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In order to reduce the natural aging time of 2024 aluminum alloy, a new artificial aging technique of 2024 which aging time is shorter than that of the natural aging technique, based on the hardness and conductivity test and aging principle analysis, was proposed in this paper.

高立柱 ,刘艳红,田秀云为缩短2024铝合金的自然时效时间,本文通过对2024铝合金导电率和硬度实验研究以及对它的时效机理的分析,初步确定了2024铝合金的一种新的时效时间较短的人工时效制度。

A three-mask chip process was first attempted in this work, where the 3rd mask was designed to evaporate the identical metal films for p- and n-pads. However, it was found that the Cr film showed inferior adhesion property on the ITO current spreading layer after the peeling test. In order to overcome this problem, a contact aperture was opened in the mask of ITO layer.

改为三道光罩后,P、N电极使用同一道光罩,并蒸镀相同的金属,但实验后发现,铬和氧铟锡的附著性并不好,经黏贴测试后,发现有电极剥落的情形,所以我们在透明导电层的光罩上,做了个圆孔的设计,这个圆孔的设计可以得到二个优点。

Finally, a two-mask process was attempted to extend the same concept of the chip process. Here the mask of the contact aperture was replaced by the mask of the LED pad. After etching the SiO2 and ITO in the aperture region, a lateral etch of SiO2 was made to increase the ITO contact area. Although the forward voltage of the GaN LED shows a normal value, the process yield is still low and requires further study.

二道光罩制程延伸了三道光制程的理念,只是因为透明导电层的圆孔图形,是用电极的光罩去开的,所以蚀刻完二氧化矽膜及氧化铟锡膜后,必须再做二氧化矽膜的回蚀刻,让二氧化矽再内缩进去,以增加氧化铟锡和电极的接触面积,不会造成发光二极体的顺向电压提高,但因制程良率太低,所以还须要继续研究改善。

Since the liquid ink includes the colorant surface-treated by a polymer comprising units derived from at least a nitrogen-containing polymerizable monomer, it exhibits improved chargeability, reduced conductivity variability and improved dispersion stability at a lower amount of charge control additive.

因为该液体墨水含有用聚合物进行表面处理的着色剂,该聚合物含有的单元来自至少一种含氮的可聚合单体,所以在较少量电荷控制添加剂时,它具有改善的荷电率,降低的导电率可变性以及改善的分散稳定性。

At last the conductibility of base and doping conducting polymer was mensurated The researchful result shows that the new conducting polymer ,whether doping or not, all have better fluorescence and conductivity at the same time, and the complexes have better fluorescence coordinated with Al3+、Zn2+ in solution.

经上述的研究表明,新型的导电聚合物无论是本征态还是掺杂态,既具有比较好的导电性,同时具有比较好的荧光特性,在溶液中与Al3+、Zn2+配合形成的配合物具有较好的荧光特性。

Seventh: The sol-gel method developed here for the synthesis of nanocrystalline film gate are compatible with conventional silicon planar technology, and there is no any limitation to the polarity of the film type n or p for making different kinds of nanocrystalline-film-gate-OSFET sensor. This is a very important basic work for the extending, improving and integrating of the similar devices.

七、研究开发的制备氧化物及复合氧化物纳米晶薄膜的溶胶—凝胶工艺可以实现与硅平面工艺兼容,采用该工艺可以制作不同纳米薄膜栅的OSFET新型气敏元件,薄膜的导电类型不受限制,可以是N型的,也可以是P型半导体,为该种类器件的推广和改进以及进一步的集成化创造了基础。

The above mentioned multiple LED bulbs, current limiting resistor and the connection point of down-leads in series are plugged into the above multiple transverse holes of core accordingly

多个LED灯泡,通过LED灯泡导电电脚上连接的引线相互串联、及与至少一个限流电阻相串接,该LED串联灯串的首端和末端的引线与上述芯线中的铜合线作电气连接,所述的多个LED灯泡、限流电阻及其引线的串联连接点相庆地塞入上述芯线中的多个横向孔中

Ovonics (coined from "Ovshinsky" and "electronics") is a field of electronics that uses materials able to change from an electrically nonconducting state to a semiconducting state shown by glass of special composition upon application of a certain minimum voltage.

Ovonics(选自"Ovshinsky"和新创的"电子")是一个电子,它使用的材料能够改变一个国家到一个不导电电国家半导体所表现出的特殊成分的玻璃后,有一定的最低电压的应用领域。

Results indicate that its conductibility will be improved and its density will decrease if Ce is added into the leadfree solder.In the range of 0.03wt.% to 0.05wt.% of Ce,the wettability of the solder is improved,especially when the content of Ce is about 0.03wt.%,the grains of the micro structure in lead-free solder are smaller and more homogeneo...

结果表明,添加微量的铈后,钎料的导电性能提高,密度下降;铈含量在0.03%和0.05%时可以改善钎料的润湿性;特别是0.03%质量分数时晶粒组织最为细小均匀,焊点抗拉强度也最高;当铈含量大于0.1%时对钎料的性能产生不利影响,润湿时间升高,焊点抗拉强度大幅降低,因此稀土元素铈的最佳含量应为0.03%。

When the device was at forward bias, the holes in the p-type silicon tunneled into the defect states in ZnO:Al and then radiatively recombined with the electrons in ZnO:Al film, thus yielding an electroluminescence spectra at the wavelength at 590nm.

另一方面,当元件操作在顺向偏压时,由於ZnO:Al薄膜内的缺陷提供了p-Si内的电洞利用穿隧效应进入ZnO:Al薄膜的途径,这些电洞进而与ZnO:Al导电带的电子结合而发光,因此我们量测到波长在590nm的可见光发光频谱。

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