substrate, a coating of an antimony doped tin oxide deposited on and adhering to the glass substrate and a coating of fluorine doped tin oxide deposited on and adhering to the surface of the coating of antimony doped tin oxide.

该涂敷制品包括玻璃底板、沉积和附着于该玻璃底板的锑掺杂的氧化锡涂层和沉积和附着于该锑掺杂的氧化锡涂层表面上的氟掺杂的氧化锡涂层。

Firstly, the incommensurate magnetic scattering of the doped single-layer triangular lattice in the normal state has been studied. It is shown that away from half-filling the commensurate peak is replaced by six incommensurate peaks located at [ (1-δ〓), ] , [ (1-δ′〓), ] , [ (1-δ"〓), ] , respectively, and 〓〓. The incommensurability parameter δ increases with doping at lower doping concentration, while saturates at higher dopings. These peaks broaden and weaken in amplitude with increasing energy and temperature, with the positions of the incommensurate peaks not changing with the energy.

利用t-J模型，讨论了单层和双层三角晶格材料的非公度磁散射，结果表明：随着掺杂的增加，三角晶格反铁磁体出现公度-非公度转变，即由一个公度峰变为六个非公度峰，并且非公度率在较低掺杂时随着掺杂浓度的增大而增大，在较高掺杂浓度时将达到饱和；虽然非公度峰的权重随着能量的增大而减小，但非公度峰的位置与能量无关，即非公度率是不随能量变化的，并且我们还发现非公度峰的权重随着温度的升高也是减小的。

Some preliminary studies on A_2BO_4 type oxides materials in therms of electrochemical properties have been reported. But there are seldom deep researches on electrochemical properties of doping in the A site of the A_2BO_4 type oxide.

有关未掺杂或B位掺杂的A_2BO_4型复合氧化物电化学性能已经有了一些报道，但对于A位掺杂的A_2BO_4型复合氧化物电化学性能研究鲜有报导。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。