掺杂半导体

It consists of a highly doped p-n semiconductor junction, which short circuits with negative bias and has negative resistance over part of its range when forward biased.

它是由重掺杂p_n半导体结组成，p_n 结会由于负偏压而短路，并且当加正向偏压时，在其适用范围它具有负电阻。

Keywords: rare-earth doped material; wide-gap semiconductor; III-nitride; laser radiation; plasma

中文关键词：稀土掺杂材料；宽能隙半导体；III族氮化物；激光辐射；等离子体

The optically active defect centers of such types as E', two kinds of oxygen-deficiency and some kinds of oxygen-richness in silica play an important role in optical communication fiber and UV absorption. The researches on some oxygen-deficient defects and the metal ions doped or implanted semiconductor nanoparticles with fine luminescence properties have made it possible for silica to be used in the lighting field.

氧化硅材料本征E'、2种缺氧型以及各种富氧型光活性缺陷中心在光导纤维及紫外吸收等应用中扮演了很重要的作用，某些具有良好发光性能的缺氧中心及掺杂离子或半导体纳米粒子发光中心的深入研究使氧化硅材料在照明领域具有良好的应用前景。

In the end the rule of electron transition is analysed.

关键词半导体ZnO掺杂第一原理计算

In chapter two and three, the effect of doping structures on the magnetism and energetics ofS andP based MSs was studied.

在第二章和第三章中，论文以S和P为主要研究对象系统探讨了锌氧族化合物和III-IV磁性半导体的掺杂磁性和热力学性质。

Controlled concentrations of specific donors or acceptors may be intentionally added into materials to form extrinsic semiconductor using various techniques.

控制特定施主和受主原子的浓度，进而运用各种方法能动地填加，这种在半导体材料中加入合金成分的过程称为掺杂。

As a result,room-temperature ferromagnetism of carbondoped ZnO could be derived in proper preparing conditions.

由此表明碳单掺杂的ZnO稀磁半导体在合适的制备条件下，可以得到室温铁磁性。

In order to improve electric conductivity of the ZnO n-type semiconductor, the proper metal of choosing to enhanced carrier concentration is a feasible and effective method.

为了获得较多的自由电子并增进n-type半导体的导电性，选择适当金属掺杂至氧化锌薄膜来增加载子数量是可行而有效的方法。

Phosphine(PH3)is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping,ion implement and chemical vapor deposition etc.

磷化氢在电子工业中主要用作外延硅半导体的一种n型掺杂剂，在化学气相沉积和离子注入中被用作一种磷源，在发光二极管用磷砷化镓膜的生产中也占有重要地位。

When the distance between microstructures is larger than 1μm, the influence of space charge is a negligible quantity, and the approximation of metal formula could be used.

研究了介观尺度下半导体表面空间电荷层对微结构间静电作用力的影响，并同宏观尺寸下采用的金属近似公式进行了比较，揭示了半导体表面空间电荷对静电作用力的影响同微结构间距离、材料掺杂浓度等因素的关系。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。