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Said lead tungstate crystal comprises tungsten oxide, lead monoxide, ytterbium oxide and zinc oxide; the molar ratio between tungsten oxide and lead monoxide is 1: 1, the doping amount of ytterbium oxide is 50 -300 ppm of the total weight of tungsten oxide and lead monoxide, the doping amount of zinc oxide is 50 -1050 ppm of the total weight of tungsten oxide and lead monoxide.

Yb和Zn双掺杂钨酸铅晶体由氧化钨、氧化铅、氧化镱和氧化锌制成;氧化钨与氧化铅的摩尔比为1∶1,氧化镱的掺杂量为氧化钨和氧化铅总质量的50~300ppm,氧化锌的掺杂量为氧化钨和氧化铅总质量的50~1050ppm。

According to the radius of doping metal ions and lattice parameter of doping samples, it was confirmed that doping metal ions replaced the Mn〓 of spinel LiMn〓O〓.

根据掺杂阳离子的半径和掺杂对尖晶石LiMn〓O〓晶格常数的影响规律确定了掺杂阳离子是进入到原来Mn〓占据的位置。

After comparing with the thermal conductivity under two different conditions, the thermal conductivity with vacancy is lower than that with Kr, which accounts for phonon scattering on impurities due to lattice strain is stronger than that due to differences in mass between the defect and the surrounding matrix.

模拟结果显示,温度在20~80K之间,考虑热膨胀时的导热系数比晶格常数固定时的值要低,但随温度变化的关系更加接近实验值时的情况;比较固体氩中不同掺杂时导热系数大小,发现同样掺杂浓度条件下,掺空穴时材料导热系数比掺氪时低,说明掺杂时由于晶格不匹配引起的声子散射比不同质量引起的散射更重要。

Cu doped ZnO thin film can detect 100 ppb propyl alcohol vapor, while Mn doped ZnO thin film exhibits high sensitivity to NH3 and H2O vapor.Furthermore, the photoluminescence properties of ZnO and Tb doped ZnO thin films, heat-treated in different atmospheres, were carried out.

薄膜气敏性研究表明,Ti的掺杂使ZnO膜电阻降低;Cu的掺杂使薄膜对正丙醇的选择性增高,可检测痕量(100 ppb)的正丙醇:Mn掺杂薄膜显示出很好的氨敏和湿敏性能。

The thermionic emission properties of rare earth doped molybdenum cathode and impregnatedcathode with sub-micron scandia doped tungsten matrix, and the secondary emission property of rare earth dopedmolybdenum cathode have been studied in this paper.

稀土掺杂钼热阴极发射特性和浸渍与亚微米斯坎迪亚掺杂钨阴极基体,以及稀土掺杂二级排放特性钼阴极进行了研究,在此文件。

It showed that the La stoichiometric number X has obvious impact on the structure and the CV curves; the structure was attected by the synthesis temperature and Nd stoichiometric number X; By the EIS curves of the different potential, it showed that the resistance decreased with the increase of the potential in the doping thulium elements Nd experiment.

稀土掺杂结果表明,La的掺杂量对材料结构和循环伏安曲线有明显影响;反应温度和Nd的掺杂量对材料结构有影响;不同电势下材料的掺Nd材料的交流阻抗图谱表明,随着电势的升高,体系的电阻减小。

Doped high consistence Co can't increase the density of defect levels. ZnO doped Fe is different from doped Mn or Co totaly, the density of photoelectrons anddefect levels aren't reduced obviously. It's probably related the valence of Fe in crystal,general think trivalence of Fe, and form donor levels in ZnO.

Fe掺杂的ZnO完全不同于Mn、Co掺杂,其光生电子密度没有因掺杂出现明显的降低,即缺陷能级密度没有降低,这可能和掺入ZnO所呈现的价态有关,一般认为Fe为三价态,在ZnO中形成施主能级。

The emeraldine salts (ES1) of polyaniline were synthesized by emulsion polymerization with different dopants at 0℃.

另外,以DBSA、HCl及H3PO4为共掺杂酸,於室温下,藉二次掺杂制备含不同掺杂酸结构之聚苯胺(ES2)。

At first, Polyaniline was synthesized by the improved chemical oxidation technique, then, PANI/HCl, PANI/TSA and PANI/DBSA were obtained by doping emeraldine with HCl, 4-methyl benzene sulfonic acid and dodecylbenzene sulfonate acid, separately. Leucoemeraldine was obtained in the N-dimethylformamide by using phenylhydrazine deoxidizing emeraldine in N_2 atmosphere.

本文首先通过改进合成条件的化学氧化法合成了聚苯胺,经氨水脱掺杂获得本征态聚苯胺,再经盐酸、对甲苯磺酸、和十二烷基苯磺酸掺杂,分别获得到质子酸掺杂的聚苯胺样品,然后在N,N-二甲基甲酰胺中,利用苯肼,在N_2氛围下还原本征态聚苯胺得到还原态的聚苯胺。

Also the phase transition temperature from hexagonal ZnTiO_3 phase to cubic Zn_2TiO_4 was lowed by adding V_2O_5. It was noticed that V enriched in the boundary of the exaggerated grains, while not be detected in the inner of exaggerated grains or in the boundary of small grains. At sintering temperature 50℃, orthotitanate phase Zn_2TiO_4 in zinc titanate ceramics with ≤1.00wt% WO_3 additions became major phase, while zinc metatitanate ZnTiO_3 became major phase with ≤1.00wt% WO_3 additions.

结果表明:单独掺杂V_2O_5和WO_3有效降低了陶瓷烧结温度,900℃烧结的掺杂0.75wt%V_2O_5钛酸锌陶瓷密度可达理论密度的96.1%,930℃烧结的掺杂3.00wt%WO_3钛酸锌陶瓷的密度达理论密度的95.2%;V_2O_5的添加使六方相ZnTiO_3的分解温度从900℃降到了850℃以下,V_2O_5富积于陶瓷体的晶界处,在V_2O_5富积区附近产生了异常长大的晶粒。

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另一方面,更重要的是由于城市住房是一种异质性产品。

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You rap, you know we are not so good at rapping, huh?

你唱吧,你也知道我们并不那么擅长说唱,对吧?