掺杂半导体

Another object is to dope large area amorphous semiconductor materials to form an ohmic contact with a conducting substrate.

另一个目的是掺杂大面积的非晶半导体材料，与导电基片之间形成欧姆接触。

They include photosensitization of semiconductor by use of organic dyes, precious metal deposition, cation doping of TiO2 and coupling of two semiconductors with different energy levels.

详细介绍了用贵金属沉积、有机染料敏化、过渡离子掺杂、半导体耦合等方法对纳米TiO2进行修饰改性的研究现状，展望了纳米TiO2的光催化应用前景，指出了存在的问题和今后的研制方向。

Doping of silicon nanowire is one of effective means to manufacture silicon nanowire semi -conductor devices.

掺杂是制备硅纳米线半导体器件的一个有效手段。

The up-conversion properties of Er3+ in the oxyfluoride glass-ceramics codoped with Er3+ and Yb3+ were studied using the 960 nm semiconductor laser as a pumped source.

金杰用960 nm半导体激光器作泵浦源，研究了Er3+和Yb3+共掺杂的氟氧化物玻璃陶瓷中Er3+的上转换发光的性质。

This means that ion implantation is an effective doping method for polycrystalline diamond films to fabricate semiconductor devices.

这说明了离子注入是一种非常有效的多晶金刚石膜的掺杂手段用来制取半导体器件。

The hot-formation method for the preparation of the doped semiconducting oxide layer on the Ti substrate was studied.

研究了热形成法在钛表面制备掺杂的钛基氧化物半导体的方法。

For undoped sample 〓, a minimum of resistivity and semiconductor-like behavior present on the low-temperature side.

对未掺杂样品〓，低温下出现电阻率极小值和半导体型输运行为。

Simultaneously, the exports of ionization rate and nonionzed concentration are set up as a powerful tool for studying thoroughly the freeze-out effect. dN〓/dp and dN〓/dn are neglected in the linearized equation system of the iteration methods of Newton and Gummel, due to having lower 15 orders or more than dN〓/dn and dN〓/dp, thus the computing effort is cut down with no effect on precision. A new cut-off technique is adopted to accelerate the convergence speed, about twice reduced for Newton iteration method and six times or so for Gummel iteration method. The approximate formulae of Fermi-Dirac statistics are also put forward with simpler form and higher precision. 3. A term dependent on time is added to the electron and hole current succession equations respectively. It is only this model that conservation of charge in transient analysis and alternating small-signal analysis at low temperature can be kept by. 4. The performance of SE-PISCES is explained by the simulation example of PISCES-2B, diode.

研究了低温半导体器件模拟的数值方法：对载流子浓度进行了新的归一化；编制了不考虑掺杂所引进的内建电场时的电离率计算程序；由于低温杂质电离率随偏压状态而变化，为此编制了每次求解迭代时的电离浓度计算程序，并将其插入到求解迭代程序中；同时，设置了杂质电离率和未电离杂质浓度的出口点，为更深入地研究冻析效应提供了有力工具；在Newton迭代法和Gummel迭代法的线性化方程组中忽略了dN〓/dp、dN〓/dn，是因为它们比dN〓/dn、dN〓/dp低15个数量级以上，这样减小了计算量又不影响模拟精度；对Newton迭代法和Gummel迭代法采取了新的截断技术，提高了收敛速度，Newton法迭代法和两次左右，Gummel法减少六次左右；给出了表达式更简单而精度更高的Fermi-Dirac积分近似计算公式。

As to effects of 7 % Mn addition, post annealing and DMS layer thickness of Mn-doped LT-GaAs on their magnetic properties in three-layers structure LT-(Ga, MnAs /LT-GaAs/GaAs, the results show that the Curie temperature of DMS can be greatly increased by a decrease in thickness and via annealing treatment, and indicates the greatest Tc for (001) GaAs substrate orientation.

有关生长掺杂7 ﹪Mn，后退火处理和DMS厚度对的LT-As稀磁半导体，LT-(Ga， MnAs / LT-GaAs / GaAs三层结构磁性之研究。结果显示：DMS的居里温度随著膜厚度下降与退火处理，而大幅的上升，并且在GaAs(001)方向的基材具最高Tc。

UnlikeS andP, the delta-doping structure of MnxSi1-x only show enhanced ferromagnetic stabilization, while temperature shown HMF is lowered.

与S和P不同，delta掺杂使MnxSi1-x磁性半导体的铁磁稳定性提高但保持半金属铁磁性的使用温度降低。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。