掺杂

The result shows that the main factors,which affect the technical quality of the cathode assembly preparation,are surface oxidization of emissive layer,impurity pollution,doped concentration nonuniform,less variation of doped concentration gradient,the sticking stress of GaAs and glass,and the main factors,which affect the cathode activation,are the degree of vacuum for activation at lower than 8x10-8Pa,the partial pressure of H2O,CO,CO2 and C in the vacuum residial gas at higher than 10-8 Pa and the improper caesium and oxygen refining.

结果表明，影响台外工艺质量的主要因素是外延材料缺陷多、发射层表面氧化、杂质污染、掺杂浓度不均匀、掺杂浓度陡度变化小及GaAs与玻璃粘接产生的应力大；影响台内工艺质量的主要因素为阴极激活真空度低于8×10-8Pa。真空残气H2O.CO.CO2及C分压大于10-8Pa。阴极激活铯和氧源提纯不彻底。

We find that the microwave absorption properties of both kinds of ferrite change as different amount of rare earth cerium doped.

然后对两个体系分别掺杂不同微量的稀土元素铈，发现两个体系的微波吸收特性随掺杂铈的量的不同而改变。

Using the formula of the material's conductibility, it is proved that there rxists the optimum content of Sb in ATO.

从材料的电导率公式出发，定性分析了二氧化锡中掺杂锑的含量存在理论最佳值，根据已有模型计算证明了锑掺杂二氧化锡电导率存在理论上限。

The first collector layer is made of a doped or undoped semiconductor in such a way as to contact the sub-collector region.

第一集电极层是由掺杂或未掺杂的半导体制成的，与副集电极区域接触。

Al and N with different concentrations are heavily doped in ZnO semiconductor,and the density of states of Al and N doped ZnO is calculated by DFT mothod under the condition of low temperature.

即在低温高掺杂氮和铝原子的条件下，ZnO半导体的电导率不仅与掺杂氮和铝原子浓度有关，而且和进入价带的相对空穴数有关。

The second collector layer is made of a doped or undoped semiconductor having a narrower band gap than the first collector layer in such a way as to contact the base region.

第二集电极层是由掺杂或未掺杂的半导体制成的，具有比第一集电极层窄的带隙，与基极区域接触。

In this paper, the factors influencing the luminescence properties and luminescence quantum efficiency of doped ZnS nanoparticles are discussed, and recent developments with preparation and applications of doped ZnS semiconductor nanoparticle materials are reviewed.

本文讨论了影响掺杂ZnS纳米粒子发光性能和量子产率的因素，综述了掺杂ZnS纳米材料制备及其应用的研究进展。

In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.

在一些实施方案中，渐变半导体缓冲层位于隐埋氧化物层下面，而在其他实施方案中，包含掺杂有B或C中至少一种的Si的掺杂半导体层位于隐埋氧化物层下面。

We study the field enhancements in the waveguide structures by doped semiconductor material, and analyze their electromagnetic fields for different structures under the plane wave illumination or the short pulse. We design several doped silicon slots cavity and slot chains with large field enhancement, and describe their physical mechanism.

我们研究掺杂半导体波导结构对兆赫波电磁场增益之影响，使用电磁模拟针对不同结构做探讨，并分析连续波和脉冲波之电磁场变化，设计具有强场增益之掺杂半导体的矽狭缝和矽狭缝链之结构，并探讨其物理机制。

Thus vapor doping method is a new and effective method.

因而，蒸汽掺杂是一种新型高效的掺杂方法。

With Death guitarist Schuldiner adopting vocal duties, the band made a major impact on the scene.

随着死亡的吉他手Schuldiner接受主唱的职务，乐队在现实中树立了重要的影响。

But he could still end up breakfasting on Swiss-government issue muesli because all six are accused of nicking around 45 million pounds they should have paid to FIFA.

不过他最后仍有可能沦为瑞士政府&议事餐桌&上的一道早餐，因为这所有六个人都被指控把本应支付给国际足联的大约4500万英镑骗了个精光。