多晶的

8Co alloy have been studied by means of optical and transmission electron microscopy, X-ray diffraction, dilatometry, tensile tests and Vickers hardness measurements. The inherent factors responsible for the low shape memory effect of polycrystalline Fe-Mn-Si alloys have been revealed.

本文通过金相、透射电镜及X-射线衍射分析以及热膨胀、拉伸和硬度试验等手段研究了Fe-25.6Mn-5.1Si-4.1Ni-1.8Co合金中应力诱发γ→ε马氏体相变和形状记忆效应，揭示了引起多晶Fe-Mn-Si系记忆合金形状记忆效应低的内在因素。

Several important applications of BDD electrode in eleclroanalysis, electrosynthesis and electrochemical wastewater treatment are summarized .

本文综述了高掺杂硼复合多晶金刚石薄膜电极在电化学中的几个重要应用，包括电分析、电合成及电化学法处理废水等。

The martensitic transformation in the ultra-fine particles of single crystal and the particles of polycrystalline structure.

4超细单晶颗粒和多晶结构颗粒中的马氏体相变。

Starting with the toughening of ceramics, the subcritical crack growth model on monotonical loads was set up for the first time, and the V—K curves in the subcritical crack growth process and the effects on them were obtained by use of computer simulation.

首次从材料增韧入手，建立了单向载荷形式下亚临界裂纹扩展模型，并利用计算机数值计算获得裂纹扩展过程中V—K曲线及其影响因素，由此对多晶陶瓷材料疲劳现象的本质进行了分析。

The effect of fine particles on the flow behavior of polycrystalline ice under stress has been studied.

研究了应力下微粒对多晶冰流变行为的影响。

The synthesis and some properties of high purity polycrystalline lithium thioindate are investigated.

本文研究了高纯LiInS2多晶原料的合成及性能。

According to Ag2S-Ga2S3 pseudobinary phase diagram, AgGaS2 polycrystalline materials with the congruent melt composition were synthesized by a new method, i. e. vapor transporting method with two-zone temperature oscillation, and generic vapor transporting method respectively.

根据对Ag2S-Ga2S3赝二元相图的分析，采用同成分点配料，分别采用一种新方法―两温区气相输运温度振荡法和普通气相输运法合成AgGaS2多晶材料。

Bearing-silver rhyolitic crystal tuff is the important criteria for ore prospecting in the silver polymetllic deposit.

含银流纹质晶屑凝灰岩是银多金属矿的重要找矿标志。

Strained Si PMOSFET with Polycrystalline SiGe gate can enhance its performance for improvement of carrier mobility and turnable threshold voltage without impurity scattering to carrier.

应变Si pMOSFET以多晶SiGe做栅，既能提高空穴的迁移率，又能调节器件阈值电压而不会对载流子引入杂质散射，因而提高了器件性能。

Annual output of ceramic fiber 1050 series, 1260 series ceramic fiber products, ceramic fiber products 1400, more than 1600 grain products 8000 tons annual production capacity, with cotton, blankets, carpets, rope, board, paper, cloth, modules, castable , refractory bricks, such as fiber products of different forms more than thirty.

年产1050陶纤系列产品、1260陶纤系列产品、1400陶纤系列产品、1600多晶系列产品年生产能力8000吨，具有棉、毯、毡、绳、板、纸、布、模块、浇注料、耐火纤维砖等不同形态的产品三十余种。

I am accused of being overreligious," she said in her quiet, frank manner,"but that does not prevent me thinking the children very cruel who obstinately commit such suicide.""

客人们在卡罗利娜·埃凯家里，举止就文雅一些，因为卡罗利娜的母亲治家很严厉。

Designed by French fashion house Herm è s, this elegant uniform was manufactured in our home, Hong Kong, and was the first without a hat.

由著名品牌 Herm è s 设计，这件高贵的制服是香港本土制造，是我们第一套不配帽子的制服。