掺杂半导体

It indicates that the PANI particles constituted films are ball like or ellipsoid like; the film takes on tertiary structure; HClO4 servers as both an acid medium and a dopant; the crystallizability of the film seems poor; the relationship between film thickness and acid concentration is not in linearity; the conductivity of the film is on a level with semiconductor, whose value depend more on film appearance than acidity of acid medium; the film starts dedoping at 67.3℃ and end at 277.2℃.

结果表明，构成薄膜的聚苯胺粒子呈球型或椭球型；薄膜具有三级结构特征；高氯酸不仅作为介质酸，同时作为掺杂剂；薄膜的结晶性能不佳；薄膜厚度与介质酸的浓度并非线性关系；薄膜的电导率处于半导体水平；电导率大小与无机介质酸的酸性强弱有一定关系，与表面形貌关系更为紧密；高氯酸掺杂聚苯胺薄膜在67.3℃时开始脱掺杂，在277.2℃脱除完全。

The first collector layer is made of a doped or undoped semiconductor in such a way as to contact the sub-collector region.

第一集电极层是由掺杂或未掺杂的半导体制成的，与副集电极区域接触。

Al and N with different concentrations are heavily doped in ZnO semiconductor,and the density of states of Al and N doped ZnO is calculated by DFT mothod under the condition of low temperature.

即在低温高掺杂氮和铝原子的条件下，ZnO半导体的电导率不仅与掺杂氮和铝原子浓度有关，而且和进入价带的相对空穴数有关。

The second collector layer is made of a doped or undoped semiconductor having a narrower band gap than the first collector layer in such a way as to contact the base region.

第二集电极层是由掺杂或未掺杂的半导体制成的，具有比第一集电极层窄的带隙，与基极区域接触。

So there is interest in developing magnetic semiconductors which will exhibit ferromagnetism.

当前研究稀磁半导体的主要方法是对半导体进行过渡元素的掺杂。

The calculated results revealed that the structural stability of SrTiO2 was weakened after In and Sc doping and that the partial substitution of In for Ti merely resulted in local structural changes around the dopant sites.

计算结果表明：掺杂后，SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3的稳定性降低，体系显示p型简并半导体特征，掺杂仅引起杂质原子近邻区域的几何结构发生变化。

The results show that both pure andⅠ-doped complex aresemiconductor, the pure complex, and are insulator.

测定了三种配位聚合物及碘掺杂的配位聚合物的电导率，发现配位聚合物碘掺杂前后都表现为半导体，配位聚合物、和表现为绝缘体。

Secondly, the energy band structure of codoped-TiO2 shows that an acceptor level and a donor level present inside the band gap, and an electron on the donor level passivates a hole on the acceptor level, so the systems still keep semiconductor character and enhance the separation of electron-hole pairs excited by photo irradiation.

另外， V： N共掺杂TiO2的能带结构表明：导带底下方施主杂质能级上的一个电子刚好补偿价带顶上方受主杂质能级上的一个空穴，使掺杂后TiO2材料表现出半导体的显著特征，这有利于电子—空穴对的分离，提高量子产率。

It is an effective way to use the appropriate narrow bandgap nanosize semiconductors that is stable in chemical and biochemical conditions and not pollute the surroundings in reaction, which sensitizes nanocrysalline titanium dioxide carriers synchronously to prompt the utilization of the solar spectra and the efficiency of photocatalysis.

利用染料分子作表面敏化半导体材料和利用杂质掺杂来实现宽禁带半导体吸收光谱的扩展有一定的局限性，采用化学和生物惰性且对环境不产生二次污染的窄禁带半导体敏化同时考虑团簇颗粒粒径对载体性能的影响，是提高纳米二氧化钛光催化剂对阳光的吸收利用率和量子效率的有效方法。

Then, by the relationship between the heat conductivity and the impurity concentration, the concentration distribution can be ontained.

进而可以据热导率和掺杂浓度的关系，得到半导体中掺杂浓度的分布。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。