外延的

As American educator Walter once said:the denotation of Chinese is equal to the connotation of life.

美国教育家华特说过"语文的外延与生活的外延相等"。

A thin epitaxial layer ( 10gm ) ldmos device used n - burry layer structure was proposed in the paper during the high - voltage device design , which is helpful to improve the drive circu it ? technology

在高压器件研究中，提出了一种外延层厚度为10m 采用n 埋层结构薄外延高压ldmos 器件，对进一步改进驱动电路的工艺有着积极的意义。

Considering the shortcoming of thick epitaxial layer technology , author proposed a thin epitaxial layer ldmos used n - burry layer .

针对目前厚外延工艺的缺点，提出的薄外延ldmos 采用n 埋层，通过优化n 埋层长度、注入剂量可提高器件耐压。

A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.

我们通过金属有机化合物气相沉积系统在蓝宝石衬底上外延生长了高温AlN模板及后续生长的AlGaN外延层的研究。

The key to make bi-epitaxial film is to control the epitaxial growth of multi-layer different materials.

制备双外延薄膜的关键是要实现薄膜的多层异质外延生长。

The morphology and density distribution of etch pit s formed by Schaake and Chen etchants on the {111} B face of HgCdTe liquid phase epitaxy films are studied.

通过对Schaake和Chen腐蚀剂在HgCdTe外延材料(111)B面腐蚀坑特性的研究，揭示了HgCdTe液相外延材料中的缺陷特征及其密度分布规律。

The morphology and density distribution of etch pits formed by Schaake and Chen etchants on the {111} B face of HgCdTe liquid phase epitaxy films are studied.

通过对Schaake和Chen腐蚀剂在HgCdTe外延材料(111)B面腐蚀坑特性的研究，揭示了HgCdTe液相外延材料中的缺陷特征及其密度分布规律。

With iron carbide, we have grown diamond layers on the surface of diamond and cBN seeds. The iron carbide not only nucleated and formed diamond crystal, but also grown diamond layers on different substrate under HPHT.

以铁碳化合物为原料在金刚石和立方氮化硼籽晶表面外延金刚石的实验表明，铁碳化合物不但可以在高温高压下成核形成金刚石颗粒，而且可以在同质或者异质基底上外延生长金刚石层。

High bright blue LED wafers were obtained by optimizing the nitrides growth technology and wafer structure.

通过设计并优化外延片多层结构，生长的蓝光LED外延片质量达到了目前国际上商品化的中高档水平。

The results show that the epitaxial island critical size which determinates growth model exists in the process of Ti growing on Fe(001) surface, the atoms on the edge of island decrease system energy through upward transportation while epitaxial island size is above the critical value.

结果表明：Ti在Fe(001)表面外延生长时存在生长模式转变的临界尺寸，临界尺寸以上，外延岛边缘原子通过向上迁移运动来降低体系能量。

It has been put forward that there exists single Ball point and double Ball points on the symmetrical connecting-rod curves of equilateral mechanisms.

从鲍尔点的形成原理出发，分析对称连杆曲线上鲍尔点的产生条件，提出等边机构的对称连杆曲线上有单鲍尔点和双鲍尔点。

The factory affiliated to the Group primarily manufactures multiple-purpose pincers, baking kits, knives, scissors, kitchenware, gardening tools and beauty care kits as well as other hardware tools, the annual production value of which reaches US$ 30 million dollars.

集团所属工厂主要生产多用钳、烤具、刀具、剪刀、厨具、花园工具、美容套等五金产品，年生产总值3000万美元，产品价廉物美、选料上乘、质量保证，深受国内外客户的青睐