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Experimental accuracy and repetition of FBG temperature sensitivity and compensation were discussed.have selected several materials which has bigger coefficient of expansion to do packaging components, have made many temperature experiments, there have not flaws, such as aging, crackle, absciss layer, packaging materials have good temperature sensitivity and compatibility with optical fiber;have designed the simple and practical packaging components, have performed a serials of experiments about accuracy and repetition of FBG wave-length, have obtained the first step conclusion;have analyzed the result and made comparison between the result of different experiment, have summarized the best packaging effect and several rules to reduce mistskes.

本文所做的主要工作包括以下几个内容:一、选取了常见的热膨胀系数大的材料制作封装元件,经过多次一80℃到80℃反复测试,封装元件没有出现老化开裂、封装裂纹、空洞、离层等缺陷,封装材料具有良好的温敏稳定性及复用性,与光纤相容性较好;二、对光纤光栅进行简单、实用的封装处理,就封装效果的优劣性、波长测量的准确度、重复性和封装时产生的波长损失等方面进行了一系列的实验,得出了初步的结论;三、对温敏和温度补偿式封装的实验数据进行了详细的分析和对比,从数字上对温变过程中光纤光栅中心波长的改变及温变曲线进行了定量的分析,在大量实验数据分析结果的基础上,总结出哪种材料封装效果更好,以及如何有效的减小实验误差。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业,不在行,求高手帮忙。谢谢!具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The packages provided by APM ranging from traditional ones like SO8 and SOT, to fairly advanced one such as WLP etc. APM also offers a turnkey service composing of package design, circuit probe, package assembly, final test, and product drop shipment to the customer.

葵和为其客户提供的一系列封装形式,涵盖从传统的产品如SO8和 SOT,到较高端的封装如WLP等,葵和也为其客户提供的一系列的服务,从封装设计,晶圆测试,封装测试,到客户端交货。

Secondly, It states the package process of White LED in detail and discusses the following aspects: One aspect is the coating method of phosphor, which influences the LED's color temperature and range of available color properties, so,phosphor coating in manufacturing process must be uniform in thickness.

接着根据白光LED所存在的问题,对白光LED的封装工艺和原材料的选择搭配进行改进,在本文中白光LED有两种封装方式,一种是支架式封装形式,一种是大功率LED的封装形式。

On the basis of the summarization of MCM-Cs main features and its assembly and packaging technologies, the paper puts stress on relatively deepgoing studies in practically advanced MCM-C assembly process technologies as gold ball wire bonding, IC chip gold ball stud bump making, IC flip chip bonding and underfilling, in high reliability MCM-C packaging process technologies as integral LTCC substrate packaging, hermetically metal sealing, and also in the basic technological process of MCM-C assembly and packaging. Later on, it presents the effectively engineering development of two high level actual module products--a high-density monolithic processor system MCM-C , a high-speed data collecting and processing system MCM-C. Lastly, it briefly introduces various common methods of quality inspection and reliability test of MCM-C assembly and packaging in engineering practice.

论文在综述MCM-C的主要特点及其组装封装技术的基础上,重点对金丝球引线键合、IC芯片金球凸点制作、IC芯片倒装焊与下填充等实用先进MCM-C组装工艺技术和LTCC基板与外壳及PGA引线的一体化封装、气密性金属封装等高可靠MCM-C封装工艺技术以及MCM-C组装封装基本工艺流程展开了较深入的研究,有效完成了高密度单片机系统MCM-C和高速数据采集控制系统MCM-C等两种高水平实际产品的工程化研制工作,扼要介绍了工程实践中MCM-C组装封装工艺常用的质量检验方法和可靠性试验方法。

The structure and of encapsulating agent model was designed and the flow of resource encapsulated was introduced.

建立了用于资源封装的移动Agent资源封装模型和流程,通过对制造资源的移动Agent封装,实现将制造资源封装成为平台的资源服务结点。

A kind of a special encasing material is developed and used to reinforce the part, It provides shape contrast in image gray scale between the part and the encasing material and has good machinability and proper toughness for image processing. This kind of material is made from resin. The whole encasing process is simple and quick.

开发研制了一种专用封装材料来封装被测零件,封装材料与被测零件的图象灰度具有明显差别,并且具有良好的切削性能,适当的韧性,满足系统图象处理要求,整个封装过程简单方便而又迅速,这种材料以高分子材料为主要原料制得。

Compare with tunable filter detection technique, the wavelength measurement technique using tunable source is analyzed theoretically. We design a kind of all-fiber sensing interrogation system, by using long-period fiber grating as edge filter to interrogate the sensing signal of the FBG sensor. The wavelength resolution of the sensing measurement is 0.05nm.A novel FBG Bourdon tube sensor has been constructed, utilizing the pressure mechanic amplify function of Bourdon tube. The measured pressure sensitivity is two orders of magnitude higher than a simple monomode fiber with an in-fiber grating. Especially the pressure sensitivity of the sensor can be determined by changing the parameters of the cantilever beam. Adopting polymer package technique, we coat fiber Bragg grating by using polymer with different mechanic properties.

利用波登管对于压力的机械放大作用,研制了一种新颖的光纤光栅波登管压力传感器,将FBG的压力灵敏度提高了两个数量级,特别是这一传感器的压力灵敏度的大小可以通过改变悬臂梁自身的参数灵活控制;采用聚合物封装技术,将FBG封装于具有不同力学特性的有机聚合物基底中,利用基底的带动作用,将FBG对压力的灵敏度分别提高了20倍和31.7倍,由于我们采用了特殊的工艺,封装后的FBG不出现任何光栅啁啾;在成功封装的基础上对封装光栅的蠕变效应、FBG与封装材料之间的防滑处理等进行了实验研究;设计了外加圆柱形铝管的聚合物封装光纤光栅,将FBG的压力灵敏度提高了1430倍,可用于对微小压力变化的精确测量。

Based on the tranditional LED technology, we research the LED engineering lightening device, LED 芯片封装),LED 散热system, wised LED Drive and ...which have made the company won 4 inventory award and 1 new applicational inventory.

公司在传统的LED技术的基础上,研究开发了LED工程照明装置、LED芯片封装、LED散热系统、智能化LED专用驱动器与污水处理厂的智能微波杀菌系统等项目,获得国家4项发明专利和1项实用新型专利。

Encapsulant was driven by capillary force into the space between the chip and substrate. Underfill technique can protect the electrical device and prevent the device from destroying because of external force. Underfill has many defects including the fill time is too long, the situation of short shot and air trap are caused easily, the yield of product of Flip-Chip is not highest and the products are universal. Therefore, there are many factors being studied in this paper to sum up the influence of underfill of Flip-Chip process cause by model parameters.

覆晶接合技术为先进电子讯号连接技术中的一种,具有高I/O数、电子讯号路径短以及尺寸小等优点,而采用覆晶接合之电子元件大部分均以底部充填技术进行封装;底部充填是一种以毛细作用为驱动力在晶片与基板之间的间隙充填底胶的封装技术,可以确保晶片不受到外力的影响而损及封装体,但此技术具有充填时间长、容易产生短射与包风等缺点,使得覆晶封装制程良率不高,间接影响覆晶封装产品的普及率,因此本文将依各种可能之参数模型对覆晶封装底部充填制程的影响,以供业界参考。

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