多晶的

With the increase of SiO〓 layer uiickness, pseudocrystal SiO〓 initially grows into cristobalite and, then, into amorphous when its thickness beyond 3.4nm.

随着SiO〓层厚的增加，TiB〓／SiO〓多层膜中的SiO〓从赝晶结构长成方石英结构，并在SiO〓层厚超过3.4nm后转变为非晶。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

In the second formation of the Langshan group in the Dongshengmiao polymetallic pyrite deposit, metamorphic basic volcanic rock s have been discovered,except quartz keratophyre, with a blastoporphyritic texture containing albite and oligoclase and minor, pyroxen and hornblende.

东升庙硫－多金属矿床狼山群二组含矿地层中，除已发现的变质石英角斑岩之外，又找到具有变余斑状结构（斑晶主要为钠质斜长石，另有少量辉石和角闪石）的变质基性火山岩和变质凝灰岩夹层以及火山岩屑与晶屑。

By employing such a method, 5 series of elastomers, including natural rubbers, elastomeric polyester fibers and ethylene-octene, ethylene-methyl acrylate as well as SIS triblock copolymers, were investigated with the purpose of studying elongation induced phase structure and mobility changes of the samples. For NR samples, it was demonstrated that there exists a small amount of crystals at RT even for unelongated samples. For both NR and the soft segment of PEE, with the increase of elongation ratio, the elongation-induced crystallinity increases almost linearly in a certain region of R, in accord with the increase of the lamellar thickness of the crystals; The behavior of ethylene copolymers, in terms of elongation induced morphorpholgy changes, are quite different from NR and PEE. The crystals are found to be gradually destroyed with the increase of R, with accord with the decrease of the lamellar thickness; The motional behavior of the soft segment of SIS, changes from "liquid" to "solid", in terms of 13C NMR spin-lattice relaxation.For many of the aformented samples, the dependence of 13C spin-lattice relaxtion time T1 on R are different for different groups, indicating that the changes of mobility at MHz frequency region with elongation are different for different groups.

通过对天然橡胶、聚醚酯嵌段共聚物、乙烯-辛烯共聚物、乙烯-丙烯酸甲酯共聚物、SIS等高分子弹性体样品聚集态结构和分子运动的研究，获得了一些新的实验结果，如：给出了确切的实验证据，证明了室温下未拉伸的天然橡胶样品中存在着微量的结晶；发现随着拉伸比增加，天然橡胶及聚醚酯样品的软段部分会出现拉伸诱导的结晶，且结晶度在一定范围内呈现近似线性的增加，所形成晶片的厚度也随之逐渐增加；而乙烯共聚物随着拉伸比的增加，原有的结晶会被逐渐破坏，晶片厚度逐渐变薄，结晶中的缺陷逐渐增加；随着拉伸比的增加，SIS中PI软段部分的核磁共振弛豫行为会出现从液态到固态的转变等；在对上述多个体系的研究中，还发现不同基团的自旋-晶格弛豫时间随着拉伸比呈现不同的变化趋势，表明不同基团的高频运动随拉伸比增加有不同的变化规律。

This paper designs TCR TSC SVC controller based on non affined nonlinear model .

对由晶闸管控制电抗器型装置与多个晶闸管开关电容器型装置组成的静止无功补偿系统建立了一个新的非仿射非线性模型。

Apart from being a variety within the group, Chalcedony is also a catch all term to describe cryptocrystalline Quartz and includes many gems that have been coveted since antiquity.

除了玉髓属于隐晶石英类的其中一个品种以外，她还是一个可以用来说明隐晶石英特征的一个全全代表，并且玉髓多个宝石级品种从古至今一直被人们追捧。

They are important components of many metamorphic and ignious rocks.

工业上应用较多的主要是镁铝尖晶石和镁铬尖晶石。

They are important components of many metamorphic and ignious rocks.

工业上应用较多的主要是镁铝尖晶和镁铬尖晶石。

The two-dimensional structural units (such as silicon-oxygen tetrahedral sheet, octahedral sheet), interlayer space are assembled according to the sphere close packing manner, and the close packing layers parallel to {0001}. There are several mechanisms to release the difference in size while the silicon-oxygen tetrahedral sheet and octahedral sheet assemble the TO and TOT-type structural layers. The two types of structural layers with different interlayer space fitted together in six kinds of assembling modes and formed six kinds of crystal layers. The combinatorics analysis of the two-dimensional structural units revealed that there may be 28 kinds of TOT type interstradified minerals in six kinds of polysomatic assembling modes of interatradified structure. The structural layer is symmetrical for octahedron sheet in the structure of interstratified minerals and shows polarity characteristics.

结果表明，不同二维结构单元体（包括硅氧四面体片、八面体片、层间域的构筑基本符合球体紧密堆积原理，紧密堆积层平行{0001}；四面体片与八面体片构筑TO和TOT结构层时采取多种机制消除二者在二维尺寸上的差异；两种模式的结构层与不同类型的层间物组装形成六种组装模式的晶层；并通过二维结构单元体的组合规律的分析，计算出可能存在的28种TOT型间层结构，它们分属于6种间层结构多体性组装模式；间层结构中，结构层对于八面体片是不对称的，并在属性上表现出极性特征；间层矿物的晶层类型可用6种多体性组装模式加以表达。

Four-pointed or six-pointed star sometimes can be seen in a spinel, but it is rarely reported that there are multiple groups of asterism on the same spinel.

常见尖晶石有六射或四射星光。对同时具有多组星光效应的尖晶石少见报道。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。