射频

Comparing to single rf source CCP, ion flux and electron flux will be influenced by both of the sources in the dually rf driven CCP. Therefore, particles in plasma behave more complicated.

与单频电容耦合放电相比，在双频电容耦合放电等离子体中的离子和电子受到的是两个不同频率的射频偏压的调制，从而使等离子体表现出更为复杂的运动行为。

In this thesis several magnetic multilayers(Co/Pb,Fe/Si,and NiCo/Cu)were prepared by rf sputtering,the structure and magneticproperties were studied by using x-ray diffraction,vibrating samplemagnetometer,torquemeter,ferromagnetic resonance,magnetoresistanceand magnetooptical Kerr effect.

本文对用磁控射频溅射方法制备的Co/Pb，Fe/Si，NiCo/Cu等三个系列的磁性多层膜样品的结构和磁性，层间耦合与磁光效应的关联进行了系统的研究。研究中使用了X射线衍射仪，振动样品磁强计，转矩仪，铁磁共振，磁电阻和磁光等测量与实验方法。

In this research, we prepared Mo doped ZnO thin films on glass a substrate using co-sputtering to improve the conductivity of ZnO. The incorporated concentration of Mo atoms in ZnO was controlled by adjusting the aperture size of a shutter palaced in front of the Mo target. Textured morphology of ZnO film could be formed by attaching a metallic mask on the substrate.

本研究，欲以钼(Molybedeun， Mo)金属掺杂来提升氧ZnO薄膜之导电性，使用一般玻璃做为基板，利用射频溅射ZnO靶材及直流溅射Mo靶材进行共镀，Mo掺杂浓度是藉由钼靶前之挡板中的开口大小来控制，实验中改变基板温度(50℃、100℃、200℃、300℃)并进行镀膜后低压退火处理，藉此探讨Mo掺杂对於ZnO薄膜光电特性之影响，并找出最佳化制程参数。

One-dimension GaN nanomaterials were fabricated on Si(111) substrates through ammoniating Ga2O3/Nb films deposited by ratio frequency magnetron sputtering system and direct current magnetron sputtering system respectively.

用直流磁控溅射系统和射频磁控溅射系统，分别在在硅衬底上先后沉积Nb薄膜和Ga2O3薄膜，接着在氨气气氛中退火制备一维GaN纳米材料。

RO_2·8% Y_2 O_3 was deposited by rf magnetron sputtering on NiCrAlY bond coat,thermal cyclingand fused salt effect experiments were made under the condition of 1100℃ room temperature 1100℃ cold water , and 900℃ room temperature,and were investigated by XRD and SEM,The results showthat ZrO_2·8% Y_2 O_3 deposited appears mainly as cubic and a little monoclinic phase and tetragonalphase.

将ZrO_2·8％Y_2O_3用射频磁控溅射技术沉积在NiCrAlY底涂层上，进行ll00℃→室温，1100℃→冷水和900℃→室温等热周期和熔盐作用的试验。随后进行X－射线衍射分析和扫描电镜（8EM）观察。结果表明，沉积态的氧化锆层主要为立方相和少量单斜相及四方相。

Combined with the 10th five -year key advanced research project of national defense "Firing technology for rifles with variable-firing-rate and double cyclic systems", the impacting dynamic stresses of this kind of rifles three key elements(breech mechanism, receiver, firing pin) are analysed and studied in this paper.

本文结合&十五&国家重点预研项目一&步枪双循环变射频发射技术研究&，对变射频步枪的三个关重件在撞击条件下的动态应力进行了分析研究。

In2O3 thin films were prepared on glass substrates by radio frequency magnetron sputtering. The structural, electrical and optical characteristics of In2O3 films were investigated by atomic force microscope, X-ray diffraction, X-ray photoelectron spectroscope, UV-Visible spectrophotometer and Hall effect measurements.

采用射频磁控溅射法在玻璃衬底上制备氧化铟薄膜，通过测试原子力显微镜、X射线衍射、X射线光电子谱、紫外可见分光光度计以及霍尔效应，研究了氧化铟薄膜的结构和光、电特性。

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

Nanocrystalline silion have many difference from bulk silicon, such as structure, the capability of optics and photoelectricity. It shows high potential on light-emitting devices, photodetector, optoelectronic devices and sensor. Si-rich silica was deposited by RF magnetron sputtering and the film dopped with aluminium is deposited too.

本文采用射频磁控溅射方法制备富硅二氧化硅薄膜，并在此基础上掺入单质铝，经高温退火，自组装生长纳米硅颗粒，并对薄膜进行了拉曼散射、X射线衍射、扫描电镜、傅立叶红外吸收光谱和光电子能谱的测定，对吸收光谱也进行分析。

The influence of sputtering power upon the crystal structure,surface morphology and electrochemical properties of tin oxide films were then investigated.

应用射频磁控溅射技术在硅基底上制备氧化锡薄膜，着重研究溅射功率对薄膜结构和电化学性能的影响。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。