导沟

But, because mobility of raceway groove of Si CMOS parts of an apparatus is low, bring about parts of an apparatus cross guide the Si parts of an apparatus that falls under same size, so gain of its open loop also is less than the Si operation amplifier of identical structure and dimension.

但是，由于Si CMOS器件沟道迁移率低，导致器件的跨导低于相同尺寸下的Si器件，所以其开环增益也小于相同结构和尺寸的Si运算放大器。

The spectroscopic and morphology results show that NOMA could be rapidly and effectively adsorbed on the surface of SWNT without changing the native structure of NOMA and the structure properties of SWNT.

以NOMA-SWNT管束为导通沟道构建了碳纳米管场效应管器件，检测了麦芽糖和伴刀豆凝集素蛋白的特异性识别作用。

To determine the quality characteristics is the first step in Taguchi method. Since the purpose of this work is to discuss the influence of microstructures in the incidence plane on the luminance uniformity near the incidence plane of a LGP in a LED BLU. The luminance uniformity in the region near the incidence plane is assigned as quality characteristics in Taguchi method. The nominal-the-best is chosen as the ideal function of quality characteristics.

田口实验方法第一步骤为选定品质特性，因为本文在於讨论入光侧纵沟微结构对於导光板入光侧之辉度分布影响，故田口方法之品质特性为入光侧辉度均匀度，而品质特性之想机能为望目特性。

Firstly, full factorial experiment method is implemented to achieve an optimization of longitudinal microstructure design in the incidence plane of a LGP for LED BLUs. There are three control factors involving in the optimization process: the pitch and depth of both V-cut and U-cut, and angle and radius for V-cut and U-cut, respectively. Each individual control factor has three levels. It leads to a total of 27 sets of experiments.

本实验先行讨论全因子实验求取发光二极体背光模组之导光板入光侧纵沟微结构最佳化设计，选定入光侧V-cut纵沟微结构控制因子：V-cut角、V-cut间距、V-cut深及入光侧U-cut纵沟微结构控制因子：U-cut半径、U-cut间距、U-cut深等项目，其中各一因子分别有三个水准变化，依控制因子及其水准的目各进行27组实验。

The pulse power method is applied in the forward transconductance and static drain-source on resistance testing of power MOSFET, which could solve the overheat problem of parameters testing under great bias current well.

将脉冲功率法引入功率MOSFET跨导和沟道电阻的测试，很好地解决了大电流偏置下参数测试的散热问题。

This test apparatus is able to measure the drain-source breakdown voltage, static drain-source on resistance, gate threshold voltage, forward transconductance and input capacitance of power MOSFET accurately, which has been applied in practice.

所设计的功率MOSFET测试仪可以进行功率MOSFET的耐压、沟道电阻、开启电压、跨导及输入结电容几个参数的精确测量，并已实用化。

Its work principle and structure are presented. Design calculation of the vertical auger attachment, related key technologies and trenching performance of the basic machine are expatiated.

对其工作原理和结构加以介绍，阐述了"变导程"立式螺旋工作装置的设计计算、相应的关键技术和整机的挖沟工作性能。

Quartz is studied using an electrical conductible degree of ore-bearing fluids and infrared spectrum .

借助于成矿溶液电导度和红外光谱方法对刺猬沟和三道湾子金矿区石英进行了分析。

The quartz is studied using an electron paramagnetic resonance, infrared spectrum and the electrical conductible degree of ore-bearing fluids.

借助于电子顺磁共振、成矿溶液电导度和红外光谱方法对刺猬沟金矿区石英进行了分析。

The effective channel mobility of4H-SiC MOSFETs is increased significantly by high temperature anneals in nitric oxide.4H-SiC MOSFET with hydrogen postoxidation annealing has a lower threshold voltage of3.1V and a wide gate voltage operation range in which the inversion channel mobility is more than100cm 2 /Vs.

SiC的雪崩击穿电场是Si的十倍，因此，理论上SiC单极功率器件的导通电阻可以比Si器件的低400倍，但在6H-SiCMOS结构中，由于反型层的电子迁移率较小，沟道迁移率测量值仅为40～50cm2/Vs，远远低于6H-SiC的体迁移率400cm2/Vs眼1熏2演，限制了SiC功率MOSFET的导通电阻Ron。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。