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The results show that the Mn-doped GaN films grown by HVPE have the ferromagnetism even at the room temperature.

测试结果表明使用HVPE方法生长的Mn掺杂GaN薄膜具有室温铁磁性。

In this work, the electronic structure and the stability ferromagnetism of C-doped ZnO are studied by first-principles calculations and Monte Carlo simulation.

本文利用第一性原理计算得到C掺杂ZnO的电子结构,发现系统具有半金属的电子结构。

It is shown that Zn0.75Co0.25O films grown at low temperatures (250 ~ 350 ℃) are of single-phase wurtzite structure and films synthesized at 300 or 350℃ reveal room temperature ferromagnetism.

第五章研究了生长温度对Co掺杂的ZnO DMS薄膜性能的影响。300℃与350℃条件下生长的薄膜显示出铁磁性。

The effects of the silicon nanowire length, width and doping concentration on I-V characteristics of silicon nanowire field effect transistor are also discussed.

矽奈米线的长度与宽度以及掺杂浓度均会对矽奈米线场效电晶体的I-V特性产生影响,其影响的机制与结果也会有合理的解释与分析。

With different sintering conditions, the effect of the luminescent intensity due to sintering temperature and the concentration of activator would be discussed by the X-Ray Diffraction, photoluminescence spectrometer and Field Emission Gun Transmission Electron Microscope.

并在不同的烧结条件下探讨锻烧温度、掺杂活化离子浓度对萤光发光强度的影响。

A gate insulating film is formed on the surface of a semiconductor substrate in an opening of a field insulating film, and thereafter a gate electrode and a capacitor lower electrode made of doped polysilicon or the like are formed on the insulating film.

本发明公开了一种半导体器件的制造方法。在场绝缘膜的开口中在半导体衬底的表面上形成栅极绝缘膜,且其后在绝缘膜上形成由掺杂的多晶硅等制成的栅电极和电容器下电极。

In addition, fluorescence lifetime of some complexes has been investigated.

本文还讨论了中性配体和掺杂离子对其荧光性质的影响。

Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration.

实验结果显示元件的电特性和均匀度可藉由掺杂适量的氟原子达到明显的改善。

If equally high electronic conductivity can be introduced into fluorite matrix, They will be applied in oxygen membrane.

如果在较低的温度(600℃-800℃)工作,同时能够有效抑制电子导电的贡献,并保持高离子导电率,则CeO〓基材料可作为中温SOFC的固体电解质材料,所以在CeO〓基掺杂稀土离子的研究具有重要的意义。

Transparent Er3+/Yb3+ co-doped lead fluosilicate glass ceramics is prepared, which contains nano crystalline with size of 10-12 nm.

制备了微晶体尺寸大约在10-12nm范围内的Er3+,Yb3+共掺杂透明氟硅铅酸盐微晶玻璃。

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呼气,收缩臀部肌肉;拱起身体,尽量抬起头来,右腿伸直朝向天花板(膝微屈,以避免肌肉紧张)。

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