掺杂

It is found that the orthorhombic structure with interlacingdoping type is the most stable structure.

对x＝0.5掺杂化合物，做了结构优化，发现具有交错掺杂类型的正交结构比菱形结构更稳定。

Through the calculating of doping materials, we can see electrons are easy to transation or transfer, which strengthens the conduction properties of materials. Especially the stability of materials doping with Mn or Al is more strong, and the ionizing energy is more lower. These indicate that the electrons in the outest orbit are easier to lose, that is to say the Li+ ions are easier to imbed into materials. The discharge voltage of material doping with Co decreases, the oxidization of electrolyte is more difficult, and the cycling performance is improved.

通过对掺杂材料的计算可见掺杂后电子更容易跃迁或转移，增强了材料的导电性能，其中掺锰和掺铝的材料稳定性更强，电离能降低，说明失去最外层电子更容易，也就是说锂离子在材料中嵌入和脱出更加容易；掺钴之后材料的放电电压降低，电解液氧化的可能性减小，循环性能得到改善。

The parabola equation that can be fixed to the test curve and has reliable physical meaning was given.

该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系，进而得到了一个最佳掺杂含量的表达式。

The technology of the invention can effectively control the growth of the GaMnN materials to obtain GaN Mn-doped thin-film materials. According to research, the intrinsic magnetism of the Mn-doped GaN is paramagnetism.

本发明可有效地控制GaMnN材料的生长，获得高质量的Mn掺杂的GaN薄膜材料，研究发现Mn掺杂的GaN的本征磁性为顺磁性。

The calculated results revealed that the structural stability of SrTiO2 was weakened after In and Sc doping and that the partial substitution of In for Ti merely resulted in local structural changes around the dopant sites.

计算结果表明：掺杂后，SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3的稳定性降低，体系显示p型简并半导体特征，掺杂仅引起杂质原子近邻区域的几何结构发生变化。

The activity of photocatalyst doped by coprecipitation is higher than that of by mechanical blend.

而其中钴掺杂光催化剂的活性又优于铈掺杂光催化剂。

The signal height and decay time of the transient photoconductivity as the function of the iridium dopant concentration are studied at 77K.

研究在 77K时，铱掺杂溴化银微晶瞬态光电导的信号强度和衰减时间与铱掺杂浓度间的关系。

Following are summary of our works:(1)The powders of LaCr_(0.9)Co_(0.1)O_3, LaCr_(0.9)Fe_(0.1)O_3, LaCr_(0.9)Ni_(0.1)O_3, LaCr_(0.95)Sn_(0.05)O_3 and LaCr_(1-x)Ti_xO_3(x=0.0-0.3) were single perovskite phase with orthorhombic structure. The gas-sensing properties of their thick film sensors were tested in the acetone, ethanol, normal propyl alcohol, carbinol and formaldehyde organic gases. The sensitivity of the sensors can not be enhanced effectively by doping Co、Fe、Ni、Sn elements in B-site of LaCrO_3. Ti dopant with proper concentration can greatly improve the gas-sensing properties, which make the sensor display higher sensitivity and quicker response-recovery characteristics.

所得结果摘要如下：(1)LaCr_(0.9)Co_(0.1)O_3、LaCr_(0.9)Fe_(0.1)O_3、LaCr_(0.9)Ni_(0.1)O_3、LaCr_(0.95)Sn_(0.05)O_3和LaCr_(1-x)Ti_xO(来源：ABfd1dC论文网www.abclunwen.com)_3(x=0.0-0.3)粉体为正交单相钙钛矿结构，其厚膜型气敏元件在350℃时对丙酮、乙醇、正丙醇、甲醇、甲醛等有机气体的气敏性能测试表明：0.1mol Co、Fe、Ni和0.05mol Sn元素在LaCrO_3的B位进行掺杂后，不能有效提高材料对以上测试气体的气敏性能；而Ti元素的适量掺杂可以极大地改善LaCrO_3的气敏性能，使之显示出对丙酮气体的高灵敏度和快速响应恢复能力。

The results show that both pure andⅠ-doped complex aresemiconductor, the pure complex, and are insulator.

测定了三种配位聚合物及碘掺杂的配位聚合物的电导率，发现配位聚合物碘掺杂前后都表现为半导体，配位聚合物、和表现为绝缘体。

The Eu 〓·phen was also incorporated in TiO〓 by sol-gel method, it could be found that no fluorescence quench was observed under the chosen concentration ranges and the fluorescence lifetime were longer than the pure complex.

本文中还通过溶胶凝胶法将Eu〓·phen掺入TiO〓基体中，通过荧光光谱的研究表明在所选择的掺杂范围内没有出现荧光猝灭，且荧光寿命比掺杂前的纯配合物延长。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。