掺杂

Ceramics. such as doped rare-earth manganites exhibit extremely high values for this effect.

陶瓷。例如这个作用的被掺杂的稀土元素水锰矿展览极端上限值。

Nowadays, it has been extensively accepted that the double exchange interaction plays a key role in perovskite manganites. Therefore, in this thesis the effect of the double exchange is studied by doping on Mn sites.

目前，普遍认为双交换作用对钙钛矿结构氧化物中存在的CMR效应起到非常重要的作用，因而本论文通过对Mn位的元素替代来考察掺杂后对双交换作用的影响。

The photocatalytic activities of TiO2 nanopowders co-doped with Eu(superscript 3+) and Y(superscript 3+) were tested for degradation of methyl blue solutions.

以甲基蓝溶液为目标污染物，考察了Eu(上标 3+)和Y(上标 3+)双稀土离子共掺杂TiO2纳米粉体的光催化活性。

The measures for reducing thermal conductivity were shown in the thesis through the analysis of the mathematical model of thermal conductivity, including: addition of dopant atoms, increasing porosity and minishing coating thickness.

通过分析导热系数的数学模型，分别从添加掺杂物、孔隙率和涂层厚度的角度提出了降低导热系数的方法。

As-sintered high activity mischmetal doped WC-8%Co-0.07%RE cemented carbide inserts were tested for the turning of cast iron.

考察了高活性混合稀土掺杂的WC-8%Co-0.07%RE硬质合金刀片对铸铁的切削试验。

The performances of the hydrogen storage electrode MmNi3.5Mn0.4Co0.7Al 0.4(Mm: mischmetal) modified by mixing it with Fe3O4 and Cr2O3 were studied.

研究了掺杂金属氧化物Fe3O4和Cr2O3贮氢电极MmNi3.5Mn0.4Co0.7Al0.4的电化学性能。

As to effects of 7 % Mn addition, post annealing and DMS layer thickness of Mn-doped LT-GaAs on their magnetic properties in three-layers structure LT-(Ga, MnAs /LT-GaAs/GaAs, the results show that the Curie temperature of DMS can be greatly increased by a decrease in thickness and via annealing treatment, and indicates the greatest Tc for (001) GaAs substrate orientation.

有关生长掺杂7 ﹪Mn，后退火处理和DMS厚度对的LT-As稀磁半导体，LT-(Ga， MnAs / LT-GaAs / GaAs三层结构磁性之研究。结果显示：DMS的居里温度随著膜厚度下降与退火处理，而大幅的上升，并且在GaAs(001)方向的基材具最高Tc。

The Hall mobilities of SiGeC films were larger than those of SiGe layers.

发现SPE生长的非故意掺杂样品表现为p型导电特征。

See also Nozaki et al.,"A 1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application," IEEE Journal of Solid-State Circuits, Vol. 26, No. 4, April 1991, pp. 497-501, which describes a similar element in a split-gate configuration where a doped polysilicon gate extends over a portion of the memory element channel to form a separate select transistor.

还参见Nozaki等人的&A1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application&(IEEE Journal of Solid-State Circuits，第26卷，第4期，1991年4月，497-501页)，其描述了处于分裂栅极配置中的类似元件，其中掺杂的多晶硅栅极在存储器元件沟道的一部分上延伸以形成单独的选择晶体管。

A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.

采用 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区研制出了一种抗辐射加固功率器件—— VDMNOS-FET (垂直双扩散金属-氮化物-氧化物-半导体场效应晶体管)。

With Death guitarist Schuldiner adopting vocal duties, the band made a major impact on the scene.

随着死亡的吉他手Schuldiner接受主唱的职务，乐队在现实中树立了重要的影响。

But he could still end up breakfasting on Swiss-government issue muesli because all six are accused of nicking around 45 million pounds they should have paid to FIFA.

不过他最后仍有可能沦为瑞士政府&议事餐桌&上的一道早餐，因为这所有六个人都被指控把本应支付给国际足联的大约4500万英镑骗了个精光。