失配

Under model-plant mismatch the robustly asymptotic stability and global convergence of the resulting closed-loop system are guaranteed by selecting proper prediction horizon.

同时给出了在模型失配情况下保证闭环系统全局渐近稳定的预报长度范围和模型失配上限值。

In this article, the stress inside a quantum-wire structure is studied. Based on the derived expression of the stress inside a quantum-wire structure with arbitrarily shaped cross section, the analytical solution of the stress inside a trigonal quantum-wire structure in an infinite matrix is obtained.

研究了晶格失配和热失配在半导体量子线结构中所产生的弹性场，在分析圆柱形量子线结构弹性场的基础上，推导得到了任意截面形状量子线结构解的一般形式，并给出无限大基体内横截面为三角形量子线结构的解析结果。

The reauthentication protocol in POD copy protectionspecification can not defend the protocol against a simplest replay attack. The AKE protocol in the specification has unwelcome security attributes on implementation. The AKE protocol in DTCP specification has the sender mismatching or receiver mismatching attributes, which can threat the integrity goal of DTCP system and may affect possible application scenarios.

指出配置点拷贝保护系统中的重新认证协议不能抵抗简单的重放攻击，其中的认证密钥交换协议具有实现上不受欢迎的安全属性；指出数字电视拷贝保护规范中的完全认证协议具有发送者失配或者接收者失配属性，这些属性会威胁该规范的完整性目标，并影响该规范可能的应用场景。

We propose a new mechanism of ASFC, which based on energy transfer among the centers within the inhomogeneously broadened spectral profile. We discuss it in two situations: small energy mismatch and large energy mismatch. The dependence of relative cooling efficiency on excitation photon energy and temperature is also discussed in evaluating the new mechanism.

提出了荧光光谱的非均匀线形内不同发光中心的能量传递产生荧光制冷效应的理论，分别对小能量失配的传递过程和大能量失配的传递过程进行了研究，认为在一定的条件下这两种过程都可以产生荧光制冷效应，并给出了相对制冷效率。

Therefore, the uplink cross-pol interference that we meet is normally caused by the polarization angle mismatch of ground transmitting antennas, or serious overdriven of the uplink power at cross-polarization. And the downlink cross-pol interference is normally caused by the polarization angle mismatch of ground receiving antennas.

因此，常见的反极化干扰通常为，因反极化地面发送天线的极化角失配、或因反极化载波的上行功率严重超标而产生的上行反极化干扰，以及因地面接收天线的极化角失配而产生的下行反极化干扰。

It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.

众所周知，晶格失配和热应力失配是GaN异质外延中位错产生的主要原因；为此，我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试，其中尝试了侧向外延生长技术，得到了低位错密度（小于10〓/cm〓）、高质量的GaN外延层；尝试多低温缓冲层法，发现材料中的应力特性与生长系统和生长条件有关，材料中的应力与位错密度按相反方向变化；首次尝试高低温联合缓冲层法，材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大，从而导致随后高温GaN外延膜中位错密度降低，并且能够有效地抑制黄光峰。

The result shows that the equalmatching characteristic of 10Ni5CrMoV steel welded joint is prominent.The probability of equalmatching is 48.11%,as well as,that of undermatching and overmatching are 47.55% and 4.34%,respectively.The mean-value of strength matching coefficient is nearly higher than its lower ...

计算结果表明，10N i5CrMoV钢焊接接头的等强匹配特征明显，等强匹配概率为48.11%，低强失配和超强失配概率分别为47.55%和4.34%；强度匹配系数均值偏下限，为0.955；由于母材强度数据的标准差比焊缝要大，约为1.54倍，从而使得强度匹配系数离散度较大；此外，焊接接头强度匹配系数小于0.86的概率为2.96%，可能会导致焊接接头产生冷裂纹。

The proposed algorithm can deal with Carrier Frequency Offset and Sampling Frequency Offset estimation with the presence of frequency dependent In-phase and Quadrature-phased imbalance. Then frequency dependent I/Q imbalance and channel response are jointly estimated.

该联合估计算法能在存在频率相关性I/Q失配的情形下准确获得载波频率偏差和采样频率偏差的估计，并获得频率相关性I/Q失配和信道冲击响应的联合估计信息。

We obtain the "misfit strain-misfit strain" phase diagram and energy diagram for BST thin film grown on tetragonal base at room temperature.

得到了室温下生长在四方基底上的BST50/50薄膜的&失配应变—失配应变&相图和能量图。

We obtain the "misfit strain-misfit strain" phase diagram and energy diagram for BST thin film grown on tetragonal base at room temperature.

用朗道－德文希尔理论研究了非平衡双轴失配应变对单畴外延钛酸锶钡薄膜相变的影响，得到了室温下生长在四方基底上的BST50/50薄膜的&失配应变－失配应变&相图和能量图。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。