射频

InNSb alloy films were prepared on GaAs (001) substrates by N2 radio frequency plasma-assisted molecular beam epitaxy, the N composition and micro-structures of the samples were characterized by atom force microscopy, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

本文利用射频氮等离子辅助分子束外延（RF-MBE技术在GaAs（001）衬底上生长稀氮InNSb半导体薄膜，并通过原子力显微镜、电子扫描显微镜、X射线衍射仪、拉曼散射光谱等测量手段对样品的微结构和氮组分等进行了表征。

In the meanwhile, we summarized the inspective methods and principles of the DLC: N films such as Raman spectrum, X-ray photoelectron spectrum, infrared absorption spectrum, atomic force microscope, scanning electron microscope.

第三章介绍了射频磁控溅射方法制备薄膜的步骤及设备操作的步骤，并制备了DLC薄膜及DLC：N薄膜，对其成分和结构进行了对比。

Undoped and indium-doped zinc oxide films are deposited on Si substrates by radio frequency reactive sputtering technology.

采用射频反应溅射技术在硅(100)衬底上制备了未掺杂和掺In的ZnO薄膜。

The preparation of AIN thin films has been carried out by chemical vapor deposition , reactive sputtering deposition and pulsed-laser ablating deposition etc.

当前制备AIN薄膜的方法主要有化学气相沉积法、有机化合物气相沉积法、射频溅射法和激光脉冲熔融沉积法等，但所有的这些方法都有各自的不足。

Single-crystalline GaN nanowires have been synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900 °C in a quartz tube.

中文摘要：采用射频磁控溅射技术在硅衬底上制备Ga2O3/Nb薄膜，然后在900 °C下于流动的氨气中进行氨化制备GaN纳米线。

A dual modulus PLL synthesizer is adopted to produce the radio-frequency generator operating between 38MHz and 150MHz, which is power amplified to drive the acousto-optic tunable filter to implement wavelength scanning of diffracting beam.

射频信号源采用双模锁相环频率合成技术，实现了在38MHz-150MHz范围内的频率输出，其经功率放大电路后驱动AOTF来实现衍射光的波长扫描控制。

Preparation and microstructure GAMs were successfully embedded in SiO〓 thin film by magnetron r. f. cosputtering technique. The microstructure of thin films were characterized by XRD and TEM.

一、薄膜的制备和显微结构采用射频磁控共溅射法成功地制备了GaAs颗粒均匀地弥散在SiO〓介质中的薄膜，薄膜中GaAs颗粒所占的体积分数高达15％以上，GaAs颗粒的平均直径为纳米量级。

ZnO polycrystalline films, with a preferred orientation in c-axis, were grown by RF magnetron sputtering at reran temperature on quartz substrate.

用射频磁控溅射方法在未进行人为加热的石英玻璃衬底上，生长了良好c轴择优取向的ZnO多晶薄膜。

In our experiments, the hafnium films were deposited on molybdenum substrates by radio frequency magnetron sputtering technology, and the barium oxide layers were prepared by the chemical method to simulate the grid structure of traveling wave tubes. Then, the surface phase and compositional change in the grid was studied under high temperature by annealing from 900K to BOOK, which can be used in explaining the suppression mechanism of hafnium film.

实验中，利用射频磁控溅射技术在Mo基底上制备了Hf膜，并利用化学方法制备了BaO涂层以模拟行波管栅极结构，随后在N_2保护下，通过在900K到1300K范围内退火，研究栅极处于高温工作环境下表面相结构和成分的变化，以此解释了Hf薄膜抑制栅极电子发射的工作机理。

Cerium dioxide thin films were deposited on glass substrates using R. F. magnetron sputtering.

本文采用射频磁控溅射法在玻璃基片上沉积CeO2薄膜。

Finally, according to market conditions and market products this article paper analyzes the trends in the development of camera technology, and designs a color night vision camera.

最后根据市场情况和市面上产品的情况分析了摄像机技术的发展趋势，并设计了一款彩色夜视摄像机。

Only person height weeds and the fierce looks stone idles were there.

只有半人深的荒草和龇牙咧嘴的神像。