室温

RO_2·8% Y_2 O_3 was deposited by rf magnetron sputtering on NiCrAlY bond coat,thermal cyclingand fused salt effect experiments were made under the condition of 1100℃ room temperature 1100℃ cold water , and 900℃ room temperature,and were investigated by XRD and SEM,The results showthat ZrO_2·8% Y_2 O_3 deposited appears mainly as cubic and a little monoclinic phase and tetragonalphase.

将ZrO_2·8％Y_2O_3用射频磁控溅射技术沉积在NiCrAlY底涂层上，进行ll00℃→室温，1100℃→冷水和900℃→室温等热周期和熔盐作用的试验。随后进行X－射线衍射分析和扫描电镜（8EM）观察。结果表明，沉积态的氧化锆层主要为立方相和少量单斜相及四方相。

The pin configuration between the low-temperature cold platform and the room-temperature shell is realized by introducing a special processing method to the preparation and connection of the installation underlay, the down-lead circuit, the feed-through collar and the metal leads.

通过在安装衬底、引线电路、引线环、金属引线制备和连接上引入特定的处理方法，来实现了低温冷平台与室温外壳之间的引线结构，本发明实现了低温冷平台与室温外壳之间高通用、高气密的电学和真空连接，有利于微型红外探测器杜瓦组件的寄生热负载降低和长真空寿命的获得，同时引线连接点可承受高速率变化的高低温冲击，具有较高的可靠性。

In this dissertation,preparation and thermoelectric characterization of conventional silicon-based materials and devices have been studied, including amorphous silicon films, polycrystalline silicon germanium films and amorphous silicon thin-film-transistors. A novel MEMS-IC integration method based on porous silicon micromachining has been developed, which is used to fabricate resistive bolometers with a-Si and polySiGe films, and a-Si TFT-based room-temperature infrared detector pixels and 8×8 arrays with primary capability of thermal imaging have been reported for the first time.

本文深入系统地研究了a-Si薄膜、polySiGe薄膜和a-Si TFT等三种常规硅基材料和器件的制备方法和热电特性，开发了一套新型的基于多孔硅牺牲层技术的MEMS-IC集成工艺，利用该工艺成功地制作了a-Si和polySiGe薄膜电阻式测辐射热计，在国际上首次提出并实现了基于a-Si TFT的室温红外探测器单元与8×8阵列原型，器件初步具备了室温红外热成像的能力。

Finally, based on theoretical analysis and structure designs of a-Si and polySiGe bolometers and TFT-based room-temperature infrared detectors, layouts and process-flow designs are performed. The a-Si and polySiGe bolometers with various structures and dimensions are fabricated using the MEMS-IC integration processes proposed in this dissertation. For the first time, the a-Si TFT-based room-temperature infrared detectors and arrays are demonstrated. Several fabrication runs are conducted to increase the yield.

在理论分析和结构设计的基础上，对a-Si、polySiGe测辐射热计和a-Si TFT室温红外探测器进行了版图和工艺设计，采用基于多孔硅牺牲层技术的MEMS-IC集成工艺制作了多种结构尺寸的a-Si和PolySiGe测辐射热计，并且首次实现了a-Si TFT室温红外探测器及阵列，进行了多次工艺流水，器件成品率较高。

With the steelmaking-casting-direct rolling process and charging furnace at room temperature in laboratory, the influence of different charging temperature on the microstructure and properties of X70 pipeline steel were researched.

采用实验室钢坯室温装炉和炼钢－连铸－直接轧制的不同方法，研究了用钢坯室温装炉工艺和连铸连轧工艺生产X70管线钢时，不同的装炉温度对成品组织性能的影响。

The results show that the spreading area of series Ni-P filler metal increases with the increase of brazing temperature, and the spreading areas of Ni-P filler metal is larger than that of Ni-Cr-P filler metal; the shear strength of the brazed joint at room temperature increases with the increase of temperature from 925℃ to 1000℃, and the shear strength of the stainless steel joint brazed with Ni-P filler metal is superior to that with Ni-Cr-P filler metal by 30~40 MPa in the same brazing technology.

结果表明，Ni-P系钎料铺展面积随钎焊温度的升高而增大，并且相同温度下不含Cr的Ni-P钎料铺展面积大于Ni-Cr-P的铺展面积；钎焊温度从925 ℃升高到1000 ℃过程中，Ni-P、Ni-Cr-P钎料钎焊不锈钢接头的室温剪切强度均增大，并且在相同钎焊工艺下，不含Cr的Ni-P钎料钎焊不锈钢接头室温剪切强度优于Ni-Cr-P钎焊接头强度30~40 MPa；Ni-P系钎料钎焊接头高温强度随温度升高而下降，测试温度超过500 ℃时，相同温度下含Cr的钎料能够提高钎焊接头强度0~30 MPa。

The initial discharge capacities of samples at room temperature and elevated temperature (55℃) are 128.2 and 125.0mAh/g respectively. After 50 cycles, the retentions of capacity are 90% and 68%. The spherical spinel LiMn2O4 both have high specific capacity and excellent cycleability.

室温和高温条件下首次放电比客量分别为128.2和125.0mAh/g，50次循环后容量保持率分别为90%和68%，球形LiMn2O4在室温和高温下均具有较高的比容量和优良的循环性能。

Further theoretical analysis demonstrated the lateral effective width of crescent-shaped quantum wires was 6nm within the regime of quantum size. With two-dimensional separated-confinement-heterostructures, the multi-quantum-wire laser arrays operated in pulsed condition (1kHz/1μs) at room temperature, and their pulse light outpower reached more than 115mW, which is the best among all quantum wire lasers reported previously.

这种多量子线激光器列阵具有二维分别限制的异质结构，并在室温脉冲（重复频率1kHz，脉宽1μs）下产生激射，光脉冲线性输出功率可达115mW以上，这是目前国际上各类量子线激光器的最好水平；子带间能隙最大为27meV，与室温下热离化能相当，优于目前国际上报道的同类量子线激光器的最好水平。

By this technique, quasi twodimensional growth of AlN was achieved under optimized condition, and more, high quality GaN layers were grown on Si (111) substrates using optimized AlN as buffer layer, and the full width at half maximum of near band edge emission at room temperature is the best reported result.

实验结果表明，经优化预沉积Al，成功获得了AlN在Si（111）衬底上的准二维生长，从而生长出高质量的以AlN作为缓冲层的Si基的GaN薄膜材料，其室温光致发光带边发射峰半高宽10nm，为所见报道室温测量结果最小值。

Melting point 3410 ℃, boiling point 560 ℃, relative density of 1935, F the external electronic structure of 5d46s2, in the chemical reaction time is very easy to lose 1-6 electronic, but also can get 1-2 electronic, so oxidation number of 0,± 1,± 2, 3, 4 , 5 and 6, with 6 price of the most stable compounds, such as WO3 does not dissolve in water, the air will form in the tungsten trioxide thin protective layer of tungsten, tungsten with fluorine at room temperature, chemical combination, red hot when there is no moisture and Bromine iodide together, red hot when you can and water reaction WO3, at room temperature reaction of tungsten with aqua regia, but the hot concentrated hydrochloric acid and sulfuric acid can only be played with its weak response, but molten nitrate, nitrite, too Hydrogen peroxide, sulfur steam, steam and other phosphorus can play intense reaction, high temperature can not be carbon, boron and silicon reaction of binary compounds, widely used in industrial tungsten steel and tungsten carbide, pure tungsten filament is used to the system, and X-ray tube Tube heating components, semiconductor components can be prepared tungsten silicide, tungsten industrial production is white or black tungsten ore tungsten ore refining.

熔点3410℃，沸点560℃，相对密度1935，F外围电子结构为5d46s2，在化学反应时很容易丢掉1—6个电子，也能得到1—2个电子，所以氧化数为0、±1、±2、＋3、＋4、＋5和＋6，以＋6价化合物最稳定，如WO3不溶于水，空气中的钨会形成薄层三氧化钨保护层，钨能与氟在室温下化合，红热并无潮气时能与溴、碘化合，红热时还能和水反应生成WO3，室温下钨可与王水反应，但热的浓盐酸和硫酸只能与其起微弱反应，但对熔融的硝酸盐、亚硝酸盐、过氧化氢、硫蒸汽、磷蒸汽等能起激烈反应，高温下不能与碳、硼和硅反应生成二元化合物，工业上广泛使用钨钢和碳化钨，纯钨用来制灯丝、电子管和X射线管的发热元件，硅化钨可制半导体元件，钨工业生产是将白钨矿石或黑钨矿石精炼。

With Death guitarist Schuldiner adopting vocal duties, the band made a major impact on the scene.

随着死亡的吉他手Schuldiner接受主唱的职务，乐队在现实中树立了重要的影响。

But he could still end up breakfasting on Swiss-government issue muesli because all six are accused of nicking around 45 million pounds they should have paid to FIFA.

不过他最后仍有可能沦为瑞士政府&议事餐桌&上的一道早餐，因为这所有六个人都被指控把本应支付给国际足联的大约4500万英镑骗了个精光。