多道处理

Under the condition of the borehole and sandstone formation filling with oil and water, respectively, the ability is different when different energy windows are selected to distinguish formation by simulating the detector response spectrum of various diameters and length of NaI and BGO crystal. The C/O value difference of BGO crystal is higher than that of NaI crystal when the energy window includes photoelectric peak, the first and the second escape peaks, but it is less affected by the different sizes of detector crystal. Using photoelectric peak corresponding to the energy window, the C/O value difference of BGO crystal detector is much larger than that of NaI, but it increases with the crystal size increasing. The C/O value is greatly affected by energy drifting, while relatively a little by energy resolution.

对于井眼和地层流体分别为油和水砂岩地层，模拟改变NaI和BGO晶体探测器的直径和长度时的非弹性散射γ射线响应能谱，采用不同能窗处理方法对地层流体的分辨能力不同，选取光电峰和第一、第二逃逸峰对应的能量窗时，BGO晶体探测器比NaI晶体探测器测量的C/O差值大，但受尺寸的影响不大；采用光电峰对应的能量窗时，BGO晶体探测器测量的C/O差值比NaI的大得多，且随尺寸的增加差值增大；能量道的漂移对C/O值影响较大，而能量分辨率对差值影响相对较小。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Straight hair will roll through the cut head, cut tail, cutting edge and multi-pass straightening, formation, finishing line treatment, and then cutting board or heavy volume, it becomes: hot rolled steel plate, flat hot-rolled coil, slitting with other products.

将直发卷经切头、切尾、切边及多道次的矫直、平整等精整线处理后，再切板或重卷，即成为：热轧钢板、平整热轧钢卷、纵切带等产品。

Facing to the key problems in computer vision measurement, for example, the method of laser strip image processing, the algorithms of extracting"feature point"of joint, the method of structure light sensor design and so on, comprehensive studies are down on both theory and in practice.

本文在对常用的焊接接头跟踪方法进行系统研究的基础上，选择结构光视觉的方法来检测和跟踪焊接接头；并针对视觉传感器的结构光图象处理方法、焊接接头特征点提取算法和结构光传感器的设计方法等进行了大量的研究，成功地研制出一套多道焊焊接接头跟踪控制系统。

Comclusion: transpetrous presigmoid retrolabrinth approach was rational approach for surgery on petroclivus and -4- CPA; it抯 important for accomplish the surgery to study and master the anatomy and variance of this approach; there was relative anatomical relationship among those structure on posterior of petrous bone; AAMP was the extracranial mark of inflexion of TS and SS; LAM and PSC were obvious bone marks for operation; we can confirm the abraded range of petrous bone lean upon LAM and/or GSS beside abrading step by step as literature, and it抯 unnecessary and unrational to emphasize to show PSC if the surgical space was enough; preceding sigmoid sinus and high jugular bulb often appeared at right and would bring disadvantage effect; interspace ,between CN V and CNVII or CNVII and CNJXI, were available to reach clivus and manage the mass on the range.

经SS前迷路后入路是处理岩斜坡区、桥小脑角区病变理想的手术入路；研究和熟悉手术入路中的解剖结构及部分变异对指导手术十分必要；岩骨内测面的骨性结构之间有着相对稳定的空间关系；顶乳缝前角是SS和TS转接处在颅外的标志；IAM和PSC等结构可以作为手术中的重要骨性标志；以PSC确定岩骨的磨除范围是较安全和可靠的，但亦可以结合影像检查，以内耳道和乙状窦前缘为基点判定切除范围，如果操作空间足够，过分强调磨出半规管是不适当的；右侧GSS的宽度和深度较对侧大，SS前置和颈静脉球高位较对侧多见，这些都对右侧入路有不利的影响，但仍可以进行手术操作；三叉神经和面神经间隙及面l 神经和舌咽神经间隙方便到达斜坡并处理病变。l

Objective To assess the clinical application of multi slice CT in the diagnosis of gastric tumors, and to compare CT findings with GI and gastroscopic results.

资料与方法对 2 3例经上胃肠道钡餐造影和胃镜检查诊断为胃肿瘤的患者行多层螺旋CT容积扫描，分别以多平面重建技术、3DCT技术(包括SSD和RaySum)和CT仿真胃镜技术进行后处理。

Then it studied a method called intertrace sequence regulation suppressing multiple in detail, which advanced by Bruland. Through thoroughly analyzing its algorithm, researching actual processing effect, after making great improvement, this paper raised a new suppressing method called Seismic Trace Sequence Regulation.

然后详细研究了由 Bruland 等人提出的以样点空间调序方式压制多次波的方法，通过深入剖析其算法，研究实际处理效果，对原方法作了较大改进，提出了道序调整多次波压制法。

A steel plate having a tensile strength of at least about 930 MPa (135Ksi), a toughness as measured by Charpy V-notch impact test at least about 120 joules (88 ft-lb), and a microstructure comprising at least about 90 volume percent of a mixture of fine-grained lower bainite and fine-grained lath martensite, wherein at least about 2/3 of said mixture consists of fine-grained lower bainite transformed from unrecrystallized austenite having an average grain size of less than about 10 microns and comprising iron and specified weight percentages of the additives: carbon, silicon, manganese, copper, nickel, niobium, titanium, aluminum, calcium,rare earth metals, and magnesium, is prepared by heating a steel slab to a suitable temperature; reducing the slab to form plate in one or more hot rolling passes (10) in a first temperature range in which austenite recrystallizes; further reducing said plate in one or more hot rolling passes (10) in a second temperature range in which austenite does not recrystallize, quenching (12) said plate to a suitable quench stop temperature (16); and stopping said quenching and allowing said plate to air cool (18) to ambient temperature.

一种钢板，其抗拉强度至少约930MPa135ksi），在－40℃（－40°F）下，采用夏氏V型缺口冲击试验测定的韧性至少约120焦耳（88英尺－磅），并且其显微组织包含至少约90％体积的细晶粒的下贝氏体和细晶粒的板条马氏体的混合物，其中该混合物的至少约2／3由从平均粒径小于约10微米的未再结晶奥氏体转变而来的细晶粒的下贝氏体组成，而且，其中所述的钢板包含铁和特定重量百分比的添加元素：碳、硅、锰、铜、镍、铌、钛、铝、钙、稀土金属和镁，所述钢的制备过程为：将一钢板坯加热至一个适当的温度；在奥氏体可发生再结晶的第一个温度范围内，采用一个或多个热轧道次（10），将所述板坯轧制成板材；在奥氏体不发生再结晶的第二个温度范围，采用一个或多个热轧道次（10）进一步轧制所述板材；将所述板材淬火处理（12）至一个适当的淬火终止温度（16）；停止所述淬火处理并将所述板材空冷（18）至室温。

Methods The spontaneous contraction of gastric smooth muscle strip was recorded by using physiograph in rats. The change of tension in response to different concentrations of CNP and sodium nitroprusside, co-incubated with high concentration glucose (30 mmol/L) or mannitol were detected.

取大鼠40只制备胃窦环形肌条，肌条收缩活动稳定后，对照1、2组分别加入不同浓度CNP1×10^(-8、3×10^(-8)、1×10^(-7)mol/L及硝普钠1×10^(-7、3×10^(-7)、1×10^(-6)mol/L，观察其效应，每次加药观察20 min，冲洗3次；高糖1、2组预加葡萄糖使浴槽终浓度为30 mmol/L，其后操作同对照1、2组；甘露醇组预加甘露醇30mmol/L，其后操作同对照1组；均采用多道生理信号采集处理系统计算CNP致平滑肌张力的抑制率。

Microsilica silica fume and micro-production processes is the difference from natural quartz silica (SiO2) or fused silica (natural quartz at high temperature melting, after cooling the amorphous SiO2) by crushing, ball milling , flotation, acid purification, high purity water treatment by multi-channel processing of the powder.

硅微粉与微硅粉的生产流程上的差异硅微粉是由天然石英（SiO2）或熔融石英（天然石英经高温熔融、冷却后的非晶态SiO2）经破碎、球磨、浮选、酸洗提纯、高纯水处理等多道工艺加工而成的微粉。

Lugalbanda was a god and shepherd king of Uruk where he was worshipped for over a thousand years.

Lugalbanda 是神和被崇拜了一千年多 Uruk古埃及喜克索王朝国王。

I am coming just now,' and went on perfuming himself with Hunut, then he came and sat.

我来只是现在，'歼灭战perfuming自己与胡努特，那麼，他来到和SAT 。