掺杂半导体

When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".

当半导体中加入了施主感受主杂质，我们就说该物质"掺杂"了。

Therefore, ion implantation is a well known method to adulterate semi-conductor and modify material surfaces as well, which has been widely used both in scientific and industrial fields.

因此，离子注入技术除用于半导体材料的掺杂外，还作为一种重要的材料表面改性手段，在科学技术和工业上得到广泛的应用。

Use semiconductor to adulterate to also can improve the smooth catalysis performance of TiO_2 film well, among them with SnO_2 effect best.

采用半导体掺杂也能很好地提高TiO_2薄膜的光催化性能，其中以SnO_2效果最好。

The thin-film transistor 30 may be formed so as to include an LDD structure in which a lightly doped region is provided on both sides of the cannel forming region 1b.

如示于图3、图3地，薄膜晶体管30，具备相对于岛状的半导体膜1a、形成有沟道形成区域1b、源区域1c、漏区域1d的结构，有时也形成为：具有在沟道形成区域1b的两侧具备低浓度区域的LDD(Lightly Doped Drain，轻掺杂漏)结构。

By way of yet another example, the "condition" is the presence of a particular dopant in a semiconductor that provides a low-mass electron as a charge carrier.

方式的又一个例子，"条件"是在场的某一掺杂在半导体提供了一个低质量的电子作为承运人负责。

In this Thesis,Ⅱ-Ⅵ semiconductor nanoclusters and doped nanoclusters were synthesized and their special photoluminescence properties were investigated in details.

本文在对半导体纳米晶的物理性质进行较为全面了解的基础上通过掺杂稀土离子来提高纳米颗粒的发光效率，为纳米晶材料的实用化提供实验依据。

Glass doped with semiconductor nano crystallites has been the focus of the photoelectron material science and technology for novel optical characteristics.

半导体纳米晶体掺杂的滤光玻璃由于具有良好的线性光学性质和显著的三阶非线性光学现象，近年来已成为光电子材料科学和技术所关注的焦点之一[1～ 3] 。

The invention discloses a p-type doped ZnO-based diluted magnetic semiconductor material and the preparation method.

本发明公开了一种p型掺杂ZnO基稀磁半导体材料及制备方法。

A gate insulating film is formed on the surface of a semiconductor substrate in an opening of a field insulating film, and thereafter a gate electrode and a capacitor lower electrode made of doped polysilicon or the like are formed on the insulating film.

本发明公开了一种半导体器件的制造方法。在场绝缘膜的开口中在半导体衬底的表面上形成栅极绝缘膜，且其后在绝缘膜上形成由掺杂的多晶硅等制成的栅电极和电容器下电极。

The unit also comprises a trench region which is located near the gate structure and in a portion of the semi-conductor underlay, a light dope source region/ drain region which is in the semi-conductor underlay to form spreading bag-shaped region below portion of the gate structure.

该器件还具有位于栅极结构附近内的半导体衬底的一部分内的沟道区域；以及半导体衬底中的轻度掺杂源极区域/漏极区域，以在部分栅极结构下方形成扩散的袋状区域。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。