异质的

The characteristics of pentacene/perylene derivatives based organic solar cells are investigated in this thesis Donor and acceptor layers are pentacene and N N'-dioctyl-3 4 9 10-perylenetetracarboxylic diimide (PTCDI-2~13C) respectively Twelve organic solar cells with pentacene/PTCDI-2~13C heterojunctions were fabricated to study the influence of various alkylic perylene derivatives on the power conversion efficiency Under the sunlight simulator with AM1 5G filter and 100 mW/cm2 the solar cell of pentacene/PTCDI-7C heterojunction with cathode of Ag/Al bilayer has the best performance among the devices with pentacene/PTCDI-2~13C heterojunctions In PL spectrum analyses the pentacene/PTCDI-7C film had lower recombination rate than the other pentacene/PTCDI-2~13C films; therefore more excitons could reach the P/N junction and enhance short-circuit current Furthermore the PTCDI-7C film grown on the surface of penatcene was more matched than other PTCDI films analyzed by the PL peak shifts of 10 nm and 45 nm thick PTCDI-2~13C and images of atomic force microscope More lattice match between the films of pentacene and PTCDI resulted in fewer defects in P/N junction and more carries can reach electrodes Accordingly the power conversion efficiency approach 2% was obtained from the solar cell with the active layer of pentacene/PTCDI-7C

本研究探讨以五环素/骈苯衍生物异质接面太阳能电池之特性，利用pentacene作为电子施体有机材料，PTCDI -2C~13C作为电子受体有机材料，制作出异质接面为pentacene/ PTCDI-2C ~13C等12种有机太阳能电池，比较不同碳数的骈苯衍生物对於有机太阳能电池之光电转换效率之影响。在AM1 5G、100 mW/cm2的模拟太阳光下，以pentacene/PTCDI-7C异质接面太阳能电池具有短路电流9 882 mA/cm2、开路电压0 376 V、填充因数0 523及光电转换效率达1 945%，皆比其他pentacene/PTCDI-2C ~13C异质接面太阳能电池来的大。由薄膜分析可知PTCDI-7C在这12种太阳能电池中具有较低的电子电洞复合发光效率，可以让较多激子到达异质接面进行电荷分离，减少电子电洞对复合发光的机率；此外，由光激发萤光光谱之峰值位移配合原子力显微镜表面结构图，可以得知当PTCDI-7C成长在pentacene上时会顺著pentacene的结构成长薄膜，故较无缺陷产生在P/N接面处；而在其他结构下则无此现象产生，致使在pentacene/PTCDI-7C薄膜中的载子有较大的机会可以移动至电极，使光电流提高，进而使光电转换效率提高。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

In this study, AlGaN/GaN hetero-junction photo-transistors in detecting ultraviolet spectra have been fabricated and characterized. One of the HPTs features as low-temperature grown GaN insertion layer between based and emitter layers to reduce dark current. The internal gain and response time are also studied for the HPTs with and without the LT-GaN layer.

中文摘要本论文针对氮化镓/氮化铝镓系列异质接面光电晶体作为紫外光波段侦测器之相关制作与研究，包括於磊晶结构中有无插入一层低温成长氮化镓层之两种异质接面光电晶体，并比较其元件讯号放大效果以及响应时间的改变。

In order to know the character of them,the contact between them and the crack, and their forming process,we designed a special experiment- prefabricate crack in the shaped blank.

为了弄清此类异质颗粒的性质及其与裂纹之间的联系，以及具有该相同特征的裂纹组织的形成过程，特设计预制裂纹实验方案进行验证，通过试验研究，发现了异质颗粒的性质及其与裂纹之间的联系，判断出具有该相同特征的裂纹组织的形成过程，总结出了影响异质颗粒形成及大小的主要因素。

Theeffective size of populations under maximum negative or positive assortive mating is larger thanrandom mating of selected parents.

同质和异质选配情况下，群体有效大小较选择的亲本随机交配要大，特别是异质选配。因此，采用异质选配，可以使选育与保种有机地结合起来。

In this thesis, we design and implement a Heterogeneous network Integration Support Node for the integration of heterogeneous wireless networks integration. Then, we propose a distributed HISN network architecture.

在这篇论文中，我们设计并实作了一异质网路整合支援节点用以整合异质网路，此外我们并提出了分散式的HISN网路架构。

Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors; heterojunction field effect transistors and bipolar transistors; photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

主要内容包括：化合物半导体的特性、制备与制程；异质接面、量子结构和假晶应变层的理论与实际应用；金属半导体接面场效电晶体；异质接面场效电晶体以及异质接面双极电晶体；检光二极体、垂直和平面共振腔镭射二极体、以及其他光电元件。

Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors; heterojunction field effect transistors and bipolar transistors; photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

主要内容包括：化合物半导体的特性、制备与制程；异质接面、量子结构和假晶应变层的理论与实际应用；金属半导体接面场效电晶体；异质接面场效电晶体以及异质接面双极电晶体；检光二极体、垂直和平面共振腔雷射二极体、以及其他光电元件。

It was suggested that one of the radical reasons resulting in microspore abortion of alloplasms was the disorder between nucleus and cytoplasm, which caused unbalance of enzymatic metabolism, decrease of activities of SOD and CAT, and damage of membrane systems led by accumulated active oxygen.

异质系核质关系不协调，酶代谢失调，SOD、CAT活性下降，活性氧积累导致膜系统损伤，可能是异质系花粉败育的根本原因之一。

Translator are used as cognates; and so on.

这一事实说明了异质在中华文明中富有影响的形象，也就是说，当时并不认为异质非常重要。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。